IXBF55N300 - Zilog - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VCES TC = 25°C to 150°C 3000 V

VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V

VGES Continuous ± 25 V

VGEM Transient ± 35 V

IC25 TC = 25°C 86 A

IC110 TC = 110°C 34 A

ICM TC = 25°C, 1ms 600 A

SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 110 A

(RBSOA) Clamped Inductive Load VCE ≤ 0.8 • VCES

TSC VGE = 15V, TJ = 125°C,

(SCSOA) RG = 10Ω, VCE = 1250V, Non-Repetitive 10 μs

PCTC = 25°C 357 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10 seconds 260 °C

FCMounting Force 20..120 / 4.5..27 Nm/lb.in.

VISOL 50/60Hz, 1 Minute 4000 V~

Weight 5 g

DS100205B(11/11)

IXBF55N300

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVCES IC = 1mA, VGE = 0V 3000 V

VGE(th) IC = 4mA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE = 0V 50 μA

Note 2, TJ = 125°C 3 mA

IGES VCE = 0V, VGE = ± 25V ±200 nA

VCE(sat) IC = 55A, VGE = 15V, Note 1 2.7 3.2 V

TJ = 125°C 3.3 V

VCES = 3000V

IC110 = 34A

VCE(sat) ≤≤

≤≤

≤ 3.2V

High Voltage, High Gain

BIMOSFETTM

Monolithic Bipolar

MOS Transistor

(Electrically Isolated Tab)

1 = Gate 5 = Collector

2 = Emitter

ISOPLUS i4-PakTM

Isolated Tab

1

5

2

Features

zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

zIsolated Mounting Surface

z4000V~ Electrical Isolation

zHigh Blocking Voltage

zHigh Peak Current Capability

zLow Saturation Voltage

Advantages

zLow Gate Drive Requirement

zHigh Power Density

Applications

zSwitch-Mode and Resonant-Mode

Power Supplies

zUninterruptible Power Supplies (UPS)

zLaser Generators

zCapacitor Discharge Circuits

zAC Switches

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBF55N300

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfS IC = 55A, VCE = 10V, Note 1 32 50 S

Cies 7300 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 275 pF

Cres 83 pF

Qg 335 nC

Qge IC = 55A, VGE = 15V, VCE = 1000V 47 nC

Qgc 130 nC

td(on) 54 ns

tr 307 ns

td(off) 230 ns

tf 268 ns

td(on) 52 ns

tr 585 ns

td(off) 215 ns

tf 260 ns

RthJC 0.35 °C/W

RthCS 0.15 °C/W

Resistive Switching Times, TJ = 125°C

IC = 110A, VGE = 15V

VCE = 1250V, RG = 2Ω

Resistive Switching Times, TJ = 25°C

IC = 110A, VGE = 15V

VCE = 1250V, RG = 2Ω

Reverse Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max

VF IF = 55A, VGE = 0V, Note 1 2.5 V

trr 1.9 μs

IRM 54 A

IF = 28A, VGE = 0V, -diF/dt = 100A/μs

VR = 100V, VGE = 0V

ISOPLUS i4-PakTM (HV) Outline

Pin 1 = Gate

Pin2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

Notes:

1. Pulse test, t < 300μs, duty cycle, d < 2%.

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.

IXBF55N300

Fi g . 1. Outpu t C h ar acte r i sti cs @ T

J

= 25ºC

0

20

40

60

80

100

120

0 0.5 1 1.5 2 2.5 3 3.5 4

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fi g . 2. Exten d ed O u tp u t Char a cter i stics @ T

J

= 25ºC

0

50

100

150

200

250

300

012345678

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fi g . 3. Ou tp u t C h a r acter i stics @ T

J

= 125ºC

0

20

40

60

80

100

120

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fi g. 4. Dep en d en ce of V

CE(sat)

on

Junction T emperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 110A

I

C

= 55A

I

C

= 27.5A

Fi g . 5. C o l l ecto r -to -E mi tter Vo l ta g e

vs. Gate-to-Emit ter Voltag e

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 110A

T

J

= 25ºC

27.5A

55A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

V

GE

- Volts

I

C

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBF55N300

Fi g . 7. Transco n d u cta n ce

0

10

20

30

40

50

60

70

80

90

100

0 20 40 60 80 100 120 140 160 180 200

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g. 9. Gate C har g e

0

2

4

6

8

10

12

14

16

0 50 100 150 200 250 300 350

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 1000V

I

C

= 55A

I

G

= 10mA

Fi g. 11. R everse-Bi as Safe Operatin g Area

0

20

40

60

80

100

120

200 600 1000 1400 1800 2200 2600 3000

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 2Ω

dv / dt < 10V / ns

Fig. 10. Capacitance

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

Fig. 8. Forward Voltage Drop of Intrinsic Diod e

0

20

40

60

80

100

120

140

160

180

0.40.60.81.01.21.41.61.82.02.22.42.62.83.0

V

F

- Volts

I

F

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fi g . 12. Maximu m Tran si en t Ther mal I mp ed anc e

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

IXBF55N300

Fig . 14. R esisti ve Tu r n -o n R ise Time vs.

Collector Current

200

300

400

500

600

700

40 60 80 100 120 140 160 180 200 220

I

C

- Amperes

t

r

- Nanoseconds

T

J

= 125ºC

T

J

= 25ºC

R

G

= 2Ω , V

GE

= 15V

V

CE

= 1250V

Fig . 15. R esi stive Tu r n-o n Switchi n g Ti mes vs.

Gate R esi st an ce

560

580

600

620

640

660

680

700

720

2 3 4 5 6 7 8 9 10 11 12 13 14 15

R

G

- Ohms

t

r

- Nanoseconds

40

50

60

70

80

90

100

110

120

t

d

(

on

)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 1250V

I

C

= 220A

I

C

= 110A

Fi g. 16. R esisti ve Tu r n-o ff Switchi n g Ti mes vs.

Junction Tem p erature

230

240

250

260

270

280

290

300

310

320

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

120

140

160

180

200

220

240

260

280

300

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 2Ω, V

GE

= 15V

V

CE

= 1250V

I

C

= 220A

I

C

= 110A

Fig. 17. Resistive T urn-off Switching Times vs.

Collector Current

200

220

240

260

280

300

320

340

360

380

40 60 80 100 120 140 160 180 200 220

I

C

- Amperes

t

f

- Nanoseconds

140

160

180

200

220

240

260

280

300

320

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 2Ω, V

GE

= 15V

V

CE

= 1250V

T

J

= 125ºC, 25ºC

Fi g . 13 . R esi s ti ve Turn -o n R i se Time vs .

Junction Temp eratu re

200

300

400

500

600

700

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 2Ω , V

GE

= 15V

V

CE

= 1250V

I

C

= 220A

I

C

= 110A

Fig. 18. Resistive T urn-off Switching Times vs.

Gate Resi sta nce

220

240

260

280

300

320

340

360

23456789101112131415

R

G

- Ohms

t

f

- Nanoseconds

120

200

280

360

440

520

600

680

t

d

(

off

)

- Nanoseconds

t

f

t

d(off

)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 1250V

I

C

= 220A

I

C

= 110A

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBF55N300

IXYS REF: B_55N300(8T) 11-03-11-C

Fig. 19. Forward-Bias Safe Operating Area

@ T

C

= 25ºC

0.01

0.1

1

10

100

1000

1 10 100 1,000 10,000

V

DS - Volts

ID - Amperes

TJ = 150ºC

TC = 25ºC

Single Pulse

100µs

1ms

VCE(sat) Limit

25µs

10ms

100ms

DC

Fi g. 20. F o rwar d - B i as Saf e Oper ating Area

@ T

C

= 75ºC

0.01

0.1

1

10

100

1000

1 10 100 1,000 10,000

V

DS - Volts

ID - Amperes

TJ = 150ºC

TC = 75ºC

Single Pulse

100µs

1ms

VCE

(sat)

Limit

25µs

10ms

100ms

DC