/TechnicalInformation IGBT- IGBT-modules F4-75R12KS4_B11 EconoPACKTM2IGBT"and SiCandPressFIT/ NTC EconoPACKTM2modulewiththefastIGBT2forhigh-frequencyswitchingandPressFIT/NTC /PreliminaryData VCES = 1200V IC nom = 75A / ICRM = 150A * and * UPS TypicalApplications * InductiveHeatingandWelding * UPSSystems * * ElectricalFeatures * High Short Circuit Capability, Self Limiting Short CircuitCurrent * LowSwitchingLosses * * * PressFIT * RoHS * MechanicalFeatures * IsolatedBasePlate * CopperBasePlate * PressFITContactTechnology * RoHScompliant * StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:NK dateofpublication:2013-11-05 approvedby:RS revision:2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 /TechnicalInformation IGBT- IGBT-modules IGBT- F4-75R12KS4_B11 PreliminaryData /IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1200 V DC ContinuousDCcollectorcurrent TC = 65C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 75 100 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 A Totalpowerdissipation TC = 25C, Tvj max = 150C Ptot 500 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V Gatethresholdvoltage IC = 3,00 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C VCE sat A A typ. max. 3,20 3,85 3,75 V V VGEth 4,5 5,5 6,5 V VGE = -15 V ... +15 V QG 0,80 C Internalgateresistor Tvj = 25C RGint 5,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 5,10 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,30 nF Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Turn-ondelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = 15 V RGon = 7,5 Tvj = 25C Tvj = 125C td on 0,12 0,13 s s Risetime,inductiveload IC = 75 A, VCE = 600 V VGE = 15 V RGon = 7,5 Tvj = 25C Tvj = 125C tr 0,05 0,06 s s Turn-offdelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = 15 V RGoff = 7,5 Tvj = 25C Tvj = 125C td off 0,31 0,36 s s Falltime,inductiveload IC = 75 A, VCE = 600 V VGE = 15 V RGoff = 7,5 Tvj = 25C Tvj = 125C tf 0,02 0,03 s s Turn-onenergylossperpulse IC = 75 A, VCE = 600 V, LS = 30 nH VGE = 15 V, di/dt = 2000 A/s RGon = 7,5 Tvj = 25C Tvj = 125C Eon 5,00 9,00 mJ mJ Turn-offenergylossperpulse IC = 75 A, VCE = 600 V, LS = 30 nH VGE = 15 V, du/dt = 7000 V/s RGoff = 7,5 Tvj = 25C Tvj = 125C Eoff 2,60 3,80 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,12 Temperatureunderswitchingconditions Tvj op -40 preparedby:NK dateofpublication:2013-11-05 approvedby:RS revision:2.0 2 tP 10 s, Tvj = 125C 450 A 0,25 K/W K/W 125 C /TechnicalInformation IGBT- IGBT-modules F4-75R12KS4_B11 PreliminaryData Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 75 A IFRM 150 A It 2450 As /CharacteristicValues min. typ. max. 2,00 1,70 2,55 Forwardvoltage IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V Tvj = 25C Tvj = 125C Peakreverserecoverycurrent IF = 75 A, - diF/dt = 2000 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C IRM 43,0 62,0 A A Recoveredcharge IF = 75 A, - diF/dt = 2000 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Qr 4,50 13,0 C C Reverserecoveryenergy IF = 75 A, - diF/dt = 2000 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Erec 1,70 4,70 mJ mJ VF V V Thermalresistance,junctiontocase /Diode/perdiode RthJC Thermalresistance,casetoheatsink /Diode/perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,26 Temperatureunderswitchingconditions Tvj op -40 125 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW 0,55 K/W K/W C NTC-/NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specificationaccordingtothevalidapplicationnote. preparedby:NK dateofpublication:2013-11-05 approvedby:RS revision:2.0 3 /TechnicalInformation IGBT- IGBT-modules F4-75R12KS4_B11 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Materialofmodulebaseplate Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 2,5 kV Cu Al203 -/terminaltoheatsink -/terminaltoterminal 10,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 7,5 mm Comperativetrackingindex CTI > 200 Thermalresistance,casetoheatsink //permodule Paste=1W/(m*K)/grease=1W/(m*K) Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature min. typ. RthCH 0,02 LsCE 30 nH RCC'+EE' 2,20 m Tstg -40 125 C M5 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Weight G 180 g preparedby:NK dateofpublication:2013-11-05 approvedby:RS revision:2.0 Mountingtorqueformodulmounting 4 max. K/W /TechnicalInformation IGBT- IGBT-modules F4-75R12KS4_B11 PreliminaryData IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 150 150 Tvj = 25C Tvj = 125C 120 120 105 105 90 90 75 75 60 60 45 45 30 30 15 15 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 135 IC [A] IC [A] 135 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V] IGBT- (Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V] IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=7.5,RGoff=7.5,VCE=600V 150 28 Tvj = 25C Tvj = 125C 135 Eon, Tvj = 125C Eoff, Tvj = 125C 24 120 20 105 16 E [mJ] IC [A] 90 75 12 60 45 8 30 4 15 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:NK dateofpublication:2013-11-05 approvedby:RS revision:2.0 5 0 20 40 60 80 IC [A] 100 120 140 /TechnicalInformation IGBT- IGBT-modules F4-75R12KS4_B11 PreliminaryData IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=75A,VCE=600V IGBT- transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 35 1 Eon, Tvj = 125C Eoff, Tvj = 125C ZthJC : IGBT 30 25 E [mJ] ZthJC [K/W] 20 15 0,1 10 5 0 i: 1 2 3 4 ri[K/W]: 0,015 0,0825 0,08 0,0725 i[s]: 0,01 0,02 0,05 0,1 0 0,01 0,001 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 RG [] IGBT- RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=7.5,Tvj=125C 0,01 0,1 t [s] 1 10 Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 175 150 IC, Modul IC, Chip 135 Tvj = 25C Tvj = 125C 150 120 125 105 90 IF [A] IC [A] 100 75 75 60 45 50 30 25 15 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:NK dateofpublication:2013-11-05 approvedby:RS revision:2.0 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 VF [V] /TechnicalInformation IGBT- IGBT-modules F4-75R12KS4_B11 PreliminaryData Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=7.5,VCE=600V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=75A,VCE=600V 6,0 6,0 Erec, Tvj = 125C 5,0 5,0 4,5 4,5 4,0 4,0 3,5 3,5 3,0 3,0 2,5 2,5 2,0 2,0 1,5 1,5 1,0 1,0 0,5 0,5 0,0 0 20 40 60 Erec, Tvj = 125C 5,5 E [mJ] E [mJ] 5,5 80 IF [A] 100 120 0,0 140 Diode transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 RG [] NTC- NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 100000 ZthJC : Diode Rtyp R[] ZthJC [K/W] 10000 0,1 1000 i: 1 2 3 4 ri[K/W]: 0,033 0,1815 0,176 0,1595 i[s]: 0,01 0,02 0,05 0,1 0,01 0,001 0,01 0,1 t [s] 1 100 10 preparedby:NK dateofpublication:2013-11-05 approvedby:RS revision:2.0 7 0 20 40 60 80 100 TC [C] 120 140 160 /TechnicalInformation IGBT- IGBT-modules F4-75R12KS4_B11 PreliminaryData /circuit_diagram_headline J /packageoutlines In fin e o n preparedby:NK dateofpublication:2013-11-05 approvedby:RS revision:2.0 8 /TechnicalInformation IGBT- IGBT-modules F4-75R12KS4_B11 PreliminaryData (www.infineon.com) Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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