1C3M0120100K Rev. 3 , 10-2020
C3M0120100K
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode
Features
• C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
Benets
• Reduce switching losses and minimize gate ringing
• Higher system efciency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
Package
Part Number Package Marking
C3M0120100K TO 247-4 C3M0120100K
V
DS
1000 V
I
D
@
25˚C
22 A
R
DS(on)
120 mΩ
Maximum Ratings (TC = 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1000 V VGS = 0 V, ID = 100 μA
VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1
VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2
ID Continuous Drain Current
22
AVGS = 15 V, TC = 25˚C Fig. 19
14 VGS = 15 V, TC = 100˚C
ID(pulse) Pulsed Drain Current 50 A Pulse width tP limited by Tjmax Fig. 22
PDPower Dissipation 83 W TC=25˚C, TJ = 150 ˚C Fig. 20
TJ , Tstg Operating Junction and Storage Temperature -55 to
+150 ˚C
TLSolder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
Drain
(Pin 1, TAB)
Power
Source
(Pin 2)
Driver
Source
(Pin 3)
Gate
(Pin 4)
2C3M0120100K Rev. 3 , 10-2020
Electrical Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1000 V VGS = 0 V, ID = 100 μA
VGS(th) Gate Threshold Voltage 1.8 2.1 3.5 VVDS = VGS, ID = 3 mA Fig. 11
1.6 VVDS = VGS, ID = 3 mA, TJ = 150ºC
IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1000 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
RDS(on) Drain-Source On-State Resistance 120 155 mΩVGS = 15 V, ID = 15 A Fig. 4,
5, 6
170 VGS = 15 V, ID = 15 A, TJ = 150ºC
gfs Transconductance 8.9 SVDS= 20 V, IDS= 15 A Fig. 7
7.1 VDS= 20 V, IDS= 15 A, TJ = 150ºC
Ciss Input Capacitance 414
pF VGS = 0 V, VDS = 600 V
f = 1 MHz
VAC = 25 mV
Fig. 17,
18
Coss Output Capacitance 48
Crss Reverse Transfer Capacitance 3
Eoss Coss Stored Energy 10.6 μJ Fig. 16
EON Turn-On Switching Energy (Body Diode FWD) 120
μJ VDS = 700 V, VGS = -4 V/15 V, ID = 15A,
RG(ext) = 2.5Ω, L= 158μH, TJ = 150ºC Fig. 26
EOFF Turn Off Switching Energy (Body Diode FWD) 22
td(on) Turn-On Delay Time 5
ns
VDD = 700 V, VGS = -4 V/15 V
ID = 15 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Fig. 27,
28
trRise Time 9
td(off) Turn-Off Delay Time 13
tfFall Time 7
RG(int) Internal Gate Resistance 13 Ωf = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 5
nC
VDS = 700 V, VGS = -4 V/15 V
ID = 15 A
Per IEC60747-8-4 pg 21
Fig. 12
Qgd Gate to Drain Charge 9
QgTotal Gate Charge 22
Reverse Diode Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage
4.8 V VGS = -4 V, ISD = 7.5 A Fig. 8,
9, 10
4.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 °C
ISContinuous Diode Forward Current 15 A VGS = -4 V Note 1
IS, pulse Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note 1
trr Reverse Recover time 17 ns
VGS = -4 V, ISD = 15 A, VR = 700 V
dif/dt = 2400 A/µs, TJ = 150 °C Note 1
Qrr Reverse Recovery Charge 191 nC
Irrm Peak Reverse Recovery Current 18 A
Thermal Characteristics
Symbol Parameter Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 1.5 °C/W Fig. 21
RθJA Thermal Resistance From Junction to Ambient 40
3C3M0120100K Rev. 3 , 10-2020
Figure 2. Output Characteristics TJ = 25 ºC
Typical Performance
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 1. Output Characteristics TJ = -55 ºC
Figure 3.
Output Characteristics TJ = 150 ºC Figure 4. Normalized On-Resistance vs. Temperature
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
0
5
10
15
20
25
30
35
40
45
0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
j
= -55 °C
tp = < 200 µs
V
GS
= 7V
V
GS
= 15V V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
0
5
10
15
20
25
30
35
40
45
0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 7V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
V
GS
= 15V
0
5
10
15
20
25
30
35
40
45
0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
Tj= 150 °C
tp = < 200 µs
V
GS
= 7V
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 025 50 75 100 125 150
On Resistance, RDS On (P.U.)
Junction Temperature, Tj(°C)
I
DS
= 15 A
V
GS
= 15 V
0
25
50
75
100
125
150
175
200
225
250
0 5 10 15 20 25 30 35 40 45 50
On Resistance, RDS On (mOhms)
Drain-Source Current, IDS (A)
Conditions:
V
GS
= 15 V
t
p
< 200 µs
T
j
= 150 °C
T
j
= -55 °C
T
j
= 25 °C
0
25
50
75
100
125
150
175
200
225
250
275
300
-50 -25 025 50 75 100 125 150
On Resistance, R
DS On
(mOhms)
Junction Temperature, T
j
(°C)
Conditions:
IDS = 15 A
t
p
< 200 µs
VGS = 15 V
VGS = 13 V
VGS = 11 V
4C3M0120100K Rev. 3 , 10-2020
Typical Performance
Figure 8. Body Diode Characteristic at -55 ºC
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
0
5
10
15
20
25
30
35
0 2 4 6 8 10 12 14
Drain-Source Current, I
DS
(A)
Gate-Source Voltage, V
GS
(V)
Conditions:
V
DS
= 20 V
tp < 200 µs
T
J
= 25 °C
T
J
= -55 °C
T
J
= 150 °C
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= 25°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
T
j
= 150°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 025 50 75 100 125 150
Threshold Voltage, Vth (V)
Junction Temperature TJ(°C)
Conditons
V
GS
= V
DS
I
DS
= 3 mA
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= -55°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
-4
0
4
8
12
16
0 4 8 12 16 20 24
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Conditions:
IDS =
IGS = 18 mA
VDS =
TJ= 25 °C
15 A
700 V
5C3M0120100K Rev. 3 , 10-2020
Typical Performance
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
Figure 16. Output Capacitor Stored Energy
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
-40
-35
-30
-25
-20
-15
-10
-5
0
-6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
Tj= -55 °C
tp< 200 µs
VGS = 10 V
VGS = 5 V
VGS = 15 V
VGS = 0 V
-40
-30
-20
-10
0
-6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= 25 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
-40
-30
-20
-10
0
-6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
Tj= 150 °C
tp< 200 µs
VGS = 10 V
VGS = 5 V
VGS = 15 V
VGS = 0 V
1
10
100
1000
050 100 150 200
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
Ciss
Coss
Conditions:
TJ= 25 °C
VAC = 25 mV
f = 1 MHz
Crss
0
5
10
15
20
25
30
0200 400 600 800 1000 1200
Stored Energy, E
OSS
(µJ)
Drain to Source Voltage, V
DS
(V)
1
10
100
1000
0200 400 600 800 1000
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
rss
6C3M0120100K Rev. 3 , 10-2020
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Typical Performance
0
5
10
15
20
25
-55 -30 -5 20 45 70 95 120 145
Drain-Source Continous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 150 °C
0
10
20
30
40
50
60
70
80
90
-55 -30 -5 20 45 70 95 120 145
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 150 °C
Figure 22. Safe Operating Area
Figure 21. Transient Thermal Impedance
(Junction - Case)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 500V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 700V)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
0
20
40
60
80
100
120
0 5 10 15 20 25 30 35
Switching Loss (uJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
E
Total
Conditions:
T
J
=
V
DD
=
R
G(ext)
=
V
GS
=
FWD =
L =
25 °C
500 V
2.5 Ω
-4/+15 V
C3M0120100K
158 μH
0
50
100
150
200
250
0 5 10 15 20 25 30 35
Switching Loss (uJ)
Drain to Source Current, IDS (A)
E
Off
E
On
E
Total
Conditions:
T
J
=
V
DD
=
R
G(ext)
=
V
GS
=
FWD =
L =
25 °C
700 V
2.5 Ω
-4/+15 V
C3M0120100K
158 μH
0.01
0.10
1.00
10.00
0.1 110 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
1 ms
10 µs
Conditions:
T
C
= 25 °C
D = 0,
Parameter: t
p
100 ms
Limited by R
DS On
7C3M0120100K Rev. 3 , 10-2020
Typical Performance
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 27. Switching Times vs. RG(ext)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Figure 28. Switching Times Denition
0
50
100
150
200
250
300
0 5 10 15 20 25
Switching Loss (uJ)
External Gate Resistor RG(ext) (Ohms)
EOff
EOn
ETotal
Conditions:
TJ=
VDD =
IDS =
VGS =
FWD =
L =
25 °C
700 V
15 A
-4/+15 V
C3M0120100K
158 μH
0
20
40
60
80
100
120
140
160
180
025 50 75 100 125 150 175 200
Switching Loss (uJ)
Junction Temperature, T
J
(°C)
EOff
EOn
ETotal
Conditions:
IDS =
VDD =
RG(ext) =
VGS =
L =
FWD =
15 A
700 V
2.5 Ω
-4/+15 V
158 μH
C3M0120100K
0
5
10
15
20
25
30
0 5 10 15 20 25
Switching Times (ns)
External Gate Resistor RG(ext) (Ohms)
t
d(off)
Conditions:
T
J
=
V
DD
=
I
DS
=
V
GS
=
FWD = t
r
t
f
t
d(on)
25 °C
700 V
15 A
-4/+15 V
C3M0120100K
8C3M0120100K Rev. 3 , 10-2020
Test Circuit Schematic
L
Q
2
D.U.T
Q
1
VGS= - 4 V
R
G
R
G
C
DC
V
DC
KS
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
9C3M0120100K Rev. 3 , 10-2020
Package Dimensions
Package TO-247-4L
10 C3M0120100K Rev. 3 , 10-2020
Package Dimensions
Package TO-247-4L
NOTE ;
1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS
1111 C3M0120100K Rev. 3 , 10-2020
Copyright © 2020 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.wolfspeed.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems.
Notes
Related Links
• SPICE Models: http://wolfspeed.com/power/tools-and-support
• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support