C3M0120100K VDS 1000 V ID @ 25C Silicon Carbide Power MOSFET TM C3M MOSFET Technology 22 A RDS(on) 120 m N-Channel Enhancement Mode Features * * * * * * * Package C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits * * * * * Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Gate (Pin 4) Driver Source (Pin 3) Applications * * * * Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Power Source (Pin 2) Part Number Package Marking C3M0120100K TO 247-4 C3M0120100K Maximum Ratings (TC = 25 C unless otherwise specified) Symbol Parameter Unit Test Conditions 1000 V VGS = 0 V, ID = 100 A Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25C Fig. 19 ID ID(pulse) PD TJ , Tstg TL Continuous Drain Current 22 14 A VGS = 15 V, TC = 100C Pulsed Drain Current 50 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 83 W TC=25C, TJ = 150 C Fig. 20 -55 to +150 C 260 C Operating Junction and Storage Temperature Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0120100K Rev. 3 , 10-2020 1.6mm (0.063") from case for 10s Electrical Characteristics (TC = 25C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 1000 1.8 2.1 3.5 1.6 Unit Test Conditions V VGS = 0 V, ID = 100 A V VDS = VGS, ID = 3 mA V VDS = VGS, ID = 3 mA, TJ = 150C IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 1000 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 120 155 RDS(on) Drain-Source On-State Resistance 170 8.9 gfs Transconductance Ciss Input Capacitance 414 Coss Output Capacitance 48 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 10.6 EON Turn-On Switching Energy (Body Diode FWD) 120 EOFF Turn Off Switching Energy (Body Diode FWD) 22 td(on) Turn-On Delay Time 5 Rise Time 9 Turn-Off Delay Time 13 Fall Time 7 Internal Gate Resistance 13 tr td(off) tf RG(int) Qgs Gate to Source Charge 5 Qgd Gate to Drain Charge 9 Qg Total Gate Charge 22 VGS = 15 V, ID = 15 A m VGS = 15 V, ID = 15 A, TJ = 150C VDS= 20 V, IDS= 15 A S 7.1 Note VDS= 20 V, IDS= 15 A, TJ = 150C f = 1 MHz VAC = 25 mV J Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 600 V pF Fig. 11 Fig. 16 J VDS = 700 V, VGS = -4 V/15 V, ID = 15A, RG(ext) = 2.5, L= 158H, TJ = 150C Fig. 26 ns VDD = 700 V, VGS = -4 V/15 V ID = 15 A, RG(ext) = 2.5 , Timing relative to VDS Inductive load Fig. 27, 28 f = 1 MHz, VAC = 25 mV nC VDS = 700 V, VGS = -4 V/15 V ID = 15 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.8 V VGS = -4 V, ISD = 7.5 A 4.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 C Note Fig. 8, 9, 10 Continuous Diode Forward Current 15 A VGS = -4 V Note 1 Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 15 A, VR = 700 V dif/dt = 2400 A/s, TJ = 150 C Note 1 trr Reverse Recover time 17 ns Qrr Reverse Recovery Charge 191 nC Irrm Peak Reverse Recovery Current 18 A Thermal Characteristics Symbol 2 Parameter Max. RJC Thermal Resistance from Junction to Case 1.5 RJA Thermal Resistance From Junction to Ambient 40 C3M0120100K Rev. 3 , 10-2020 Unit C/W Test Conditions Note Fig. 21 Typical Performance 45 35 VGS = 11V 30 25 20 15 VGS = 9V 10 5 0.0 2.0 4.0 6.0 8.0 10.0 VGS = 11V 35 30 25 20 VGS = 9V 15 10 VGS = 7V 0 12.0 0.0 2.0 4.0 Drain-Source Voltage, VDS (V) VGS = 15V VGS = 13V 35 10.0 12.0 Conditions: IDS = 15 A VGS = 15 V tp < 200 s VGS = 11V 2.0 30 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 40 8.0 Figure 2. Output Characteristics TJ = 25 C 2.5 Conditions: Tj = 150 C tp = < 200 s 6.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 C 45 VGS = 13V 5 VGS = 7V 0 VGS = 15V Conditions: Tj = 25 C tp = < 200 s 40 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 40 45 VGS = 13V VGS = 15V Conditions: Tj = -55 C tp = < 200 s VGS = 9V 25 20 15 VGS = 7V 10 1.5 1.0 0.5 5 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 -50 -25 0 Drain-Source Voltage, VDS (V) Figure 3. Output Characteristics TJ = 150 C 250 300 250 175 Tj = 150 C 150 Tj = -55 C 125 Tj = 25 C 100 75 50 25 0 100 125 150 225 VGS = 11 V 200 175 VGS = 13 V 150 125 VGS = 15 V 100 75 50 25 0 5 10 15 20 25 30 35 Drain-Source Current, IDS (A) 40 Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 75 Conditions: IDS = 15 A tp < 200 s 275 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 200 50 Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 s 225 25 Junction Temperature, Tj (C) C3M0120100K Rev. 3 , 10-2020 45 50 0 -50 -25 0 25 50 75 Junction Temperature, Tj (C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 35 -7 -6 -5 -4 -3 -2 -1 0 VGS = -4 V 25 TJ = 150 C 20 TJ = 25 C TJ = -55 C 15 10 -10 VGS = -2 V -15 -20 -25 -30 5 0 -35 0 2 4 6 8 10 12 Conditions: Tj = -55C tp < 200 s 14 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -6 -5 -4 -3 -2 -1 0 Drain-Source Current, IDS (A) VGS = -4 V 0 -8 -7 -6 -5 VGS = 0 V -10 -15 VGS = -2 V -20 -25 -30 -5 -4 -3 -2 -1 Drain-Source Voltage VDS (V) VGS = 0 V 4.0 -20 -25 -30 -35 -40 -45 Drain-Source Voltage VDS (V) 16 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.0 1.5 1.0 0.5 50 75 Junction Temperature TJ (C) 100 125 Figure 11. Threshold Voltage vs. Temperature 4 C3M0120100K Rev. 3 , 10-2020 -45 Conditions: IDS = 15 A IGS = 18 mA VDS = 700 V TJ = 25 C 12 2.5 25 -40 Figure 10. Body Diode Characteristic at 150 C 3.0 0 0 -15 Conditions: Tj = 150C tp < 200 s Conditons VGS = VDS IDS = 3 mA 3.5 0 -10 VGS = -2 V Figure 9. Body Diode Characteristic at 25 C -25 -45 -5 VGS = -4 V -35 Conditions: Tj = 25C tp < 200 s -50 -40 Figure 8. Body Diode Characteristic at -55 C Drain-Source Current, IDS (A) -8 0.0 0 -5 VGS = 0 V Drain-Source Current, IDS (A) 30 Drain-Source Current, IDS (A) -8 Conditions: VDS = 20 V tp < 200 s 150 8 4 0 -4 0 4 8 12 16 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 20 24 Typical Performance -5 -4 -3 -2 -1 0 VGS = 0 V -5 VGS = 5 V Drain-Source Current, IDS (A) 0 -10 VGS = 10 V -15 -20 VGS = 15 V -25 -6 -4 -5 -3 -2 -1 0 VGS = 5 V -10 VGS = 10 V -20 VGS = 15 V -30 Conditions: Tj = -55 C tp < 200 s -30 Conditions: Tj = 25 C tp < 200 s -35 -40 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 C -6 -5 -4 -3 -2 -1 0 30 0 Drain-Source Current, IDS (A) -10 VGS = 5 V VGS = 10 V VGS = 15 V -20 Stored Energy, EOSS (J) 25 -30 Conditions: Tj = 150 C tp < 200 s 20 15 10 5 0 -40 Drain-Source Voltage VDS (V) 0 200 Figure 15. 3rd Quadrant Characteristic at 150 C 1000 600 800 1000 1200 10 Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz 1000 Ciss Capacitance (pF) Capacitance (pF) Coss 100 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss 100 Coss 10 Crss 0 50 100 Drain-Source Voltage, VDS (V) Crss 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 -40 Figure 14. 3rd Quadrant Characteristic at 25 C VGS = 0 V 1 0 VGS = 0 V Drain-Source Current, IDS (A) -6 C3M0120100K Rev. 3 , 10-2020 200 1 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Typical Performance 90 Conditions: TJ 150 C Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 25 20 15 10 5 0 -55 -30 -5 20 45 70 Case Temperature, TC (C) 95 120 0.5 0.3 0.1 0.05 100E-3 60 50 40 30 20 10 -55 -30 0.02 SinglePulse 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 10 s 0.10 Conditions: TC = 25 C D = 0, Parameter: tp 0.1 1 10 100 Drain-Source Voltage, VDS (V) 1000 Conditions: TJ = 25 C VDD = 700 V RG(ext) = 2.5 VGS = -4/+15 V FWD = C3M0120100K L = 158 H ETotal 200 60 EOff 40 ETotal 150 EOn 100 EOff 50 20 0 5 10 15 20 25 Drain to Source Current, IDS (A) 30 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 500V) 6 145 1.00 250 EOn 0 120 1 ms 1 Switching Loss (uJ) Switching Loss (uJ) 80 95 Figure 22. Safe Operating Area Conditions: TJ = 25 C VDD = 500 V RG(ext) = 2.5 VGS = -4/+15 V FWD = C3M0120100K L = 158 H 100 70 100 ms Figure 21. Transient Thermal Impedance (Junction - Case) 120 45 100 s 0.01 1E-6 20 Case Temperature, TC (C) Limited by RDS On 10.00 0.01 10E-3 -5 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Figure 19. Continuous Drain Current Derating vs. Case Temperature 1 70 0 145 Conditions: TJ 150 C 80 C3M0120100K Rev. 3 , 10-2020 35 0 0 5 10 15 20 25 Drain to Source Current, IDS (A) 30 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 700V) 35 Typical Performance 250 Switching Loss (uJ) 180 Conditions: TJ = 25 C VDD = 700 V IDS = 15 A VGS = -4/+15 V FWD = C3M0120100K L = 158 H 200 ETotal 140 EOn 150 100 EOff EOn 100 80 60 EOff 20 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 30 Conditions: TJ = 25 C VDD = 700 V IDS = 15 A VGS = -4/+15 V FWD = C3M0120100K 25 20 0 0 25 50 75 100 125 Junction Temperature, TJ (C) 150 td(off) tr 15 tf td(on) 10 5 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0120100K Rev. 3 , 10-2020 20 175 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Switching Times (ns) 120 ETotal 40 50 0 Conditions: IDS = 15 A VDD = 700 V RG(ext) = 2.5 VGS = -4/+15 V L = 158 H FWD = C3M0120100K 160 Switching Loss (uJ) 300 25 Figure 28. Switching Times Definition 200 Test Circuit Schematic RG L VDC Q1 VGS= - 4 V KS CDC Q2 RG D.U.T KS Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0120100K Rev. 3 , 10-2020 Package Dimensions Package TO-247-4L 9 C3M0120100K Rev. 3 , 10-2020 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. `N' IS THE NUMBER OF TERMINAL POSITIONS 10 C3M0120100K Rev. 3 , 10-2020 Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links * * * SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright (c) 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 11 C3M0120100K Rev. 3 , 10-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power