Silicon RF Power Semiconductors
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 17 Aug 2010
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING
0.2+/-0.05
0.2+/-0.05
0.9+/-0.1
INDEX MARK
(Gate)
6.0+/-0.15
4.9+/-0.15
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1.0+/-0.05
(0.25)
2
3
1
3.5+/-0.05
2.0+/-0.05
(0.25)
(0.22) (0.22)
DESCRIPTION
RD12MVS1 is a MOS FET type transistor 
specifically designed for VHF RF power 
amplifiers applications.
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in 
VHF band mobile radio sets.
RoHS COMPLIANT
RD12MVS1-101,T112is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to Source Voltage VGS=0V 50 V
VGSS Gate to Source Voltage VDS=0V +/- 20 V
ID Drain Current 4 A
Pin Input Power Zg=Zl=50Ω 2 W
Pch Channel Dissipation Tc=25°C 50 W
Tj Junction Temperature 150
°C
Tstg Storage Temperature -40 to +125 °C
Rthj-c Thermal Resistance Junction to Case 2.5 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to Source Leak Current VGS=10V, VDS=0V - - 1 uA
VTH Gate Threshold Voltage VDS=12V, IDS=1mA 1.8 - 4.4 V
Pout Output Power 11.5 12 - W
ηD Drain Efficiency
f=175MHz,VDD=7.2V
Pin=1.0W,Idq=1.0A 55 57 - %
Load VSWR tolerance
VDD=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Not destroy -
Note: Above parameters, ratings, limits and conditions are subject to change.
Silicon RF Power Semiconductors
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 17 Aug 2010
2/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION V S.
AMBIENT TEMPERATURE
0
10
20
30
40
50
60
0 40 80 120 160 200
A MBIENT TEMPERA TURE Ta( °C)
CHANNEL DISSIPATION Pch(W
)
...
On PCB(*1)
with throgh hole
and Heat- sink
On PCB(*1) with Heat-sink
*1:The material of the PC B
Glass epoxy (t=0.6 mm)
Vds VS. Crss CHARACTERISTICS
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
20
40
60
80
100
120
140
160
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
0246810
Vds(V)
Ids(A)
Ta=+25°C
Vg s=7.5V
Vg s=5.5V
Vg s=4.5V
Vg s=5.0V
Vg s=6.0V
Vg s=4.0V
Vg s=3.5V
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
01234567
Vgs(V)
Ids(A),GM(S)
Ta=+25°C
Vds=10V
Ids
GM
Silicon RF Power Semiconductors
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 17 Aug 2010
3/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
0
10
20
30
40
-5 0 5 10 15 20 25 30
Pin(dBm)
Po(dBm) , Gp(dB) , Idd(A)
0
20
40
60
80
ηd(%)
Ta= +25°C
f= 175M Hz
Vdd= 7.2V
Idq = 1.0A
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS @f=175MHz
0
2
4
6
8
10
12
14
0 200 400 600 800 1000
Pin ( mW )
Pout(W) , Idd(A)
20
30
40
50
60
70
80
90
ηd(%)
Po
ηd
Idd
Ta= 25°C
f= 175M H z
Vdd= 7.2V
Idq = 1.0A
Vdd-Po CHARACTERISTICS @f=175M Hz
0
5
10
15
20
25
4681012
Vdd(V)
Po(W)
0
1
2
3
4
5
Idd(A)
Po
Idd
Ta= 25°C
f= 175M H z
Pin= 0.3W
Icq = 700mA
Zg = ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2
0
2
4
6
8
02468
Vgs(V)
Ids(A),GM(S)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
Silicon RF Power Semiconductors
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 17 Aug 2010
4/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT (f=175MHz)
24pF
WW
RD12MVS1
330pF
RF-in
47pF
Vdd
Vgg
25mm
4.7kΩ
15pF
5.0mm
35mm 3mm
C2
C1
L2
43.7nH
RF-out
12mm 68pF
L:Enameledwire
L1:4Turns,D:0.43mm,φ1.66mm(outsidediameter)
L2:6Turns,D:0.43mm,φ2.46mm(outsidediameter)
C1,C2:1000pF
C3:10uF,50V
Note:Boardmaterial-Teflonsubstrate
Microstriplinewidth=2.2mm/50,εr:2.7,t=0.8mm
W:linewidth=1.0mm
   Chip Condencer:GRM40
Contact
3.5mm 6.0mm
Copper board spring t=0.1mm
Contact
3.5mm
100pF
C3
33pF
330pF
L1
10.8nH
4mm 20mm
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
f=175MHz Zin*
f=175MHz Zout*
Silicon RF Power Semiconductors
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 17 Aug 2010
5/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
25 0.824 -159.3 26.397 93.4 0.018 -3.3 0.761 -160.3
50 0.816 -169.0 13.193 85.2 0.016 1.4 0.765 -168.1
75 0.817 -171.7 8.716 79.3 0.016 -10.9 0.778 -170.7
100 0.829 -172.8 6.537 74.5 0.016 -14.1 0.787 -170.3
125 0.837 -173.4 5.110 68.5 0.016 -18.2 0.800 -171.7
150 0.845 -173.9 4.117 64.2 0.015 -18.3 0.796 -172.3
175 0.852 -174.0 3.402 60.8 0.016 -15.1 0.810 -172.3
200 0.860 -174.3 2.896 57.2 0.012 -30.4 0.836 -172.2
225 0.870 -175.0 2.525 53.2 0.014 -29.9 0.858 -172.2
250 0.876 -175.0 2.175 48.9 0.013 -24.5 0.855 -173.0
275 0.886 -175.6 1.897 46.5 0.012 -39.4 0.859 -173.3
300 0.891 -175.8 1.675 43.6 0.012 -53.1 0.860 -173.4
325 0.902 -175.9 1.496 41.0 0.014 -32.9 0.886 -174.5
350 0.903 -176.2 1.348 38.3 0.012 -32.2 0.898 -174.6
375 0.909 -176.7 1.208 35.7 0.009 -29.2 0.898 -175.0
400 0.907 -177.6 1.087 33.7 0.009 -21.6 0.893 -175.6
425 0.912 -177.9 0.996 31.6 0.009 -32.5 0.903 -175.7
450 0.923 -178.3 0.912 29.7 0.004 -37.2 0.910 -176.6
475 0.928 -178.5 0.836 27.9 0.008 -25.9 0.917 -176.8
500 0.934 -178.6 0.748 25.8 0.007 -21.3 0.925 -177.3
525 0.932 -178.8 0.707 23.6 0.005 -46.6 0.922 -177.6
550 0.936 -179.2 0.647 23.2 0.006 -25.0 0.922 -177.6
575 0.932 179.6 0.591 20.8 0.004 -40.9 0.939 -178.0
600 0.935 179.1 0.562 20.0 0.003 -33.6 0.939 -178.9
625 0.939 179.2 0.520 17.4 0.003 17.7 0.938 -179.3
650 0.939 179.4 0.485 15.5 0.003 25.4 0.930 -179.5
675 0.943 179.1 0.460 15.6 0.003 51.4 0.932 -179.9
700 0.945 178.7 0.435 15.5 0.002 5.7 0.946 -179.9
725 0.943 177.5 0.407 13.3 0.004 5.6 0.949 179.3
750 0.939 177.2 0.380 12.2 0.001 -16.1 0.940 179.0
775 0.943 176.9 0.358 10.8 0.004 58.8 0.935 178.8
800 0.948 176.8 0.327 8.6 0.002 -6.7 0.943 178.2
825 0.951 177.1 0.308 8.0 0.003 40.4 0.945 177.5
850 0.953 176.7 0.314 8.5 0.003 77.0 0.948 176.8
875 0.952 176.1 0.284 7.0 0.006 46.5 0.946 176.7
900 0.954 175.4 0.269 9.7 0.003 64.5 0.950 176.7
925 0.944 174.4 0.254 6.7 0.007 60.3 0.946 176.0
950 0.951 174.6 0.250 6.0 0.006 69.7 0.952 175.7
975 0.954 175.0 0.232 1.9 0.003 80.3 0.959 175.0
1000 0.955 175.0 0.227 7.8 0.003 86.7 0.950 174.8
S11 S21 S12 S22
Silicon RF Power Semiconductors
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 17 Aug 2010
6/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice tha
t
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to aris
e
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notic
e
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products ar
e
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters fo
r
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact t
o
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefor
e
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case o
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to th
e
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the las
t
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Silicon RF Power Semiconductors
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 17 Aug 2010
7/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Keep safety first in your circuit designs !
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