CORPORATION a N-Channel JFET High Frequency Amplifier FEATURES @ Industry Standard Part in Low Cost Plastic Package @ High Power Gain @ Low Noise @ Dynamic Range Greater Than 100dB @ Easily Matched to 75Q input APPLICATIONS @ VHF/UHF Amplifiers @ Oscillators @ Mixers PIN CONFIGURATION TO-92 pos 5021 SST308 SST309 SST310 8-49 J308 J310/SST308 SST310 ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise specified) Drain-Gate Voltage ....... 0.0... eee ee eee -25V Drain-Source Voltage. .... 0.6 eee -25V Continuous Forward Gate Current ................ -10mA Storage Temperature Range............. -55C to +150C Operating Temperature Range ........... -65C to +135C Lead Temperature (Soldering, 10sec)............. +300C Power Dissipation ............. 0.0002 ese eee 360mW Derate above 25C 20... cece eee ee 3.27mW/C NOTE: Stresses above those listed under "Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package J308-310 Plastic TO-92 -55C to +135C SST308-310 Plastic SOT-23 -55C to +135C For Sorted Chips in Carriers see U308 series. Temperature Range J308 - J310 /SST308 - SST310 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise specified) SYMBOL PARAMETER 308 309 310 UNITS | TEST CONDITIONS MIN | TYP |MAX| MIN | TYP | MAX] MIN TYP | MAX BVess vag Breakdown | 5 25 -25 V {Ig =-1pA, Vos =0 Gate Reverse Current -1.0 -1.0 -1.0 nA | Vas = -15V, ]Gss fe tren 1.0 -1.0 -1.0 | pA [Vos =0 Ta = 125 Ves(oty Catclt vollage -1.0 65 | -1.0 -4.0 | -20 65) V |VDS=10V,Ip=1nA loss Saturation Drain Current | 45 eo | 12 30 | 24 60 | mA |Vps=10V, Vas =0 {Note 1) Gate-Source . _ _ Vest) | Forward Voltage 1.0 1:0 10 | V_ [Vos =0,Ia=1mA Common-Source Forward Dis Transconductance 8,000 | 17,000 10,000 | 17,000 8,000 | 17,000 Common-Source Output Qos 260 250 250 Vos = 10V Conductance us los Toma f= 1kHz e og ommon-Gate Forward 13,000 13,000 12,000 avo [Goren Gate ut to to 0 ELECTRICAL CHARACTERISTICS (Continued) (Ta = 25C unless otherwise specified) SYMBOL PARAMETER 308 309 310 UNITS TEST CONDITIONS MIN | TYP |MAX| MIN | TYP | MAX| MIN | TYP | MAX Cod Gate-Drain Capacitance 16] 25 18125 18] 25 Vps = 10V, f= 1MHz ; PF | Ves =-10 (Note 2) Cgs Gate-Source Capacitance 43 | 5.0 43 | 5.0 43 | 5.0 Equivalent Short-Circuit nV_ | Vps = 10V, f = 100Hz &n Input Noise Voltage 10 10 10 YHz | tp =10mA (Note 2) Common-Source Forward Reivis) Transconductance 12 12 12 Rewvig common Gate Input 14 14 14 5 B Cc -S Input Revvis) Conductanes npu 0.4 04 0.4 f= 105MHz c S Vos = 10V, ommon-Source Output Ip = 10mA Re(vos) Conductance 0.15 0.15 0.15 (Note 2) Common-Gate Power Gain og at Noise Match 16 16 16 NF Noise Figure 16 16 1.6 dB Common-Gate Power Gain Soe at Noise Match " " u f = 450MHz NF Noise Figure 27 2.7 2.7 NOTES: 1. Pulse test PW 300ps, duty cycle <3%. 2. For design reference only, not 100% tested. 8-50