STW4N150 - STMicroelectronics

July 2009 Doc ID 11262 Rev 9 1/15

STFW4N150

STP4N150, STW4N150

N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET

in TO-220, TO-247, TO-3PF

Features

■100% avalanche tested

■Intrinsic capacitances and Qg minimized

■High speed switching

■Fully isolated TO-3PF plastic packages

■Creepage distance path is 5.4 mm (typ.) for

TO-3PF

Application

■Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of very high voltage

Power MOSFETs with outstanding performances.

The strengthened layout coupled with the

company’s proprietary edge termination structure,

gives the lowest RDS(on) per area, unrivalled gate

charge and switching characteristics.

Figure 1. Internal schematic diagram.

Type VDSS RDS(on) max IDPw

STFW4N150 1500 V < 7 Ω4 A 63 W

STP4N150 1500 V < 7 Ω4 A 160 W

STW4N150 1500 V < 7 Ω4 A 160 W TO-220

TO-247

123

TO-3PF

!-V

$

'

3

Table 1. Device summary

Order codes Marking Package Packaging

STFW4N150 4N150 TO-3PF Tube

STP4N150 P4N150 TO-220 Tube

STW4N150 W4N150 TO-247 Tube

www.st.com

Contents STFW4N150, STP4N150, STW4N150

2/15 Doc ID 11262 Rev 9

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

STFW4N150, STP4N150, STW4N150 Electrical ratings

Doc ID 11262 Rev 9 3/15

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter

Value

Unit

TO-220 TO-247 TO-3PF

VDS Drain-source voltage (VGS = 0) 1500 V

VGS Gate- source voltage ± 30 V

Drain current (continuous) at

TC = 25 °C 444

(1) A

Drain current (continuous) at

TC = 100 °C 2.5 2.5 2.5 (1) A

IDM (1)

1. Pulse width limited by safe operating area

Drain current (pulsed) 12 12 12 (1) A

PTOT Total dissipation at TC = 25 °C 160 63 W

VISO

Insulation withstand voltage (RMS)

from all three leads to external heat

sink (t=1 s;TC=25 °C)

3500 V

Tstg Storage temperature -55 to 150 °C

TjMax. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter

Value

Unit

TO-220 TO-247 TO-3PF

Rthj-case

Thermal resistance junction-case

max 0.78 2 °C/W

Rthj-amb

Thermal resistance junction-

ambient max 62.5 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max) 4A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ

Electrical characteristics STFW4N150, STP4N150, STW4N150

4/15 Doc ID 11262 Rev 9

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source

Breakdown voltage ID = 1 mA, VGS = 0 1500 V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC = 125 °C

500

µA

IGSS

Gate-body leakage

current (VDS = 0) VGS = ± 30 V ± 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on

Static drain-source on

resistance VGS = 10 V, ID = 2 A 5 7 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1)

1. Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance VDS = 30 V, ID = 2 A - 3.5 S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 -

1300

120

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 750 V, ID = 2 A,

RG = 4.7 Ω, VGS = 10 V

Figure 19

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 600 V, ID = 4 A,

VGS = 10 V

Figure 20

50 nC

STFW4N150, STP4N150, STW4N150 Electrical characteristics

Doc ID 11262 Rev 9 5/15

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM(1)

1. Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed) -4

VSD(2)

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage ISD = 4 A, VGS = 0 - 2 V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A,

di/dt = 100 A/µs

VDD = 45 V

Figure 21

510

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A,

di/dt = 100 A/µs

VDD = 45 V, Tj = 150°C

Figure 21

615

12.6

µC

Electrical characteristics STFW4N150, STP4N150, STW4N150

6/15 Doc ID 11262 Rev 9

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220

Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF

Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

0.1

0.01

0.1 1100 VDS(V)

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C

Tc=25°C

Sinlge

pulse

1000

AM03935v1

-2

t(s)

-2

-1

0.2

0.05

0.02

0.01

0.1

Single pulse

δ=0.5

TO3PF

STFW4N150, STP4N150, STW4N150 Electrical characteristics

Doc ID 11262 Rev 9 7/15

Figure 8. Output characteristics Figure 9. Transfer characteristics

Figure 10. Transconductance Figure 11. Static drain-source on resistance

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations

Electrical characteristics STFW4N150, STP4N150, STW4N150

8/15 Doc ID 11262 Rev 9

Figure 14. Normalized gate threshold voltage

vs temperature

Figure 15. Normalized on resistance vs

temperature

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized BVDSS vs temperature

Figure 18. Maximum avalanche energy vs

temperature

STFW4N150, STP4N150, STW4N150 Test circuits

Doc ID 11262 Rev 9 9/15

3 Test circuits

Figure 19. Switching times test circuit for

resistive load

Figure 20. Gate charge test circuit

Figure 21. Test circuit for inductive load

switching and diode recovery times

Figure 22. Unclamped inductive load test

circuit

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

AM01468v1

VGS

D.U.T.

2200

µF

3.3

µFVDD

AM01469v1

VDD

47kΩ1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200

µF

IG=CONST

100Ω

100nF

D.U.T.

AM01470v1

D.U.T.

25 Ω

FAST

DIODE

L=100µH

µF

3.31000

µFVDD

AM01471v1

D.U.T.

2200

µF

3.3

µFVDD

AM01472v1

V(BR)DSS

VDD

IDM

AM01473v1

VDS

ton

tdon tdoff

toff

90%

10%

90%

10%

VGS

Package mechanical data STFW4N150, STP4N150, STW4N150

10/15 Doc ID 11262 Rev 9

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com. ECOPACK

is an ST trademark.

STFW4N150, STP4N150, STW4N150 Package mechanical data

Doc ID 11262 Rev 9 11/15

TO-220 mechanical data

Dim mm inch

Min Typ Max Min Typ Max

A 4.40 4.60 0.1730.181

b0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.480.70 0.0190.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.231.32 0.0480.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L1314 0.511 0.551

L1 3.50 3.93 0.137 0.154

L20 16.40 0.645

L3028.90 1.137

∅P3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

Package mechanical data STFW4N150, STP4N150, STW4N150

12/15 Doc ID 11262 Rev 9

Dim. mm.

Min. Typ Max.

A4.855.15

A1 2.20 2.60

b1.0 1.40

b1 2.0 2.40

b23.0 3.40

c0.40 0.80

D19.85 20.15

E 15.45 15.75

e5.45

L 14.20 14.80

L1 3.70 4.30

L2 18.50

øP 3.55 3.65

øR 4.50 5.50

S5.50

TO-247 Mechanical data

STFW4N150, STP4N150, STW4N150 Package mechanical data

Doc ID 11262 Rev 9 13/15

DIM. mm.

min. typ max.

A5.30 5.70

C2.803.20

D3.10 3.50

D1 1.80 2.20

E0.80 1.10

F 0.65 0.95

F2 1.80 2.20

G 10.30 11.50

G1 5.45

H 15.30 15.70

L9.80 10 10.20

L2 22.8023.20

L326.30 26.70

L4 43.20 44.40

L5 4.30 4.70

L6 24.30 24.70

L7 14.60 15

N1.80 2.20

R3.80 4.20

Dia3.40 3.80

TO-3PF mechanical data

7627132_C

Revision history STFW4N150, STP4N150, STW4N150

14/15 Doc ID 11262 Rev 9

5 Revision history

Table 8. Document revision history

Date Revision Changes

29-Mar-2005 1 Initial release

07-Jul-2005 2 Removed TO-220FP

07-Oct-2005 3 Document status promoted from preliminary data to datasheet

10-Aug-2006 4 Document reformatted, no content change

06-Nov-2007 5 Updated unit on Table 5: On/off states

09-Apr-2008 6 Added new packages: TO-220FH, TO-3PF

21-Jan-2009 7 Remove package TO-220FH

23-Feb-2009 8 Added PTOT value for TO-3PF PTOT (Table 2: Absolute

maximum ratings)

23-Jul-2009 9 Added new figures: Figure 4: Safe operating area for TO-3PF

and Figure 5: Thermal impedance for TO-3PF

STFW4N150, STP4N150, STW4N150

Doc ID 11262 Rev 9 15/15

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