A
Absolute Maximum Ratings T =25°C unless otherwise noted
Parameter Symbol Max Q1 Max Q2 Unit
s
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain
Current ATA=25°C ID
8.5 8.5 A
TA=70°C 6.6 6.6
Pulsed Drain Current BIDM 30 30
Power Dissipation TA=25°C PD22W
TA=70°C 1.28 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C
Parameter Symbol Maximum Schottky Units
Reverse Voltage VDS 30 V
Continuous Forward
Current ATA=25°C IF
3A
TA=70°C 2.2
Pulsed Diode Forward Current BIFM 20
Power Dissipation ATA=25°C PD2W
TA=70°C 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
AO4914A
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
Q1 Q2
VDS (V) = 30V VDS(V) = 30V
ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V)
RDS(ON) < 18mΩ <18mΩ (VGS = 10V)
RDS(ON) < 28mΩ <28mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
General Description
The AO4914A uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The tw
o
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard product AO4914A is Pb-free (meets ROHS &
Sony 259 specifications). AO4914AL is a Green Product
ordering option. AO4914A and AO4914AL are
electrically identical.
SOIC-8
G2
S2
G1
S1/A
D2
D2
D1/K
D1/K
1
2
3
4
8
7
6
5
G1
D1
S1
K
A G2
D2
S2
Q1 Q2
Alpha & Omega Semiconductor, Ltd.
AO4914A
Symbol Units
RθJL
Symbol Units
RθJL
RθJL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
74 110
Maximum Junction-to-Lead CSteady-State 35 40
Max
°C/W
°C/W
Parameter: Thermal Characteristics MOSFET Q2 Typ Max
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
48
40
Thermal Characteristics Schottky
62.5
40
48
74
62.5
°C/W
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead CSteady-State 35
Typ
Maximum Junction-to-Ambient
A
Steady-State
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
A
t ≤ 10s
47.5
RθJA
62.5Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
Maximum Junction-to-Ambient
A
Steady-State 110
110
Maximum Junction-to-Lead CSteady-State
71
32
A
: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev 0: Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4914A
Symbol Min Typ Max Units
BVDSS 30 V
0.005 0.05
3.2 10
12 20
IGSS 100 nA
VGS(th) 1 1.7 3 V
ID(ON) 30 A
14.8 18
TJ=125°C 20.5 25
20.6 28 m
Ω
gFS 23 S
VSD 0.46 0.6 V
IS3.5 A
Ciss 955 1250 pF
Coss 175 pF
Crss 112 pF
Rg0.5 0.85 Ω
Qg(10V) 17 23 nC
Qg(4.5V) 9 11.2 nC
Qgs 3.4 nC
Qgd 4.7 nC
tD(on) 5 6.5 ns
tr6 7.5 ns
tD(off) 19 25 ns
tf4.5 6 ns
trr Body Diode + Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/
µ
s20 24 ns
Qrr Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/
µ
s9.5 12 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge
VGS=10V, VDS=15V, ID=8.5A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
SWITCHING PARAMETERS
Gate resistance VGS=0V, VDS=0V, f=1MHz
Forward Transconductance VDS=5V, ID=8.5A
Diode+Schottky Forward Voltage IS=1A
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
Output Capacitance (FET + Schottky)
Reverse Transfer Capacitance
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8.5A mΩ
VGS=4.5V, ID=6A
Gate Threshold Voltage VDS=VGS ID=250µA
On state drain current VGS=10V, VDS=5V
mA
Gate-Body leakage current VDS=0V, VGS= ±20V
VR=30V, TJ=125°C
VR=30V, TJ=150°C
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
VR=30V
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
A
: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 0 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4914A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
10
20
30
40
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3V
3.5V
4.5V
10V
4V
0
5
10
15
20
25
30
35
1.5 2 2.5 3 3.5 4 4.5
VGS (Volts)
Figure 2: Transfer Characteristics
ID(A)
10
12
14
16
18
20
22
24
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note F)
IS (A)
125°C
FET+SCHOTTKY
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
Normalized On-Resistance
VGS=10V
VGS=4.5V
5
10
15
20
25
30
35
40
0246810
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
VDS=5V
VGS=4.5
V
VGS=10V
ID=8.5A
25°C
ID=8.5A
125°C
25°C
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO4914A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
0 5 10 15 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
Coss FET+SCHOTTKY
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Norm al i zed Transi ent
Thermal Resistance
Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (A)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
1
0
m
s
1ms
0
.1
s
1s
10s
D
C
RDS(ON)
limited
10µs
VDS=15V
ID=8.5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
f=1MHz
VGS=0V
TJ
(
Max
)
=150°C, T
A
=25°C
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
Power (W)
Alpha & Omega Semiconductor, Ltd.
AO4914A
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1 1.7 3 V
ID(ON) 30 A
14.8 18
TJ=125°C 22 27
20.6 28 m
Ω
gFS 23 S
VSD 0.75 1 V
IS3A
Ciss 955 1250 pF
Coss 145 pF
Crss 112 pF
Rg0.5 0.85 Ω
Qg(10V) 17 24 nC
Qg912nC
Qgs 3.4 nC
Qgd 4.7 nC
tD(on) 5 6.5 ns
tr6 7.5 ns
tD(off) 19 25 ns
tf4.5 6 ns
trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/
µ
s16.7 21 ns
Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/
µ
s6.7 10 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT
DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V µA
Gate-Body leakage current VDS=0V, VGS= ±20V
Gate Threshold Voltage VDS=VGS ID=250µA
On state drain current VGS=10V, VDS=5V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8.5A mΩ
VGS=4.5V, ID=6A
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
VGS=10V, VDS=15V, ID=8.5A
Total Gate Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
Forward Transconductance VDS=5V, ID=8.5A
Diode+Schottky Forward Voltage IS=1A
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 0 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4914A
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
13.4 16
22 26
0.76
0
5
10
15
20
25
30
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
24
28
32
1.5 2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
VGS=4.5V
10
20
30
40
50
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
V
GS
=4.5V
VGS=10V
ID=8.5A
25°C
125°C
ID=8.5A
10
12
14
16
18
20
22
24
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
VGS=4.5V
VGS=10V
Alpha & Omega Semiconductor, Ltd.
AO4914A
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
13.4 16
22 26
0.76
0
2
4
6
8
10
048121620
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
250
500
750
1000
1250
1500
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W )
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
VDS=15V
ID=8.5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
o
nT
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (A)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
10ms
1ms
0.1s
1
s
1
0s
D
C
RDS(ON)
limited
10µs
Alpha & Omega Semiconductor, Ltd.
