
1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
500mW, 1.8 THRU 43 VOLT
5% TOLERANCE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4678 series
devices are silicon Zener diodes designed for
applications requiring an extremely low operating
current (50μA), and low leakage.
MAXIMUM RATINGS: (TL=75°C) SYMBOL UNITS
Power Dissipation PD 500 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
MARKING: Devices shall either be marked with the
prefi x ‘C’ followed by the full part number or by the
marking code in the Electrical Characteristics Table.
Type
Zener
Voltage
VZ @ IZT
Test
Current
Maximum
Reverse Leakage
Current
Maximum
Voltage
Change*
Maximum
Regulator
Current Marking
Code
MIN NOM MAX IZT IR @ VRΔVZIZM
V V V μA μA V V mA
1N4678 1.710 1.8 1.890 50 7.5 1.0 0.70 120.0 C4678
1N4679 1.900 2.0 2.100 50 5.0 1.0 0.70 110.0 C4679
1N4680 2.090 2.2 2.310 50 4.0 1.0 0.75 100.0 C4680
1N4681 2.280 2.4 2.520 50 2.0 1.0 0.80 95.0 C4681
1N4682 2.565 2.7 2.835 50 1.0 1.0 0.85 90.0 C4682
1N4683 2.850 3.0 3.150 50 0.8 1.0 0.90 85.0 C4683
1N4684 3.135 3.3 3.465 50 7.5 1.5 0.95 80.0 C4684
1N4685 3.420 3.6 3.780 50 7.5 2.0 0.95 75.0 C4685
1N4686 3.705 3.9 4.095 50 5.0 2.0 0.97 70.0 C4686
1N4687 4.085 4.3 4.515 50 4.0 2.0 0.99 65.0 C4687
1N4688 4.465 4.7 4.935 50 10 3.0 0.99 60.0 C4688
1N4689 4.845 5.1 5.355 50 10 3.0 0.97 55.0 C4689
1N4690 5.320 5.6 5.880 50 10 4.0 0.96 50.0 C4690
1N4691 5.890 6.2 6.510 50 10 5.0 0.95 45.0 C4691
1N4692 6.460 6.8 7.140 50 10 5.1 0.90 35.0 C4692
1N4693 7.125 7.5 7.875 50 10 5.7 0.75 31.8 C4693
1N4694 7.790 8.2 8.610 50 1.0 6.2 0.50 29.0 C4694
1N4695 8.265 8.7 9.135 50 1.0 6.6 0.10 27.6 C4695
1N4696 8.645 9.1 9.555 50 1.0 6.9 0.08 26.2 C4696
1N4697 9.500 10 10.50 50 1.0 7.6 0.10 24.8 C4697
* ΔVZ=VZ @ 100μA Minus VZ @ 10μA
DO-35 CASE
R6 (23-July 2018)
www.centralsemi.com