High Voltage, High Gain BIMOSFETTM IXBF55N300 VCES = 3000V IC110 = 34A VCE(sat) 3.2V Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25C to 150C 3000 V VCGR TJ = 25C to 150C, RGE = 1M 3000 V VGES Continuous 25 V VGEM Transient 35 V IC25 TC = 25C 86 A IC110 TC = 110C 34 A ICM TC = 25C, 1ms 600 A SSOA (RBSOA) VGE = 15V, TVJ = 125C, RG = 2 Clamped Inductive Load ICM = 110 VCE 0.8 * VCES A TSC (SCSOA) VGE = 15V, TJ = 125C, RG = 10, VCE = 1250V, Non-Repetitive PC TC = 25C 1 5 1 = Gate 2 = Emitter s 357 W -55 ... +150 C z TJM 150 C z Tstg -55 ... +150 C z 300 260 C C z 20..120 / 4.5..27 Nm/lb.in. 4000 V~ 5 g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds FC Mounting Force VISOL 50/60Hz, 1 Minute Weight z z Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 3000 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 25V VCE(sat) IC = 55A, VGE = 15V, Note 1 2.7 TJ = 125C (c) 2011 IXYS CORPORATION, All Rights Reserved 3.3 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage z Low Gate Drive Requirement High Power Density Applications V Note 2, TJ = 125C 5 = Collector Advantages z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Isolated Tab Features 10 TJ 2 5.0 V 50 3 A mA 200 nA 3.2 V z z z z z Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100205B(11/11) IXBF55N300 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 55A, VCE = 10V, Note 1 32 Cies ISOPLUS i4-PakTM (HV) Outline 50 S 7300 pF 275 pF Cres 83 pF Qg 335 nC 47 nC 130 nC Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 55A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25C IC = 110A, VGE = 15V VCE = 1250V, RG = 2 Resistive Switching Times, TJ = 125C IC = 110A, VGE = 15V VCE = 1250V, RG = 2 54 ns 307 ns 230 ns 268 ns 52 ns 585 ns 215 ns 260 ns RthJC Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated 0.35 C/W RthCS 0.15 C/W Reverse Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 55A, VGE = 0V, Note 1 2.5 V trr IF = 28A, VGE = 0V, -diF/dt = 100A/s 1.9 s IRM VR = 100V, VGE = 0V 54 A Notes: 1. Pulse test, t < 300s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF55N300 Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 300 120 VGE = 25V 20V 15V 250 200 80 IC - Amperes IC - Amperes 100 VGE = 25V 20V 15V 10V 60 40 10V 150 100 20 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 3 4 5 6 VCE - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. Dependence of VCE(sat) on Junction Temperature 120 1.8 VGE = 25V 20V 15V 10V 40 I 1.4 C 125 150 = 110A 1.2 I C = 55A 1.0 I 20 8 VGE = 15V 80 60 7 1.6 VCE(sat) - Normalized 100 IC - Amperes 1 VCE - Volts C = 27.5A 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 5.5 TJ = 25C 5.0 160 140 4.0 I C IC - Amperes VCE - Volts 4.5 = 110A 3.5 100 80 TJ = 125C 25C - 40C 60 55A 3.0 120 40 2.5 20 27.5A 0 2.0 5 6 7 8 9 10 11 12 VGE - Volts (c) 2011 IXYS CORPORATION, All Rights Reserved 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBF55N300 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 180 100 TJ = - 40C 90 160 140 70 25C 60 125C 120 IF - Amperes g f s - Siemens 80 50 40 TJ = 25C 100 TJ = 125C 80 60 30 40 20 20 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 9. Gate Charge 2.0 2.2 2.4 2.6 2.8 3.0 Fig. 10. Capacitance 16 100,000 VCE = 1000V 14 f = 1 MHz I C = 55A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 1.8 VF - Volts IC - Amperes 10 8 6 4 10,000 Cies 1,000 Coes 100 Cres 2 10 0 0 50 100 150 200 250 300 0 350 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 120 100 Z(th)JC - C / W IC - Amperes 80 60 40 0.1 0.01 TJ = 125C 20 0 200 RG = 2 dv / dt < 10V / ns 600 1000 1400 1800 2200 2600 3000 0.001 0.0001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBF55N300 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 700 600 VCE = 1250V 500 I C = 220A 400 I C TJ = 125C t r - Nanoseconds t r - Nanoseconds 700 RG = 2 , VGE = 15V 600 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current = 110A 500 RG = 2 , VGE = 15V VCE = 1250V 400 TJ = 25C 300 300 200 200 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 TJ - Degrees Centigrade 720 VCE = 1250V td(on) - - - - 80 620 70 I C = 110A 580 560 3 4 5 6 7 8 9 10 11 12 13 14 280 220 I C = 110A 270 200 260 250 160 50 240 140 40 230 25 15 35 45 55 300 300 240 280 220 260 200 240 180 160 TJ = 125C, 25C 200 140 95 105 115 120 125 160 180 200 IC - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 140 220 td(off) - - - - 600 TJ = 125C, VGE = 15V VCE = 1250V 320 520 I C = 110A 300 440 280 360 I C = 220A 260 280 240 200 220 120 2 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds 260 120 tf 280 VCE = 1250V 100 85 680 340 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 320 80 75 360 t f - Nanoseconds tf RG = 2, VGE = 15V 60 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 320 40 180 I C = 220A 60 TJ - Degrees Centigrade 380 220 260 240 Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 340 280 290 RG - Ohms 360 220 300 td(off) - - - - VCE = 1250V t f - Nanoseconds t r - Nanoseconds I C = 220A t d(on) - Nanoseconds 90 2 200 RG = 2, VGE = 15V 300 100 660 600 tf 310 110 TJ = 125C, VGE = 15V 640 180 t d(off) - Nanoseconds 680 160 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 320 120 tr 140 IC - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 700 120 IXBF55N300 Fig. 20. Forward-Bias Safe Operating Area Fig. 19. Forward-Bias Safe Operating Area @ T C = 75C @ T C = 25C 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 10 25s ID - Amperes ID - Amperes 25s 100s 1ms 1 10 100s 1 1ms 10ms TJ = 150C 0.1 TC = 25C TC = 75C Single Pulse 100ms DC Single Pulse 10ms TJ = 150C 0.1 100ms DC 0.01 0.01 1 10 100 1,000 10,000 1 VDS - Volts 10 100 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_55N300(8T) 11-03-11-C