Caution Electro-static sensitive devices
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
µµ
µ
PC8172TB
SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER
FOR WIRELESS TRANSCEIVER
Document No. P14729EJ2V0DS00 (2nd edition)
Date Published September 2000 N CP(K)
DATA SHEET
The mark shows major revised poi nts.
DESCRIPTION
The
µ
PC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless
transceiver transmitter stage.
This IC is as same circuit current as conventional
µ
PC8106TB, but operates at higher frequency, higher gain and
lower distortion. Consequently this IC is suitable for mobile communications.
FEATURES
• Recommended operating frequency : fRFout = 0.8 to 2.5 GHz
• Higher IP3: CG = 9.5 dB TYP., OIP3 = +7.5 dBm TYP. @ fRFout = 0.9 GHz
• High-density surface mounting : 6-pin super minimold package
• Supply voltage : VCC = 2.7 to 3.3 V
APPLICATIONS
• PCS1900M
• 2.4 GHz band transmitter/receiver system (wireless LAN etc.)
ORDERING INFORMATION
Part Number Package Marking Supplyi ng Form
µ
PC8172TB-E3 6-pi n super minimold C3A •Embossed tape 8 mm wide.
•Pin 1, 2, 3 face the tape perf oration side.
•Qty 3 kpcs/reel.
Remark To order evaluation samples, please contact your nearby sales office.
(Part number for sample order:
µ
PC8172TB-A)
PHASE-OUT
Data Sheet P14729EJ2V0DS00
2
µ
µµ
µ
PC8172TB
PIN CONNECTIONS
SERIES PRODUCTS (TA = +25°C, VCC = VRFout = 3.0 V, ZS = ZL = 50 Ω
ΩΩ
Ω)
CG (dB)
Part Number ICC
(mA) fRFout
(GHz) @RF 0.9 GHz Note @RF 1.9 GHz @RF 2.4 GHz
µ
PC8172TB 9 0.8 to 2.5 9.5 8.5 8.0
µ
PC8106TB 9 0.4 to 2.0 9 7 −
µ
PC8109TB 5 0.4 to.2.0 6 4 −
µ
PC8163TB 16.5 0.8 to 2.0 9 5.5 −
PO(sat) (dBm) OIP3 (dBm)
Part Number @RF 0.9 GHzNote @RF 1.9 GHz @RF 2.4 GHz @RF 0.9 GHzNote @RF 1.9 GHz @RF 2.4 GHz
µ
PC8172TB +0.5 0 −0.5 +7.5 +6.0 +4.0
µ
PC8106TB −2−4−+5.5 +2.0 −
µ
PC8109TB −5.5 −7.5 −+1.5 −1.0 −
µ
PC8163TB +0.5 −2−+9.5 +6.0 −
Note fRFout = 0.83 GHz @
µ
PC8163TB
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
To know the associated product, please refer to each latest data sheet.
BLOCK DIAGRAM (FOR THE
µ
µµ
µ
PC8172TB)
LOinput
GND
IFinput
PS
V
CC
RFoutput
(Top View)
3
2
1
4
5
6
(Top View)
C3A
4
5
6
3
2
1
(Bottom View)
Pin No. Pin Name
1 IFinput
2GND
3 LOinput
4PS
5V
CC
6 RFoutput
PHASE-OUT
Data Sheet P14729EJ2V0DS00 3
µ
µµ
µ
PC8172TB
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM)
Wireless Transceiver
PC8172TB
µ
DEMOD.
PLL
PA
SW
I
Q
VCO
0°
90°
Q
I
RX
TX
PLL
Low Noise Tr.
÷N
Phase
shifter
To know the associated products, please refer to each latest data sheet.
PHASE-OUT
Data Sheet P14729EJ2V0DS00
4
µ
µµ
µ
PC8172TB
CONTENTS
1. PIN EXPLANATION.......................................................................................................................... 5
2. ABSOLUTE MAXIMUM RATINGS.................................................................................................. 6
3. RECOMMENDED OPERATING CONDITIONS............................................................................... 6
4. ELECTRICAL CHARACTERISTICS ................................................................................................ 6
5. OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY...................................... 7
6. TEST CIRCUIT.................................................................................................................................. 8
6.1 TEST CIRCUIT 1 (fRFout = 900 MHz).................................................................................... 8
6.2 TEST CIRCUIT 2 (fRFout = 1.9 GHz)..................................................................................... 9
6.3 TEST CIRCUIT 3 (fRFout = 2.4 GHz)..................................................................................... 10
7. TYPICAL CHARACTERISTICS........................................................................................................ 12
8. PACKAGE DIMENSIONS................................................................................................................. 24
9. NOTE ON CORRECT USE............................................................................................................. 25
10. RECOMMENDED SOLDERING CONDITIONS............................................................................... 25
PHASE-OUT
Data Sheet P14729EJ2V0DS00 5
µ
µµ
µ
PC8172TB
1. PIN EXPLANATION
Pin
No. Pin
Name
Applied
Voltage
(V)
Pin
Voltage
(V)Note
Function and E xplanation Equival ent Ci rcuit
1 IFinput −1.4 This pin i s IF input t o doubl e bal -
anced mix er (DBM). The input i s
designed as hi gh i m pedance.
The circui t contributes to sup-
press s puri ous signal. A l so this
symm etrical ci rcuit can k eep
specified performance i nsensitiv e
to proces s -condition dis tribution.
For above reason, doubl e bal -
anced mix er i s adopted.
2GND GND −GND pin. Ground patt ern on the
board should be form ed as wide
as poss i bl e. Track Length shoul d
be kept as s hort as possi bl e to
minimi z e ground i mpedance.
3 LOinput −2.3 Local input pi n. Recommendable
input lev el i s −10 to 0 dBm.
5V
CC 2.7 to 3.3 −Supply v ol tage pin.
6 RFoutput Same
bias as
VCC
through
external
inductor
−This pin is RF output from DBM.
This pin is designed as open
collec tor. Due to the high i m ped-
ance output, this pin should be
externall y equipped with LC
matchi ng circuit t o next stage.
4PS V
CC/GND −Power save cont rol pi n. Bias
controls operation as fol l ows.
Note Each pin voltage is measured with VCC = VPS = VRFout = 3.0 V.
Pin bias Control
VCC Operation
GND Power Sav e
3
5
6
1
2
5
4
2
V
CC
GND
PHASE-OUT
Data Sheet P14729EJ2V0DS00
6
µ
µµ
µ
PC8172TB
2. ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Test Condit i ons Rating Unit
Supply V ol tage VCC TA = +25°C 3.6 V
PS pin I nput Voltage VPS TA = +25°C 3.6 V
Power Diss i pation of Pac k age PDMounted on double-side copperclad 50 × 50 × 1.6
mm epoxy gl ass PWB
(TA = +85°C)
270 mW
Operating Am bi ent Tem perature TA−40 to +85 °C
Storage Temperat ure Tstg −55 to +150 °C
Input Power Pin +10 dBm
3. RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Test Condit i ons MIN. TY P. MAX. Unit
Supply V ol tage VCC The same voltage should be appl i ed
to pin 5 and 6 2.7 3.0 3.3 V
Operating Am bi ent Tem perature TA−40 +25 +85 °C
Local Input Level PLOin ZS = 50 Ω (wit hout matching) −10 −50dBm
RF Output Frequency fRFout With external matching circuit 0.8 −2.5 GHz
IF Input Frequency fIFin 50 −400 MHz
4. ELECTRICAL CHARACTERISTICS
(TA = +25°C, VCC = VRFout = 3.0 V, fIFin = 240 MHz, PLOin = −
−−
−5 dBm, and VPS ≥
≥≥
≥ 2.7 V unless otherw ise specified)
Parameter Symbol Test ConditionsNote MIN. TYP. MAX. Unit
Circuit Current ICC No Signal 5.5 9.0 13 mA
Circuit Current In Power Save
Mode ICC(PS) VPS = 0 V −−2
µ
A
CG1 fRFout = 0.9 GHz, PIFin = −30 dBm 6.5 9.5 12.5 dB
CG2 fRFout = 1.9 GHz, PIFin = −30 dBm 5.5 8.5 11.5 dB
Conversion Gai n
CG3 fRFout = 2.4 GHz, PIFin = −30 dBm 5 8.0 11.0 dB
PO(sat)1f
RFout = 0.9 GHz, PIFin = 0 dBm −2.5 +0.5 −dBm
PO(sat)2f
RFout = 1.9 GHz, PIFin = 0 dBm −3.5 0 −dBm
Saturated RF Output Power
PO(sat)3f
RFout = 2.4 GHz, PIFin = 0 dBm −4−0.5 −dBm
Note fRFout < fLoin @ fRFout = 0.9 GHz
fLoin < fRFout @ fRFout = 1.9 GHz/2.4 GHz
PHASE-OUT
Data Sheet P14729EJ2V0DS00 7
µ
µµ
µ
PC8172TB
5. OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25°C, VCC = VRFout = 3.0 V, PLOin = −
−−
−5 dBm, and VPS ≥
≥≥
≥ 2.7 V unless otherwise specified)
Parameter Symbol Test Condit i onsNote Data Unit
OIP31f
RFout = 0.9 GHz +7.5 dBm
OIP32f
RFout = 1.9 GHz +6.0 dBm
Output Third-Order Distortion
Intercept Point
OIP33f
RFout = 2.4 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz +4.0 dBm
IIP31f
RFout = 0.9 GHz −2.0 dBm
IIP32f
RFout = 1.9 GHz −2.5 dBm
Input Third-Order Distortion
Intercept Point
IIP33f
RFout = 2.4 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz −4.0 dBm
SSB•NF1 fRFout = 0.9 GHz, f IFin = 240 MHz 9.5 dB
SSB•NF2 fRFout = 1.9 GHz, f IFin = 240 MHz 10.4 dB
SSB Noise Figure
SSB•NF3 fRFout = 2.4 GHz, f IFin = 240 MHz 10.6 dB
Rise time TPS(rise) VPS: GND → VCC 1
µ
sPower Save
Response Time Fall time TPS(fall) VPS: VCC → GND 1.5
µ
s
Note fRFout < fLOin @ fRFout = 0.9 GHz
fLOin < fRFout @ fRFout = 1.9 GHz/2.4 GHz
PHASE-OUT
Data Sheet P14729EJ2V0DS00
8
µ
µµ
µ
PC8172TB
6. TEST CIRCUIT
6.1 TEST CIRCUIT 1 (fRFout = 900 MHz)
Spectrum Analyzer
Strip Line
Signal Generator
Signal Generator
100 pF
100 pF
50 Ω
50 Ω
50 Ω1
2
34
5
6
10 nH
µ
100 pF 1 pF
1 000 pF
1 000 pF
V
CC
1 F
µ
1 F
68 pF
IFinput
GND
LOinput
RFoutput
V
CC
PS
C
3
C
8
C
5
C
7
C
6
C
4
C
1
C
2
L
EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD
C
1
C
2
C
6
C
3
C
8
C
5
C
7
C
4
L
V
CC
PS
Voltage Supply
PS bias
RFoutput
GND
LOinput
IFinput
PC8172TB
µ
COMPONENT LIST
Form Symbol Value
C1, C2, C3100 pF
C41 000 pF
C5, C61
µ
F
C768 pF
Chip capaci tor
C81 pF
Chip induct or L 10 nHNote
(∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
(∗2) Ground pattern on rear of the board
(∗3) Solder plated patterns
(∗4) : Through holes
Note 10 nH: LL1608-FH10N (TOKO Co., Ltd.)
PHASE-OUT
Data Sheet P14729EJ2V0DS00 9
µ
µµ
µ
PC8172TB
6.2 TEST CIRCUIT 2 (fRFout = 1.9 GHz)
Spectrum Analyzer
Strip Line
Signal Generator
Signal Generator
100 pF
100 pF
50 Ω
50 Ω
50 Ω1
2
34
5
6
470 nH
µ
100 pF
2.75 pF
1 000 pF
1 000 pF
V
CC
1 F
µ
1 F
30 pF
IFinput
GND
LOinput
RFoutput
V
CC
PS
C
3
C
8
C
5
C
7
C
6
C
4
C
1
C
2
L
EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD
C
1
C
2
C
6
C
3
C
5
C
7
C
4
C
8
L
V
CC
PS
Voltage Supply
PS bias
RFoutput
GND
LOinput
IFinput
PC8172TB
µ
COMPONENT LIST
Form Symbol Value
C1, C2, C3100 pF
C41 000 pF
C5, C61
µ
F
C730 pF
Chip capaci tor
C82.75 pF
Chip induct or L 470 nHNote
(∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
(∗2) Ground pattern on rear of the board
(∗3) Solder plated patterns
(∗4) : Through holes
Note 470 nH: LL2012-FR47 (TOKO Co., Ltd.)
PHASE-OUT
Data Sheet P14729EJ2V0DS00
10
µ
µµ
µ
PC8172TB
6.3 TEST CIRCUIT 3 (fRFout = 2.4 GHz)
Spectrum Analyzer
Strip Line
Signal Generator
Signal Generator
100 pF
100 pF
50 Ω
50 Ω
50 Ω470 nH
µ
100 pF
1.75 pF
1 000 pF
1 000 pF
V
CC
1 F
µ
1 F
10 pF
1
2
34
5
6IFinput
GND
LOinput
RFoutput
V
CC
PS
C
3
C
8
C
5
C
7
C
6
C
4
C
1
C
2
L
EXAMPLE OF TEST CIRCUIT 3 ASSEMBLED ON EVALUATION BOARD
C
1
C
2
C
6
C
3
C
5
C
7
C
4
C
8
L
V
CC
PS
Voltage Supply
PS bias
RFoutput
GND
LOinput
IFinput
PC8172TB
µ
COMPONENT LIST
Form Symbol Value
C1, C2, C3100 pF
C41 000 pF
C5, C61
µ
F
C710 pF
Chip capaci tor
C81.75 pF
Chip induct or L 470 nHNote
(∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
(∗2) Ground pattern on rear of the board
(∗3) Solder plated patterns
(∗4) : Through holes
Note 470 nH: LL2012-FR47 (TOKO Co., Ltd.)
PHASE-OUT
Data Sheet P14729EJ2V0DS00 11
µ
µµ
µ
PC8172TB
Caution The test circuits and board pattern on data sheet are for performance evaluation use only (They
are not recommended circuits). In the case of actual design-in, matching circuit should be de-
termined using S-parameter of desired frequency in accordance to actual mounting pattern.
PHASE-OUT
Data Sheet P14729EJ2V0DS00
12
µ
µµ
µ
PC8172TB
7. TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°
°°
°C, VCC = VRFout)
12
10
8
6
4
2
0
Circuit Current I
CC
(mA)
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
–40 –20 0 20 40 60 80
12
10
8
6
4
2
0
Circuit Current I
CC
(mA)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
01234
12
10
8
6
4
2
0
Circuit Current I
CC
(mA)
CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE
01234
PS PIN CONTROL RESPONSE TIME
Supply Voltage V
CC
(V) Operating Ambient Temperature T
A
(°C)
PS Pin Input Voltage V
PS
(V)
REF LVL = 0 dBm
ATT = 10 dB
10 dB/DIV (Vertical axis)
CENTER = 0.9 GHz
SPAN = 0 Hz
RBW = 3 MHz
VBW = 3 MHz
SWP = 50 sec
5 sec/DIV (Horizontal axis)
no signal
V
CC
= V
PS
V
CC
= 3.0 V
no signal
V
CC
= V
PS
T
A
= +85°C
V
CC
= 2.7 V
V
CC
= 3.3 V
V
CC
= 3.0 V
T
A
= +25°C
T
A
= –40°C
µ
µ
PHASE-OUT
Data Sheet P14729EJ2V0DS00 13
µ
µµ
µ
PC8172TB
S-PARAMETERS FOR EACH PORT (VCC = VPS = VRFout = 3.0 V)
(The parameters are monitored at DUT pins)
1
MARKER 1
1.15 GHz
MARKER 2
1.65 GHz
MARKER 3
2.15 GHz
S
11
Z
REF 1.0 Units
200.0 mUnits/
21.625 Ω –91.148 Ω
START 0.400000000 GHz
STOP 2.500000000 GHz
LO port
1
32
hp
1
MARKER 1
240.0 MHz
S
11
Z
REF 1.0 Units
200.0 mUnits/
332.63 Ω –601.34 Ω
START 0.100000000 GHz
STOP 1.000000000 GHz
IF port
1
hp
1
MARKER 1
900.0 MHz
MARKER 2
1.9 GHz
MARKER 3
2.5 GHz
S
22
Z
REF 1.0 Units
200.0 mUnits/
71.5 Ω –240.34 Ω
START 0.400000000 GHz
STOP 2.500000000 GHz
RF port (without matching)
1
32
hp
PHASE-OUT
Data Sheet P14729EJ2V0DS00
14
µ
µµ
µ
PC8172TB
S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) −
−−
−ON EVALUATION BOARD−
−−
−
(S22 data are monitored at RF connector on board)
1
MARKER 1
900.0 MHz
S
22
Z
REF 1.0 Units
200.0 mUnits/
55.615 Ω 2.2849 Ω
START 0.400000000 GHz
STOP 1.400000000 GHz
900 MHz (matched in test circuit 1)
1
1
hp
1
S
22
log MAG.
REF 0.0 dB
10.0 dB/
–24.754 dB
START 0.400000000 GHz
STOP 1.400000000 GHz
hp
1
MARKER 1
1.9 GHz
S
22
Z
REF 1.0 Units
200.0 mUnits/
38.584 Ω –2.2656 Ω
START 1.400000000 GHz
STOP 2.400000000 GHz
1.9 GHz (matched in test circuit 2)
1
hp
MARKER 1
900.0 MHz
C
D
1
1
S
22
log MAG.
REF 0.0 dB
10.0 dB/
–18.196 dB
START 1.400000000 GHz
STOP 2.400000000 GHz
hp
MARKER 1
1.9 GHz
C
D
C
D
C
D
1
PHASE-OUT
Data Sheet P14729EJ2V0DS00 15
µ
µµ
µ
PC8172TB
S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) −
−−
−ON EVALUATION BOARD−
−−
−
(S22 data are monitored at RF connector on board)
1
MARKER 1
2.4 GHz
S
22
Z
REF 1.0 Units
200.0 mUnits/
47.975 Ω –7.1113 Ω
START 1.900000000 GHz
STOP 2.900000000 GHz
2.4 GHz (matched in test circuit 3)
1
hp
1
1
S
22
log MAG.
REF 0.0 dB
10.0 dB/
–22.326 dB
START 1.900000000 GHz
STOP 2.900000000 GHz
hp
MARKER 1
2.4 GHz
C
D
1
C
D
PHASE-OUT
Data Sheet P14729EJ2V0DS00
16
µ
µµ
µ
PC8172TB
5
0
–5
–10
–15
–20
–25
RF Output Level P
RFout
(dBm)
RF OUTPUT LEVEL vs. IF INPUT LEVEL
–30 –25 –20 –15 –10 –5 0 5 10
–30 –25 –20 –15 –10 –5 0 5 10
15
10
5
0
–5
–10
–15
Conversion Gain CG (dB)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
–30 –25 –20 –15 –10 –5 0 5 10
5
0
–5
–10
–15
–20
–25
RF Output Level P
RFout
(dBm)
RF OUTPUT LEVEL vs. IF INPUT LEVEL
15
10
5
0
–5
–10
–15
Conversion Gain CG (dB)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
–30 –25 –20 –15 –10 –5 0 5 10
Local Input Level P
LOin
(dBm)
Local Input Level P
LOin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
T
A
= +85°CT
A
= +85°C
T
A
= +25°C
T
A
= +25°C
T
A
= –40°CT
A
= –40°C
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFout
= 900 MHz
f
LOin
= 1 140 MHz
P
IFin
= –30 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 900 MHz
f
LOin
= 1 140 MHz
P
IFin
= –30 dBm
V
CC
= V
PS
f
RFout
= 900 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 900 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
PHASE-OUT
Data Sheet P14729EJ2V0DS00 17
µ
µµ
µ
PC8172TB
5
0
–5
–10
–15
–20
–25
RF Output Level P
RFout
(dBm)
RF OUTPUT LEVEL vs. IF INPUT LEVEL
–30 –25 –20 –15 –10 –5 0 5 10–5 0 5 10
15
10
5
0
–5
–10
–15
Conversion Gain CG (dB)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
–30 –25 –20 –15 –10
–30 –25 –20 –15 –10 –5 0 5 10–5 0 5 10–30 –25 –20 –15 –10
5
0
–5
–10
–15
–20
–25
RF Output Level P
RFout
(dBm)
RF OUTPUT LEVEL vs. IF INPUT LEVEL
15
10
5
0
–5
–10
–15
Conversion Gain CG (dB)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
Local Input Level P
LOin
(dBm)
Local Input Level P
LOin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
T
A
= +25°C
T
A
= +85°C
T
A
= –40°C
T
A
= +25°C
T
A
= +85°C
T
A
= –40°C
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFout
= 1.9 GHz
f
LOin
= 1 660 MHz
P
IFin
= –30 dBm
V
CC
= V
PS
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFout
= 1.9 GHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
f
RFout
= 1.9 GHz
f
LOin
= 1 660 MHz
P
IFin
= –30 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 1.9 GHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
PHASE-OUT
Data Sheet P14729EJ2V0DS00
18
µ
µµ
µ
PC8172TB
5
0
–5
–10
–15
–20
–25
RF Output Level P
RFout
(dBm)
RF OUTPUT LEVEL vs. IF INPUT LEVEL
15
10
5
0
–5
–10
–15
Conversion Gain CG (dB)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
5
0
–5
–10
–15
–20
–25
RF Output Level P
RFout
(dBm)
RF OUTPUT LEVEL vs. IF INPUT LEVEL
15
10
5
0
–5
–10
–15
Conversion Gain CG (dB)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
Local Input Level P
LOin
(dBm)
Local Input Level P
LOin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFout
= 2.4 GHz
f
LOin
= 2 160 MHz
P
IFin
= –30 dBm
V
CC
= V
PS
f
RFout
= 2.4 GHz
f
LOin
= 2 160 MHz
P
IFin
= –30 dBm
V
CC
= V
PS
= 3.0 V
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFout
= 2.4 GHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
f
RFout
= 2.4 GHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
–5 0 5 10–30 –25 –20 –15 –10 –5 0 5 10–30 –25 –20 –15 –10
–5 0 5 10–30 –25 –20 –15 –10 –5 0 5 10–30 –25 –20 –15 –10
PHASE-OUT
Data Sheet P14729EJ2V0DS00 19
µ
µµ
µ
PC8172TB
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
T
A
= +25°C
V
CC
= V
PS
= 2.7 V
f
RFout
= 900 MHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
T
A
= –40°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 900 MHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 900 MHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 900 MHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.3 V
f
RFout
= 900 MHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
T
A
= +85°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 900 MHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
PHASE-OUT
Data Sheet P14729EJ2V0DS00
20
µ
µµ
µ
PC8172TB
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
T
A
= +25°C
V
CC
= V
PS
= 2.7 V
f
RFout
= 1.9 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
T
A
= –40°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 1.9 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 1.9 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 1.9 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.3 V
f
RFout
= 1.9 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
T
A
= +85°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 1.9 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
PHASE-OUT
Data Sheet P14729EJ2V0DS00 21
µ
µµ
µ
PC8172TB
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
–40
–50
–60
–70
–80
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Output Level of Each Tone P
RFout
(dBm)
IM
3
, RF OUTPUT LEVEL vs. IF INPUT LEVEL
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
IF Input Level P
IFin
(dBm)
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
T
A
= +25°C
V
CC
= V
PS
= 2.7 V
f
RFout
= 2.4 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
T
A
= –40°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 2.4 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 2.4 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 2.4 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
T
A
= +25°C
V
CC
= V
PS
= 3.3 V
f
RFout
= 2.4 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
T
A
= +85°C
V
CC
= V
PS
= 3.0 V
f
RFout
= 2.4 GHz
f
IFin
1 = 240 MHz
f
IFin
2 = 241 MHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
PHASE-OUT
Data Sheet P14729EJ2V0DS00
22
µ
µµ
µ
PC8172TB
0
–10
–20
–30
–40
–50
Local Leakage at IF Pin LO
if
(dBm)
LOCAL LEAKAGE AT IF PIN vs.
LOCAL INPUT FREQUENCY
0
–10
–20
–30
–40
–50
Local Leakage at IF Pin LO
if
(dBm)
LOCAL LEAKAGE AT IF PIN vs.
LOCAL INPUT FREQUENCY
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
0 100 200 300 400 500 0 100 200 300 400 500
0
–10
–20
–30
–40
–50
Local Leakage at RF Pin LO
rf
(dBm)
LOCAL LEAKAGE AT RF PIN vs.
LOCAL INPUT FREQUENCY
0
–10
–20
–30
–40
–50
Local Leakage at RF Pin LO
rf
(dBm)
LOCAL LEAKAGE AT RF PIN vs.
LOCAL INPUT FREQUENCY
0
–10
–20
–30
–40
–50
IF Leakage at RF Pin IF
rf
(dBm)
IF LEAKAGE AT RF PIN vs.
IF INPUT FREQUENCY
–50
–60
–70
–80
–90
–100
IF Leakage at RF Pin IF
rf
(dBm)
IF LEAKAGE AT RF PIN vs.
IF INPUT FREQUENCY
Local Input Frequency f
LOin
(GHz)
Local Input Frequency f
LOin
(GHz)
IF Input Frequency f
IFin
(MHz)
Local Input Frequency f
LOin
(GHz)
Local Input Frequency f
LOin
(GHz)
IF Input Frequency f
IFin
(MHz)
f
RFout
= 900 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 900 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 1.9 GHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 1.9 GHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 900 MHz
f
LOin
= 1 140 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 1.9 GHz
f
LOin
= 1 660 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
PHASE-OUT
Data Sheet P14729EJ2V0DS00 23
µ
µµ
µ
PC8172TB
0
–10
–20
–30
–40
–50
Local Leakage at RF Pin LO
rf
(dBm)
LOCAL LEAKAGE AT RF PIN vs.
LOCAL INPUT FREQUENCY
0
–10
–20
–30
–40
–50
Local Leakage at IF Pin LO
if
(dBm)
LOCAL LEAKAGE AT IF PIN vs.
LOCAL INPUT FREQUENCY
0 0.5 1 1.5 2 2.5 3
0 100 200 300 400 500
0 0.5 1 1.5 2 2.5 3
0
–10
–20
–30
–40
–50
IF Leakage at RF Pin IF
rf
(dBm)
IF LEAKAGE AT RF PIN vs.
IF INPUT FREQUENCY
Local Input Frequency f
LOin
(GHz)
IF Input Frequency f
IFin
(MHz)
Local Input Frequency f
LOin
(GHz)
f
RFout
= 2.4 GHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 2.4 GHz
f
LOin
= 2 160 MHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
f
RFout
= 2.4 GHz
P
LOin
= –5 dBm
V
CC
= V
PS
= 3.0 V
Remark The graphs indicate nominal characteristics.
PHASE-OUT
Data Sheet P14729EJ2V0DS00
24
µ
µµ
µ
PC8172TB
8. PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.7
0 to 0.1
0.15
+0.1
–0.05
2.0±0.2
1.3
0.650.65
0.2
+0.1
–0.05
2.1±0.1
1.25±0.1
0.1 MIN.
PHASE-OUT
Data Sheet P14729EJ2V0DS00 25
µ
µµ
µ
PC8172TB
9. NOTE ON CORRECT USE
(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
(3) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
(4) Connect a matching circuit to the RF output pin.
(5) The DC cut capacitor must be each attached to the input and output pins.
10. RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
Soldering Method Soldering Condit i ons Recommended Condition Symbol
Infrared Refl ow Package peak temperat ure: 235°C or below
Time: 30 s econds or less (at 210 °C)
Count: 3, Exposure lim i t: NoneNote
IR35-00-3
VPS Package peak temperature: 215°C or bel ow
Time: 40 s econds or less (at 200 °C)
Count: 3, Exposure lim i t: NoneNote
VP15-00-3
Wave Solderi ng Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure lim i t: NoneNote
WS60-00-1
Partial Heating Pin tem perat ure: 300°C
Time: 3 s econds or less (per side of devic e)
Exposure l i mit: NoneNote
−
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
PHASE-OUT
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
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Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modication, copy
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for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; ofce equipment; communications
equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and
industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); trafc control systems; anti-disaster systems; anti-crime
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threat to human life or bodily injury (articial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear
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for which the product is not intended by California Eastern Laboratories or Renesas Electronics.
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respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product
characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products
beyond such specied ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specic characteristics such as
the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
re in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy,
re control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of
microcomputer software alone is very difcult, please evaluate the safety of the nal products or systems manufactured by you.
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controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for
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Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.
12. Please contact a California Eastern Laboratories sales ofce if you have any questions regarding the information contained in this document or Renesas
Electronics products, or if you have any other inquiries.
NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
NOTE 3: Products and product information are subject to change without notice.
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