KSH122 / KSH122I — NPN Silicon Darlington Transistor
Publication Order Number:
KSH122/D
© 1999 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
KSH122 / KSH122I
NPN Silicon Darlington Transistor
Features
• D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I ” Suffix)
• Electrically Similar to Popular TIP122
• Complement to KSH127
Applications
• Switching Regulators
• Converters
• Power Amplifiers
Ordering Information
Part Number Top Mark Package Packing Method
KSH122TF KSH122 TO-252 3L (DPAK) Tape and Reel
KSH122TM KSH122 TO-252 3L (DPAK) Tape and Reel
KSH122ITU KSH122-I TO-251 3L (IPAK) Rail
Description
Designed for general-purpose power and switching, such
as output or driver stages in applications.
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
Equivalent Circu i t
B
E
C
R1 R2
R1 8k
R2 0.12k
KSH122 / KSH122I — NPN Silicon Darlington Transistor
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2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating co nd iti ons and stressing the parts to these levels i s not recommended. In add i-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 s, duty cycle 2%.
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 16 A
IB Base Current 120 mA
PC Collector Dissipation (TC=25C) 20.00 W
Collector Dissipation (TA=25C) 1.75
TJ Junction Temperature 150 C
TSTG Storage Temperature - 65 to 150 C
Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1) IC = 30 mA, IB = 0 100 V
ICEO Collector Cut-Off Current VCE = 50 V, IB =0 10 A
ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 10 A
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA
hFE DC Current Gain(1) VCE = 4 V, IC = 4 A 1000 12000
VCE = 4 V, IC = 8 A 100
VCE(sat) Collector-Emitter Saturation
Voltage(1) IC = 4 A, I B = 16 mA 2 V
IC = 8 A, IB = 80 mA 4
VBE(sat) Base-Emitter Saturation Voltage(1) IC = 8 A, IB = 80 mA 4.5 V
VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 4 A 2.8 V
Cob Output Capacitance VCB = 10 V, IE = 0, f = 0. 1 MHz 200 pF
KSH122 / KSH122I — NPN Silicon Darlington Transistor
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn-On Time
Figure 5. Turn-Off Time Figure 6. Safe Operating Area
0.1 1 10
100
1k
10k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
IC = 250 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10
0.01
0.1
1
10 VCC= 30V
IC=250IB
IB1=-IB2
tD, VBE(off)=0
tR
tR,tD[s], TURN ON TIME
IC[A], COLL ECTOR CUR R ENT
0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tF
tSTG
tSTG,tF[s], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
500
s
5ms
100
s
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
KSH122 / KSH122I — NPN Silicon Darlington Transistor
www.onsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Power Derating
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
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