MJE13009G-T3P-T - Unisonic Technologies Co., Ltd.

UNISONIC TECHNOLOGIES CO., LTD

MJE13009

NPN SILICON TRANSISTOR

www.unisonic.com.tw 1 of 9

SWITCHMODE SERIES NPN

SILICON POWER

TRANSISTORS

 DESCRIPTION

The MJE13009 is designed for high-voltage, high-speed power

switching inductive circuits where fall time is critical. They are

particularly suited for 115 and 220V switch mode applications such

as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay

drivers and Deflection circuits.

 FEATURES

* VCEO 400V and 300 V

* Reverse Bias SOA with Inductive Loads @ TC = 100℃

* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100℃

tC @ 8 A, 100 is 120 ns (Typ).℃

* 700 V Blocking Capability

* SOA and Switching Applications Information.

 ORDERING INFORMATION

Ordering Number Package Pin Assignment Packing

Lead Free Halogen Free 1 2 3

MJE13009L-TA3-T MJE13009G-TA3-T TO-220

B C E Tube

MJE13009L-TF3-T MJE13009G-TF3-T TO-220F

B C E Tube

MJE13009L-T3P-T MJE13009G-T3P-T TO-3P B C E Tube

MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2 of 9

www.unisonic.com.tw QW-R203-024,F

 ABSOLUTE MAXIMUM RATINGS (TA = 25℃)

PARAMETER SYMBOL RATINGS UNIT

Collector-Emitter Voltage VCEO 400 V

Collector-Emitter Voltage (VBE=-1.5V) VCEV 700 V

Emitter Base Voltage VEBO 9 V

Collector Current Continuous IC 12

A

Peak (Note 3) ICM 24

Base Current Continuous IB 6

A

Peak (Note 3) IBM 12

Emitter Current Continuous IE 18

A

Peak (Note 3) IEM 36

Power Dissipation

TO-220

PD

2

W

TO-220F 0.7

TO-3P 80

Derate above 25℃

TO-220 16

mW/℃

TO-220F 5.6

TO-3P 640

Junction Temperature TJ +150

℃

Storage Temperature TSTG -40 ~ +150 ℃

Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%

 THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT

Junction to Ambient

TO-220

θJA

54

℃/W

TO-220F 62.5

TO-3P 21

Junction to Case

TO-220

θJC

4

℃/W

TO-220F 3.13

TO-3P 1.55

 ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS (Note)

Collector- Emitter Sustaining Voltage VCEO I

C = 10mA, IB = 0 400 V

Collector Cutoff Current

VCBO=Rated Value ICEV VBE(OFF) = 1.5VDC

VBE

(

OFF

)

= 1.5VDC, TC = 100℃

1

5 mA

Emitter Cutoff Current IEBO V

EB = 9VDC, IC = 0 1 mA

ON CHARACTERISTICS (Note)

DC Current Gain hFE1 IC = 5A, VCE = 5V 40

hFE 2 I

C = 8A, VCE = 5V 30

Current-Emitter Saturation Voltage VCE(SAT)

IC = 5A, IB = 1A 1 V

IC = 8A, IB = 1.6A 1.5 V

IC = 12A, IB = 3A 3 V

IC = 8A, IB = 1.6A, TC = 100℃ 2 V

Base-Emitter Saturation Voltage VBE(SAT)

IC = 5A, IB = 1A 1.2 V

IC = 8A, IB = 1.6A 1.6 V

IC = 8A, IB = 1.6A, TC = 100℃ 1.5 V

MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 3 of 9

www.unisonic.com.tw QW-R203-024,F

 ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

DYNAMIC CHARACTERISTICS

Transition frequency fT I

C = 500mA, VCE = 10V, f = 1MHz 4 MHz

Output Capacitance COB V

CB = 10V, IE = 0, f = 0.1MHz 180 pF

SWITCHING CHARACTERISTICS (Resistive Load, Table 1)

Delay Time tDLY VCC = 125Vdc, IC = 8A

IB1 = IB2 = 1.6A, tP = 25μs

Duty Cycle ≤1%

0.06 0.1 µs

Rise Time tR 0.45 1 µs

Storage Time tS 1.3 3 µs

Fall Time tF 0.2 0.7 µs

Inductive Load, Clamped (Table 1, Fig. 13)

Voltage Storage Time tS I

C=8A, VCLAMP=300V, IB1=1.6A

VBE(OFF) = 5V, TC = 100℃

0.92 2.3 µs

Crossover Time tC 0.12 0.7 µs

Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%

MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 4 of 9

www.unisonic.com.tw QW-R203-024,F

 TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

TEST CIRCUITS

0.02µF

Note:

PW and VCC Adjusted for Desired IC

RB Adjusted for Desired IB1

DUTY CYCLE ≤ 10%

tR, tF≤ 10 ns

270

47

1/2W

100

2N2905

MJE200

-VBE(OFF)

D.U.T.

IB

RB

IC

MJE210

2N2222

1N4933

33

+5V

33

1N4933

0.001µF

1k

68

+5V

1k

1N4933

5V

PW

L

VCC

MR826*

VCLAMP

*SELECTED FOR . 1 kV

5.1k

51

VCE

CIRCUIT VALUES

Coil Data:

Ferroxcube Core #6656 GAP for 200μH/20A V

CC = 20V

Full Bobbin (~16 Turns) #16 LCOIL = 200μH VCLAMP = 300VDC

VCC = 125V

RC = 15Ω

D1 = 1N5820 or Equiv.

RB = Ω

TEST WAVEFORMS

tR, tF < 10 ns

Duty Cycle = 1.0%

RB and RC adjusted

for desired IB and IC

+10V 25µs

0

-8V

MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 5 of 9

www.unisonic.com.tw QW-R203-024,F

 TABLE 2. APPLI CATIONS EXAMPLES OF SWITCHING CIRCUITS

CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS

SERIES SWITCHING

REGULATOR

VCC VOUT

2

11

TURN–OFF (REVERSE BIAS) SOA

1.5 V ≤VBE(OFF) ≤9.0 V

DUTY CYCLE ≤10%

TURN–ON (FORWARD BIAS) SOA

tON ≤10 ms

DUTY CYCLE ≤10%

PD= 4000 W

350V

700V

400V

VCC

COLLECTOR VOLTAGE

TURN–OFF

TURN–ON

TC= 100°C

12A

24A

+

VCC VOUT

N

RINGING CHOKE

INVERTER

TC= 100 C

12A

24A

VCC

+11 700V

400V

COLLECTOR VOLTAGE

350V

2

PD= 4000 W

TURN–ON (FORWARD BIAS) SOA

tON ≤10 ms

DUTY CYCLE ≤10%

TURN–OFF (REVERSE BIAS) SOA

1.5 V ≤VBE(off) ≤9.0 V

DUTY CYCLE ≤10%

TURN–ON

TURN–OFF

VCC+N(VOUT)

t

IC

VCE

VCC

+

N(VO)

tON

tOFF

LEAKAGE SPIKE

t

VCC

VOUT

PUSH–PULL

INVERTER/CONVERTER

MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 6 of 9

www.unisonic.com.tw QW-R203-024,F

 TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE

IC(A) TC(℃) tSV(ns) tRV(ns) tFI(ns) tTI(ns) tC(ns)

3 25

100

770

1000

100

230

150

160

200

240

320

5 25

100

630

820

72

100

26

55

10

30

100

180

8 25

100

720

920

55

70

27

50

2

8

77

120

12 25

100

640

800

20

32

17

24

2

4

41

54

 SWITCHING TIME NOTES

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and

voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE

power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate

measurements must be made on each waveform to determine the total switching time. For this reason, the following

new terms have been defined.

tSV = Voltage Storage Time, 90% IB1 to 10% VCEM

tRV = Voltage Rise Time, 10–90% VCEM

tFI = Current Fall Time, 90–10% ICM

tTI = Current Tail, 10–2% ICM

tC = Crossover Time, 10% VCEM to 10% ICM

An enlarged portion of the turn–off waveforms is shown in Fig. 13 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during storage time and the predominant switching power losses

occur during the crossover interval and can be obtained using the standard equation from AN–222:

PSWT = 1/2 VCCIC(tC) f

Typical inductive switching waveforms are shown in Fig. 14. In general, tRV + tFI ≈ t

C. However, at lower test

currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25 and has become a ℃

benchmark for designers. However, for designers of high frequency converter circuits, the user oriented

specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which

are guaranteed at 100 .℃

MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 7 of 9

www.unisonic.com.tw QW-R203-024,F

 TYPICAL CHARATERISTICS

Collector Current, IC(A)

Collector, IC(A)

160

Fig. 3 Forward Bias Power Derating

0

0.6

Power Derating Factor

Case Temperature, TC(°C)

14020 40 100

0.4

80

0.8

Thermal

Derating

Second Breakdown

Derating

60 120

1

0.2

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.

Safe operating area curves indicate IC-V

CE limits of the transistor

that must be observed for reliable operation; i.e., the transistor

must not be subjected to greater dissipation than the curves

indicate.

The data of Fig. 1 is based on TC=25°C; TJ(PK) is variable

depending on power level. Second breakdown pulse limits are

valid for duty cycles to 10% but must be derated when TC≥ 25°C.

Second breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on Fig. 1 may

be found at any case temperature by using the appropriate curve

on Fig. 3.

TJ(PK) may be calculated from the data in Fig. 4. At high

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed

by second breakdown. Use of reverse biased safe operating

area data (Fig. 2) is discussed in the applications information

section.

2

Fig. 4 Typical Thermal Response [ZθJC(t)]

0.01

0.2

Transient Thermal Resistance

(Normalized), r(t)

Time, t (ms)

1

0.05

0.3

0.01 0.02 0.2

0.7

0.07

0.1

0.5

0.1

D = 0.5

0.05

0.05 50.5

1

0.03

0.02

0.1

0.2

10 20 50 100 200 500 1.0k

Single Pulse

0.02

0.01

t2

t1

Duty Cycle, D = t1/t2

P(PK)

ZθJC(t) = r(t) θJC

θJC = 1.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(PK) – TC= P(PK) ZθJC(t)

MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 8 of 9

www.unisonic.com.tw QW-R203-024,F

 TYPICAL CHARACTERISTICS (Cont.)

DC Current Gain, hFE

Collector-Emitter Voltage, VCE (V)

+0.6

Fig. 9 Collector Cutoff Region

0.1

100

Collector Current, IC(mA)

Base–Emitter Voltage, VBE (V)

1k

-0.4 -0.2 +0.2

10

0+0.4

10k

1

500

Fig. 10 Capacitance

40

600

Capacitance, C (pF)

200

1k

0.1 0.2

400

5

2k

2205010

4k

80

TJ= 150°C

1000.5

Reverse Voltage, VR(V)

25°C

VCE = 250V

125°C

100°C

50°C

75°C

FORWARDREVERSE

1

800

100

60

CIB

TJ= 25°C

COB

MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 9 of 9

www.unisonic.com.tw QW-R203-024,F

■ RESISTIVE SWITCHING PERFORMANCE

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.