BAS116T - NXP - Datasheet.Live

1. Product profile

1.1 General description

Single low leakage current switching diode, encapsulated in an ultra small

SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

[1] Pulse test: tp300 s; 0.02.

[2] When switched from IF= 10 mA to IR=10mA; R

L= 100 ; measured at IR=1mA.

2. Pinning information

BAS116T

Single low leakage current switching diode

Rev. 2 — 9 July 2012 Product data sheet

SOT416

High switching speed: trr =0.8sLow capacitance: Cd=2pF

Low leakage current: 3 pA Reverse voltage: VR75 V

Repetitive peak reverse voltage:

VRRM 85 V

Ultra small SMD plastic package

AEC-Q101 qualified

Low leakage current applications Voltage clamping

General-purpose switching Reverse polarity protection

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IFforward current [1] --215mA

IRreverse current VR=75V - - 5 nA

VRreverse voltage - - 75 V

trr reverse recovery time [2] --3s

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 anode

2 not connected

3 cathode

006aaa764

Product data sheet Rev. 2 — 9 July 2012 2 of 10

NXP Semiconductors BAS116T

Single low leakage current switching diode

3. Ordering information

4. Marking

5. Limiting values

[1] Pulse test: tp300 s; 0.02.

[2] Tj=25C before surge.

[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 3. Ordering information

Type number Package

Name Description Version

BAS116T SC-75 plastic surface-mounted package; 3 leads SOT416

Table 4. Marking codes

Type number Marking code

BAS116T ZY

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse

voltage -85V

VRreverse voltage - 75 V

IFforward current [1] -215mA

IFRM repetitive peak forward

current -500mA

IFSM non-repetitive peak

forward current square wave [2]

tp=1s-4A

tp=1ms - 1 A

tp=1s - 0.5 A

Ptot total power dissipation Tamb 25 C[3] -150mW

Tjjunction temperature - 150 C

Tamb ambient temperature 55 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 2 — 9 July 2012 3 of 10

NXP Semiconductors BAS116T

Single low leakage current switching diode

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Soldering point of cathode tab.

7. Characteristics

[1] Pulse test: tp300 s; 0.02.

[2] When switched from IF= 10 mA to IR=10mA; R

L= 100 ; measured at IR=1mA.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 833 K/W

Rth(j-sp) thermal resistance from

junction to solder point [2] - - 350 K/W

Table 7. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage [1]

IF=1mA --0.9V

IF=10mA --1 V

IF=50mA --1.1V

IF=150mA --1.25V

IRreverse current VR= 75 V - 0.003 5 nA

VR=75V; T

j= 150 C-380nA

trr reverse recovery

time [2] -0.83 s

Cddiode capacitance VR=0V; f=1MHz - 2 - pF

Product data sheet Rev. 2 — 9 July 2012 4 of 10

NXP Semiconductors BAS116T

Single low leakage current switching diode

FR4 PCB, standard footprint (1) Tamb = 150 C; typical values

(2) Tamb =25C; typical values

(3) Tamb =25C; maximum values

Fig 1. Forward current as a function of ambient

temperature; derating curve Fig 2. Forward current as a function of forward

voltage

Based on square wave currents.

Tj=25C before surge

Fig 3. No n-repetitive peak forward cu rrent as a function of pulse duration; maximum values

mlb755

0 200100 Tamb (°C)

300

100

200

(mA)

mlb752

300

100

200

(mA)

0 1.60.8 1.20.4 VF (V)

(1) (2) (3)

mbg704

102

IFSM

(A)

10−1

tp (μs)

110

103

10 102

Product data sheet Rev. 2 — 9 July 2012 5 of 10

NXP Semiconductors BAS116T

Single low leakage current switching diode

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

VR=75V

(1) Maximum values

(2) Typical values

f=1MHz; T

amb =25C

Fig 4. Reverse current as a function of junction

temperature Fig 5. Diode capacitance as a function of reverse

voltage; typical values

102

150 200

500

mlb754

100

10−1

10−2

10−3

(nA)

Tj (°C)

(1)

(2)

mbg526

01020155 VR (V)

(pF)

(1) IR=1mA

Fig 6. Reverse recovery time test circuit and wavefor ms

trr

(1)

+ IFt

output signal

trtpt

10 %

90 %

input signal

V = VR + IF × RS

RS = 50

D.U.T.

Ri = 50

SAMPLING

OSCILLOSCOPE

mga881

Product data sheet Rev. 2 — 9 July 2012 6 of 10

NXP Semiconductors BAS116T

Single low leakage current switching diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Fig 7. Package outline SOT416 (SC-75)

04-11-04Dimensions in mm

0.95

0.60

1.8

1.4

1.75

1.45 0.9

0.7

0.25

0.10

0.30

0.15

30.45

0.15

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

BAS116T SOT416 4 mm pitch, 8 mm tape and reel -115 -135

Fig 8. Reflow soldering footprint SOT416 (SC-75)

solder lands

solder resist

occupied area

solder paste

sot416_fr

0.85

1.7

2.2

0.5

(3×)

0.6

(3×)

1.3

Dimensions in mm

Product data sheet Rev. 2 — 9 July 2012 7 of 10

NXP Semiconductors BAS116T

Single low leakage current switching diode

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAS116T v.2 20120709 Product data sheet - BAS116T v.1

Modifications: •Section 2 “Pinning informa tion”: corrected graphic symbol

•Section 8.1 “Quality information”: added

•Section 13 “Legal information”: updated

BAS116T v.1 20091214 Product data sheet - -

Product data sheet Rev. 2 — 9 July 2012 8 of 10

NXP Semiconductors BAS116T

Single low leakage current switching diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

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representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incident al,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whethe r or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless ot herwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in app lications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications an d ther efo re su ch inclusi on a nd/or use is at the cu stome r's own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or cu stomer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by custo mer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and product s using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third p arty

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specif ication for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 9 July 2012 9 of 10

NXP Semiconductors BAS116T

Single low leakage current switching diode

No offer to sell or license — Nothing in this document may be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BAS116T

Single low leakage current switching diode

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 9 July 2012

Document identifier: BAS116T

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

10 Packing information . . . . . . . . . . . . . . . . . . . . . 6

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10