ST230C14C1LPBF - Vishay Presicion Group

Document Number: 94398 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 1

Phase Control Thyristors

(Hockey PUK Version), 410 A

ST230CPbF Series

Vishay High Power Products

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IT(AV) 410 A

TO-200AB (A-PUK)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IT(AV)

410 A

Ths 55 °C

IT(RMS)

780 A

Ths 25 °C

ITSM

50 Hz 5700 A

60 Hz 5970

I2t50 Hz 163 kA2s

60 Hz 149

VDRM/VRRM 400 to 2000 V

tqTypical 100 µs

TJ- 40 to 125 °C

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VDRM/VRRM, MAXIMUM

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

VRSM, MAXIMUM

NON-REPETITIVE

PEAK VOLTAGE

IDRM/IRRM MAXIMUM

AT TJ = TJ MAXIMUM

ST230C..C

04 400 500

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

18 1800 1900

20 2000 2100

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2Revision: 11-Aug-08

ST230CPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 410 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current

at heatsink temperature IT(AV)

180° conduction, half sine wave

double side (single side) cooled

410 (165) A

55 (85) °C

Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 780

Maximum peak, one-cycle

non-repetitive surge current ITSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

5700

t = 8.3 ms 5970

t = 10 ms 100 % VRRM

reapplied

4800

t = 8.3 ms 5000

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

163

kA2s

t = 8.3 ms 148

t = 10 ms 100 % VRRM

reapplied

115

t = 8.3 ms 105

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1630 kA2√s

Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.92 V

High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.98

Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.88 mΩ

High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.81

Maximum on-state voltage VTM Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.69 V

Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA

Maximum (typical) latching current IL1000 (300)

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise

of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs

TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Typical delay time td

Gate current 1 A, dIg/dt = 1 A/µs

Vd = 0.67 % VDRM, TJ = 25 °C 1.0

µs

Typical turn-off time tq

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,

VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise

of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs

Maximum peak reverse and

off-state leakage current

IRRM,

IDRM

TJ = TJ maximum, rated VDRM/VRRM applied 30 mA

Document Number: 94398 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 3

ST230CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 410 A Vishay High Power Products

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

VALUES UNITS

TYP. MAX.

Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10.0 W

Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

Maximum peak positive gate current IGM TJ = TJ maximum, tp ≤ 5 ms 3.0 A

Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp ≤ 5 ms 20 V

Maximum peak negative gate voltage - VGM 5.0

DC gate current required to trigger IGT

TJ = - 40 °C

Maximum required gate trigger/

current/voltage are the lowest

value which will trigger all units

12 V anode to cathode applied

180 -

TJ = 25 °C 90 150 mA

TJ = 125 °C 40 -

DC gate voltage required to trigger VGT

TJ = - 40 °C 2.9 -

TJ = 25 °C 1.8 3.0

TJ = 125 °C 1.2 -

DC gate current not to trigger IGD

TJ = TJ maximum

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

unit with rated VDRM anode to

cathode applied

10 mA

DC gate voltage not to trigger VGD 0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range TJ- 40 to 125 °C

Maximum storage temperature range TStg - 40 to 150

Maximum thermal resistance,

junction to heatsink RthJ-hs

DC operation single side cooled 0.17

K/W

DC operation double side cooled 0.08

Maximum thermal resistance,

case to heatsink RthC-hs

DC operation single side cooled 0.033

DC operation double side cooled 0.017

Mounting force, ± 10 % 4900

(500)

(kg)

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔRthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.015 0.017 0.011 0.011

TJ = TJ maximum K/W

120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.036

30° 0.060 0.060 0.060 0.061

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4Revision: 11-Aug-08

ST230CPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 410 A

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-State Power Loss Characteristics

Fig. 6 - On-State Power Loss Characteristics

Average On-state Current (A)

Maximum Allowable Heatsink Temperature (°C)

100

110

120

130

0 40 80 120 160 200 240 280 320

30°

60° 90°

120°

180°

Conduction Angle

ST230C..C Series

(Single Side Cooled)

R (DC) = 0.17 K/W

thJ-hs

Average On-state Current (A)

Maximum Allowable Heatsink Temperature (°C)

100

110

120

130

0 100 200 300 400 500

30°

60°

90°

120°

180°

Conduction Period

ST230C..C Series

(Single Side Cooled)

R (DC) = 0.17 K/W

thJ-hs

Average On-state Current (A)

Maximum Allowable Heatsink Temperature (°C)

100

110

120

130

0 100 200 300 400 500 600

30°

60°

90°

120°

180°

Conduction Angle

ST230C..C Series

(Double Side Cooled)

R (DC) = 0.08 K/W

thJ-hs

Average On-state Current (A)

Maximum Allowable Heatsink Temperature (°C)

100

110

120

130

0 100 200 300 400 500 600 700 800

30°

60°

90°

120°

180°

Conduction Period

ST230C..C Series

(Double Side Cooled)

R (DC) = 0.08 K/W

thJ-hs

Average On-state Current (A)

Maximum Allowable Heatsink Temperature (°C)

100

200

300

400

500

600

700

800

900

1000

1100

0 100 200 300 400 500 600

180°

120°

90°

60°

30° RMS Limit

Conduction Angle

ST230C..C Series

T = 125°C

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

200

400

600

800

1000

1200

1400

0 200 400 600 800 1000

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

ST230C..C Series

T = 125°C

Document Number: 94398 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 5

ST230CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 410 A Vishay High Power Products

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 9 - On-State Voltage Drop Characteristics

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave On-state Current (A)

2000

2500

3000

3500

4000

4500

5000

5500

110100

ST230C..C Series

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Initial Tj = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

Pulse Train Duration (s)

Peak Half Sine Wave On-state Current (A)

2000

2500

3000

3500

4000

4500

5000

5500

6000

6500

0.01 0.1 1

Versus Pulse Train Duration. Control

Maximum Non Repetitive Surge Current

Of Conduction May Not Be Maintained.

ST230C..C Series

Initial Tj = 125°C

No Voltage Reapplied

Rated Vrrm Reapplied

Instantaneous On-state Voltage (V)

Instantaneous On-state Current (A)

100

1000

10000

0.5 1 1.5 2 2.5 3 3.5 4 4.5

ST230C..C Series

Tj = 25°C

Tj = 125°C

Square Wave Pulse Duration (s)

Transient Thermal Impedance Z (K/W)

thJ-hs

0.001

0.01

0.1

0.001 0.01 0.1 1 10

Steady State Value

R = 0.17 K/W

(Single Side Cooled)

R = 0.08 K/W

(Double Side Cooled)

(DC Operation)

thJ-hs

ST230C..C Series

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6Revision: 11-Aug-08

ST230CPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 410 A

Fig. 11 - Gate Characteristics

ORDERING INFORMATION TABLE

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

0.1

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

Tj=25 °C

Tj=125 °C

Tj=-40 °C

(2)

a) Recommended load line for

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

Frequency Limited by PG(AV)

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

Rectangular gate pulse

Device: ST230C..C Series

(3)(1) (4)

- Thyristor

- Essential part number

- 0 = Converter grade

- Lead (Pb)-free

- C = Ceramic PUK

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

- C = PUK case TO-200AB (A-PUK)

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

- Critical dV/dt: None = 500 V/µs (Standard selection)

L = 1000 V/µs (Special selection)

Device code

51 324

6789

ST 23 0 C 20 C 1 PbF

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95074

Document Number: 95074 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 01-Aug-07 1

TO-200AB (A-PUK)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

4.75 (0.19)

28 (1.10)

6.5 (0.26)

19 (0.75)

DIA. MAX. 0.3 (0.01) MIN.

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

25° ± 5°

Gate terminal for

1.47 (0.06) DIA.

pin receptacle

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

42 (1.65) MAX.

Anode to gate

Creepage distance: 7.62 (0.30) minimum

Strike distance: 7.12 (0.28) minimum

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see thermal and mechanical specification)

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Revision: 12-Mar-12 1Document Number: 91000

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