High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD75-ST, -SMA, -FC, -SC The 13PD75-ST, an InGaAs photodiode with a 75m-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high speed and low noise applications. Planar semiconductor design and dielectric passivation provide superior low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200C, 15 hours, Vr = 20V). The ST receptacle is suitable for bulkhead and PC Board mounting. Features: * Planar Structure * Dielectric Passivation * 100% Purge Burn-in * High Responsivity DEVICE CHARACTERISTICS Parameters Test Conditions Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response -5V -5V 1300nm Minimum 0.65 Typical 0.2 0.7 0.8 Maximum Units -20 2 0.9 Volts nA pF A/W ns GHz 0.5 (-3dB) 1.5 ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 30 Volts 5mA 5mA -40C to +85C -40C to +85C 250C Sheet 1 of 1 829 Flynn Road, Camarillo, CA 93012 * Phone: (805) 445-4500 * Fax: (805) 445-4502 Email: customerservice@telcomdevices.com * Website: www.telcomdevices.com