Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays
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TSZ02201-0F2F0A200320-1-2
© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
TSZ22111 14 001
www.rohm.com
Boundary Conduction Mode
Power Factor Correction Controller IC
BD7692FJ
General Description
BD7692FJ is Power Factor Correction for AC/DC
supplies the system which is suitable for all the products
needing power factor improvement. The PFC adopts
boundary conduction mode (BCM), and switching loss
reduction and noise reduction are possible by Zero
Current Detection (ZCD). ZCD detects by resistance, the
auxiliary winding is unnecessary.
Features
Boundary Conduction Mode
Low Power Consumption
VCCUVLO
Resister Detection for ZCD
Switching Loss Reduction, Noise Reduction by ZCD
Dynamic and Static OVP by the VS Pin
High Accuracy Over Current Detection (±4 %)
Error Amplifier Input Short Protection
Stable MOSFET Gate Drive by the Clamper
Protection Function by the OVP Pin
Over Voltage Reduce by Soft Start
Safe Design by the IS-GND Short Timer Operation
Applications
AC Adopter, TV, Lighting Equipment, Refrigerator,
etc.
Key Specifications
Input Voltage Range: 10 V to 26 V
Operating Current: 470 µA (Typ)
Maximum Frequency: 450 kHz (RRT120 kΩ)
Operating Temperature Range: -40 °C to +105 °C
Package W(Typ) x D(Typ) x H(Max)
SOP-J8 4.90 mm x 6.00 mm x 1.65 mm
Typical Application Circuit
BD7692FJ
VCC GND
VS
ISOUT
VCC
OVP
Diode
Bridge
VS RT OVPEO
VS OVP
390V
Datashee
t
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BD7692FJ
TSZ02201-0F2F0A200320-1-2
© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
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TSZ22111 15 001
Pin Configuration
Pin Descriptions
Block Diagram
BD7692FJ
1 2
87
VCC GND ISOUT
65
VS RT OVPEO
34
(TOP VIEW)
Pin No.
Pin Name
I/O
Function
ESD Diode
VCC
GND
1
VS
I
Feedback input
-
2
EO
I/O
Error amp output
-
3
RT
I/O
Maximum frequency setting
-
4
OVP
I
Over voltage protection
-
5
IS
I
Zero current and over current detection
-
6
GND
-
GND
-
7
OUT
O
External MOSFET gate control
-
8
VCC
I
VCC
-
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BD7692FJ
TSZ02201-0F2F0A200320-1-2
© 2018 ROHM Co., Ltd. All rights reserved.
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TSZ22111 15 001
Description of Blocks
1 VCC Protection
This IC has VCC UVLO (Under Voltage Lock Out) of the VCC pin. Switching stops at the time of VCC voltage drop.
2 Power Factor Correction
The power factor improvement circuit is a voltage control method of Boundary Conduction Mode.
The outline operation circuit diagram is shown in Figure 1. The switching operation is shown in Figure 2.
Switching Operation
1. MOSFET is turned on, and IL increases.
2. The IC compares VEO with VRAMP slope decided in RT pin, and MOSFET is off when the VRAMP voltage higher than VEO.
3. MOSFET is off, and IL decreases.
4. The IS pin detects a zero point of the IL and turns on MOSFET.
Figure 1. Operation Circuit Outline
Figure 2. Switching Operation Timing Chart
OUT
I
L
GND
VS
IS
VDS
RIS
COIL
Zero current and
OCP detection
GND
EO
MOSFET
PFC OUT
Feedback Resistance
PFC OUT
ACIN
Diode
Bridge
OUT
(Gate)
MOSFET
(VDS)
I
L
VEO
VZCD
1
2
3
4
VRAMP
(Internal)
IL
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BD7692FJ
TSZ02201-0F2F0A200320-1-2
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TSZ22111 15 001
Description of Blocks - continued
3 About ErrAMP
3.1 GmAMP
The VS pin monitors a divided point for resistance of the output voltage. The ripple voltage of AC frequency (50 Hz/60
Hz) overlaps with the VS pin. GmAMP removes this ripple voltage. GmAMP compares VAMP (2.500 V Typ) with the
removed voltage, GmAMP controls the EO voltage by this gap. When the EO pin voltage rises, ON width of the OUT pin
becomes wide. When the EO voltage less than VOFF_TH (0.30 V Typ), the IC stops switching. Therefore, it can stop
switching operation when the EO pin connects to the GND.
Please set the external parts number of the error amplifier so that AC frequency does not overlap in EO pin. And, please
confirm it by an actual board.
Figure 3. GmAMP Block Diagram
3.2 VS Short Protection
The VS pin has a short protection function.
A state of VS pin voltage < VSHORT (0.300 V Typ) continues tVS_SH (150 µs Typ) or more, it stops switching.
Figure 4 shows the operation.
Figure 4. Operation of VS Short Protection
3.3 VS Low Voltage Gain Increase Function
When output voltage decreases by output load sudden changes, an output voltage drop period becomes long because
a voltage control loop is slow. The VS pin voltage becomes lower than VGUP (2.250 V Typ) (equivalent to -10 % of output
voltage), the error amplifier increases the speed of the voltage control loop. ON width of OUT increases and prevents a
long-term drop of the output voltage. When the VS pin voltage rises from VGUP (2.250 V Typ), this operation stops.
VS
-
+
PFC Output
EO
2.500 V
VS
PFC
Output
VOUT
VSHORT
OUT
Switching Stop
tVS_SH
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BD7692FJ
TSZ02201-0F2F0A200320-1-2
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TSZ22111 15 001
3 About ErrAMP - continued
3.4 VS Overvoltage Gain Increase Function (DOVP)
When output voltage rises by startup or a rapid change of the output load, output voltage rises for a long term because a
voltage control loop is slow. The VS pin voltage becomes VOVP (2.625 V Typ) (equivalent to +5 % of output voltage), the
error amplifier increases the speed of the voltage control loop. By this operation, it reduces ON width of OUT and
prevents a long-term rise of the output voltage. When the VS pin voltage decreases under VOVP (2.625 V Typ), this
operation stops.
3.5 VS Overvoltage Protection Function (SOVP)
IC has static OVP for the time when VS is above the overvoltage gain increase function voltage VOVP.
The VS pin voltage rises from VOVP1 (2.725 V Typ), it stops switching immediately. The VS pin voltage less than VOVP2
(2.600 V Typ), it starts switching. Figure 5 shows the operation.
VS
PFC
Output
OUT Switching
Stop
VOVP1
VOVP2
3.6 Over Voltage Reduce Function at Start Up (OVR)
When the VS pin voltage performs a rise in startup to VGUP (2.250 V Typ) (equivalent to -10 % of output voltage), it
discharges the EO voltage to the off threshold voltage forcibly. OUT pulse width is narrows when the EO voltage falls,
through rate of output voltage becomes slow and reduces over voltage in the startup.
This function is effective only once after VCCUVLO cancellation.
4 OVP Pin Over Voltage Protection
The OVP pin is an overvoltage protection function to use when VS feedback circuit is above static OVP (cf. Figure 6) at the
time of abnormality. When the OVP pin voltage rises over VOVP3 (2.7 V Typ), it stops switching operation after tOVP3 (60 µs
Typ) (cf. Figure 7). If the OVP pin becomes VOVP4 (2.6 V Typ) or less, it restarts operation.
OVP
OUT
PFC-OUT
-
+
2.7V/2.6V
Driver
Logic
Figure 6. OVP Over Voltage Protection
Figure 7. Timing Chart
OVP
OUT
tOVP3
VOVP3
Figure 5. VS Overvoltage Protection Operation
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BD7692FJ
TSZ02201-0F2F0A200320-1-2
© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
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TSZ22111 15 001
Description of Blocks - continued
5 IS Pin
5.1 Zero Current Detection and Overcurrent Detection Function
The zero current detection circuit is a function to detect a zero cross of the inductor current (IL) (cf. Figure 8).
When the voltage of the IS pin becomes higher than the zero current detection voltage, the OUT output becomes High
after progress at zero current detection delay time (tZCDD 1.35 µs Typ). Please set the RIS value about the overcurrent
detection of the inductor current (IL) so that the IS pin voltage becomes VIS_OCP (-0.60 V Typ) or less. In addition, it
recommends that to add CR filter for switching noise reduction. Figure 9 shows the operation.
IS OUT
-
+
-10mV
-0.60V
Delay
Over Current Protection
Driver
Logic
-
+
Figure 8. IS Current Detection Circuit
Figure 9. IS Zero Current Detection Delay Time
5.2 IS-GND Short Function
When the IS pin short-circuits with the GND pin, zero current detection is not possible. It is the IS voltage > -10 mV in off
timing of the OUT pin in the case of -10 mV, IC operates the restart timer. It can prevent CCM operation by discharging
the current which collected to the coil in a restart time.
6 RT Pin
This pin sets frequency of the slope voltage formed in the IC inside by external resistance. Figure 10 shows RT resistor
value and relations of the maximum frequency. The maximum ON width on the application is calculated in the following
formula. Figure 11 shows relations of RT resistor value and maximum ON width.
 
[s]
Where:
 is the minimum input voltage.
is the inductance.
 is the maximum output power.
 is the efficiency.
Necessary tON_MAX on application can be check as upper formula. Please set ON width in the RT pin tON_MAX or more.
In addition, it shows relations of RT resistor value and PFC zero current detection Delay in Figure 12.
The high-speed frequency in the light load is limited by RT pin to improve efficiency in the light load.
External resistance of the RT pin can set only 39 kΩ, 68 kΩ, 120 kΩ, 220 kΩ, 470 .
Do not set the fixed number except the designated value for RT external resistance.
The IC reads RT resistor value at the time of VCCUVLO cancellation and establishes setting. The setting is not changed
even if it changes RT resistor value after VCCUVLO cancellation.
OUT
IS
-10mV
tZCDD
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TSZ02201-0F2F0A200320-1-2
© 2018 ROHM Co., Ltd. All rights reserved.
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TSZ22111 15 001
6 RT Pin - continued
Figure 12. Zero Current Detection Voltage Delay vs RT Resister Value
Table 1. RT Resister Value Characteristics (reference value)
RRT (kΩ)
fMAXDUTY (kHz)
tMAXDUTY (µs)
tZCDD (µs)
39
580
10
1.10
68
500
15
1.20
120
450
20
1.35
220
420
25
1.40
470
410
30
1.45
*These table and graph mentioned above are reference value. After the confirmation of the actual board, please set the fixed
number.
*The characteristic kind to fluctuate by RT resistance is only five kinds. When RT resistance is set other than the resistor
value mentioned above, it becomes the factor of the unstable operation.
Figure 10. Maximum Frequency vs RT Resister Value
Figure 11. Maximum ON Width vs RT Resister Value
Figure 10. fMAXDUTY vs RRT
Figure 11. tMAXDUTY vs RRT
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BD7692FJ
TSZ02201-0F2F0A200320-1-2
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TSZ22111 15 001
Operation Mode of the Protective Circuit
Table2 shows the operation mode of each protection function.
Table 2. Operation Mode of Each Protective Circuit
Parameter
Contents
Protection mode
Detection Method
Detect
Operation
Cancellation
Method
Cancellation
Operation
VCCUVLO
VCC Pin Low
Voltage Protection
VCC<9.0 V(Typ)
(VCC Drop)
OUT Stop
EO Discharge
VCC>12.0 V(Typ)
(VCC Rise)
Startup
Operation
IS OCP
IS Pin Over Current
Protection
IS<-0.60 V(Typ)
(IS Drop)
OUT Stop
IS>-0.60 V(Typ)
(IS Rise)
Normal
Operation
VS Short
Protection
VS Pin Short
Protection
VS<0.300 V(Typ)
(VS Drop)
OUT Stop
EO Discharge
VS>0.300 V(Typ)
(VS Rise)
Normal
Operation
VS Gain Increase
VS Pin Low Voltage
Gain Increase
VS<2.250 V(Typ)
(VS Drop)
Gm Amplifier
GAIN Increase
VS>2.250 V(Typ)
(VS Rise)
Normal
Operation
VS Dynamic OVP
VS Pin Overvoltage
Protection 1
VS>2.625 V(Typ)
(VS Rise)
Gm Amplifier
GAIN Increase
VS<2.625 V(Typ)
(VS Drop)
Normal
Operation
VS Static OVP
VS Pin Overvoltage
Protection 2
VS>2.725 V(Typ)
(VS Rise)
OUT Stop
VS<2.600 V(Typ)
(VS Drop)
Normal
Operation
OVP
OVP Pin
Overvoltage
Protection 3
OVP>2.700 V(Typ)
(OVP Rise)
OUT Stop
OVP<2.600 V(Typ)
(OVP Drop)
Normal
Operation
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BD7692FJ
TSZ02201-0F2F0A200320-1-2
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TSZ22111 15 001
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Symbol
Rating
Unit
Condition
Maximum Voltage 1
VMAX1
-0.3 to +28.0
V
VCC
Maximum Voltage 2
VMAX2
-0.3 to +15.0
V
OUT
Maximum Voltage 3
VMAX3
-0.3 to +6.5
V
OVP, RT, VS, EO
Maximum Voltage 4
VMAX4
-6.5 to +0.3
V
IS(Exclude 20 ms after input voltage injection)
IS Pin Maximum Current
IIS
-20
mA
IS(20 ms or less after input voltage injection)
OUT Pin Output Peak Current 1
IOUT1
-0.5
A
Source current
OUT Pin Output Peak Current 2
IOUT2
+1.0
A
Sink current
Maximum Junction Temperature
Tjmax
+150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated
over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing
board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance(Note 1)
Parameter
Symbol
Thermal Resistance (Typ)
Unit
1s(Note 3)
2s2p(Note 4)
SOP-J8
Junction to Ambient
θJA
149.3
76.9
°C/W
Junction to Top Characterization Parameter(Note 2)
ΨJT
18
11
°C/W
(Note 1) Based on JESD51-2A(Still-Air)
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of
the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Material
Board Size
Single
FR-4
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70 μm
Layer Number of
Measurement Board
Material
Board Size
4 Layers
FR-4
114.3 mm x 76.2 mm x 1.6 mmt
Top
2 Internal Layers
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70 μm
74.2 mm x 74.2 mm
35 μm
74.2 mm x 74.2 mm
70 μm
Recommended Operating Conditions
Parameter
Symbol
Rating
Unit
Condition
Min
Typ
Max
Supply Voltage
VCC
10.0
15.0
26.0
V
VCC Voltage
Operation Temperature
Topr
-40
+25
+105
°C
Recommended Range of the External Component (Ta=25 °C)
Parameter
Symbol
Rating
Unit
VCC Pin Connection Capacity
CVCC
10.0 or more
μF
RT Resister Value
RRT
39, 68, 120, 220, 470
Do not set the fixed number except the designated value for RT external resistance.
10/22
BD7692FJ
TSZ02201-0F2F0A200320-1-2
© 2018 ROHM Co., Ltd. All rights reserved.
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TSZ22111 15 001
Electrical Characteristics (Unless otherwise specified Ta = 25 °C, VCC = 15 V)
Parameter
Symbol
Specifications
Unit
Condition
Min
Typ
Max
[Circuit Current]
Circuit Current(ON)1
ION1
-
470
1000
µA
VS=1.0 V, EO=OPEN,
RRT=120 kΩ, OVP=OPEN
Circuit Current (ON)2
ION2
-
530
1200
µA
VS=1.0 V, EO=OPEN,
RRT=120 kΩ, OVP=0 V
(PULSE operation)
Start Up Current
ION3
-
55
110
µA
VCC=11 V
[VCC Pin Protection]
VCC UVLO Voltage1
VUVLO1
11.0
12.0
13.0
V
VCC rise
VCC UVLO Voltage2
VUVLO2
8.0
9.0
10.0
V
VCC drop
VCC UVLO Hysteresis
VUVLO3
-
3.0
-
V
VUVLO3 = VUVLO1 -VUVLO2
[Gm Amplifier Block]
VS Pin Pull-up Current
IVS
-
0.7
-
µA
Gm Amplifier
Reference Voltage 1
VAMP
2.465
2.500
2.535
V
Gm Amplifier Line Regulation
VAMP_LINE
-20
-1
-
mV
VCC=10 V to 26 V
Gm Amplifier
Trans Conductance
TVS
45
70
95
µA/V
EO=2.5 V
VGUP <VS<VOVP
Gm Amplifier Source Current
IEO_SOURCE
30
50
70
µA
VS=1.0 V
Gm Amplifier Sink Current
IEO_SINK
30
50
70
µA
VS=3.5 V
[EO Block]
Off Threshold Voltage
VOFF_TH
0.15
0.30
0.60
V
EO Discharge Current
IEO
1
2
4
mA
VCC=11 V, EO=1.0 V
[OSC Block]
Maximum ON Width1
tMAXDUTY1
8
10
12
µs
RRT=39 kΩ, EO=4.0 V
Maximum ON Width2
tMAXDUTY2
16
20
24
µs
RRT=120 kΩ, EO=4.0 V
Maximum ON Width3
tMAXDUTY3
24
30
36
µs
RRT=470 kΩ, EO=4.0 V
Maximum Frequency1
fMAXDUTY1
493
580
667
kHz
RRT=39 kΩ, EO=0.3 V
Maximum Frequency2
fMAXDUTY2
382
450
518
kHz
RRT=120 kΩ, EO=0.3 V
Maximum Frequency3
fMAXDUTY3
348
410
472
kHz
RRT=470 kΩ, EO=0.3 V
RT Output Voltage
VRT
0.9
1.2
1.8
V
RRT=120
[IS Block]
Zero Current Detection Voltage
VZCD
-15
-10
-5
mV
Zero Current Detection
Voltage Delay
tZCDD
0.65
1.35
2.05
µs
RRT=120 kΩ
IS Overcurrent
Detection Voltage
VIS_OCP
-0.62
-0.60
-0.58
V
Restart Timer
tREST
15
30
45
µs
IS = GND
[VS Protection Block]
VS Short Protection
Detection Voltage
VSHORT
0.200
0.300
0.400
V
VS Shortstop Protection
Detection Time
tVS_SH
50
150
300
µs
VS Overvoltage Gain Increase
Voltage
VOVP
1.025 x
VAMP
1.050 x
VAMP
1.075 x
VAMP
V
VS Overvoltage Protection
Detection Voltage 1
VOVP1
1.075 x
VAMP
1.090 x
VAMP
1.105 x
VAMP
V
VS rise
VS Overvoltage Protection
Detection Voltage 2
VOVP2
1.020 x
VAMP
1.040 x
VAMP
1.060 x
VAMP
V
VS drop
VS Overvoltage Protection
Detection Voltage Hysteresis
VHYS
0.030 x
VAMP
0.050 x
VAMP
0.070 x
VAMP
V
VS Low Voltage
Gain Increase Voltage
VGUP
0.840 x
VAMP
0.900 x
VAMP
0.960 x
VAMP
V
[OVP Block]
OVP Detection Voltage 1
VOVP3
2.6
2.7
2.8
V
OVP rise
OVP Detection Voltage 2
VOVP4
2.5
2.6
2.7
V
OVP drop
OVP Detect Time
tOVP3
20
60
150
µs
[OUT Block]
OUT H Voltage
VPOUTH
10.8
12.0
13.2
V
OUT=-20 mA
OUT L Voltage
VPOUTL
-
-
1.00
V
OUT=+20 mA
OUT Pull-down Resistance
RPDOUT
75
100
125
11/22
BD7692FJ
TSZ02201-0F2F0A200320-1-2
© 2018 ROHM Co., Ltd. All rights reserved.
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TSZ22111 15 001
Typical Performance Curves
(Reference data)
Figure 13. VCC UVLO Voltage1 Figure 14. Gm Amplifier Reference Voltage1
vs Temperature vs Temperature
Figure 15. Gm Amplifier Reference Voltage1 Figure 16. IS Overcurrent Detection Voltage
vs VCC Supply Voltage vs Temperature
12/22
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TSZ02201-0F2F0A200320-1-2
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TSZ22111 15 001
Typical Performance Curves - continued
Figure 17. Zero Current Detection Voltage Figure 18. OUT H Voltage vs VCC Supply Voltage
vs Temperature
Figure 19. Off Threshold Voltage vs Temperature Figure 20. Gm Amplifier Trans Conductance vs Temperature
13/22
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TSZ02201-0F2F0A200320-1-2
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TSZ22111 15 001
Timing Chart
The startup sequence is shown below.
Figure 21. Startup Sequence
VOUT
VCC
EO
ACIN
12V
OUT
90% of
setting voltage
Forced
discharge
14/22
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TSZ02201-0F2F0A200320-1-2
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TSZ22111 15 001
Application Example
D5
GND
M1
CVS
CEO1
VOUT
GND
CO
D1
L
N
F1L1
C1
DZ1
0.47 μF
1000 pF
1000 pF
220 μF
RVSL
RGS1
10 kΩCOVP
C5
1 μF
TH1
10 kΩ
DOUT
ROUTE
100 Ω
CEO2
0.1 μFREO
10 kΩ
RRT
120 kΩ
C2
C3
C4
EO
VS
RT
OVP
VCC
OUT
GND
IS
RIS
0.1 Ω
RISF
CISF
100 Ω
1000 pF ROVPL
10 kΩ
ROVPH1
1.5 MΩ
ROUT
15 Ω
GND
CVCC
47 μF
RVSH1
1.5 MΩ
RVSH2
82 kΩ
ROVPH2
82 kΩ
250 μH
VCC
BD7692FJ
L2
U1
Figure 22. Application Example
15/22
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TSZ22111 15 001
Application Example continued
1 Output Voltage Setting
The output voltage is decided in resistor value of RVSH and RVSL.
 󰇡 
󰇢  󰇡 
 󰇢  [V]
Where:
 is the high side resister value of output feedback line.
 is the low side resister value of output feedback line.
 is the Gm Amplifier Reference Voltage 1
2 Decision of Minimum Frequency fSW
The switching frequency of PFC
 
 
 [V]
Where:
 is the input voltage.
is the inductance.
 is the maximum output power.
 is the efficiency.
The frequency is minimized in the minimum input voltage. Slow frequency is effective about loss and noise. However, it is
necessary to make inductance large when frequency is too slow. In addition, it enters the audible band when frequency
lowers to 20 kHz or less, and sound banging occurs. It designs the minimum frequency as 50 kHz this time.
3 Calculation of the Inductance

 
 [V]
e.g. VIN=AC90 V, VOUT=400 V, PO_PFC=200 W, η_PFC=0.9, fSW=50 kHz
 [μH]
4 Calculation of the Inductor Current
 
 
 [A]
5 Calculation of the ON Width
 
[s]
ON width is short at the high AC voltage. Therefore, the ON width is decided with the minimum AC voltage.
It recommends RT setting such as the maximum ON width is just covered at the minimum AC voltage when an AC input
voltage range is wide. ON width is short when the high AC voltage. And the EO voltage range is small. EO voltage band
width is the large then the ON width setting by the RT resistance is short.
6 VCC External Capacitor
The VCC pin can reduce VCC voltage change at the time of the switching by attaching capacitor.
This IC drives gate capacitor of the external MOSFET by the OUT pin. The VCC capacitor recommends electric field
capacitor 10 µF or more withstand pressure 35 V or more.
When the OUT pin outputs H, the gate capacitor charge current of the MOSFET flows from VCC in the OUT pin direction.
When there is not VCC capacitor, the VCC voltage descends. The VCC voltage descent may become the factor of a
switching stop by the VCCUVLO detection and the unstable operation. In order to avoid this, VCC capacitor is necessary.
The VCC voltage descent depends on external MOSFET, operation frequency (output load) and the AC voltage.
Please confirm whether there is not VCC voltage descent which causes the VCCUVLO false detection at the time of
MOSFET drive under the assumed situation with an actual board.
16/22
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© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
www.rohm.com.
TSZ22111 15 001
Attention in the Board Design
About parts placement
Please locate the parts in the Figure 23 inside dot line near the IC. In addition, please do parts placement to avoid the
interference with switching lines and high current lines such as inductor, DRAIN.
D5
GND
M1
CVS
CEO1
VOUT
GND
CO
D1
L
N
F1L1
C1
DZ1
0.47 μF
1000 pF
1000 pF
220 μF
RVSL
RGS1
10 kΩCOVP
C5
1 μF
TH1
10 kΩ
DOUT
ROUTE
100 Ω
CEO2
0.1 μFREO
10 kΩ
RRT
120 kΩ
C2
C3
C4
EO
VS
RT
OVP
VCC
OUT
GND
IS
RIS
0.1 Ω
RISF
CISF
100 Ω
1000 pF ROVPL
10 kΩ
ROVPH1
1.5 MΩ
ROUT
15 Ω
GND
CVCC
47 μF
RVSH1
1.5 MΩ
RVSH2
82 kΩ
ROVPH2
82 kΩ
250 μH
VCC
BD7692FJ
L2
U1
Figure 23. Parts Placement
About GND wiring guidance
The red line of Figure 24 is the GND lines which large current flows. Each line independence wires it, and please wire it short
and thickly. A blue line is ICGND. Please make a common use ICGND and GND of IC around parts.
D5
GND
M1
CVS
CEO1
VOUT
GND
CO
D1
L
N
F1L1
C1
DZ1
0.47 μF
1000 pF
1000 pF
220 μF
RVSL
RGS1
10 kΩCOVP
C5
1 μF
TH1
10 kΩ
DOUT
ROUTE
100 Ω
CEO2
0.1 μFREO
10 kΩ
RRT
120 kΩ
C2
C3
C4
EO
VS
RT
OVP
VCC
OUT
GND
IS
RIS
0.1 Ω
RISF
CISF
100 Ω
1000 pF ROVPL
10 kΩ
ROVPH1
1.5 MΩ
ROUT
15 Ω
GND
CVCC
47 μF
RVSH1
1.5 MΩ
RVSH2
82 kΩ
ROVPH2
82 kΩ
250 μH
VCC
BD7692FJ
L2
U1
Figure 24. GND Line Layout
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© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
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TSZ22111 15 001
Attention in the Board - continued
About large current line
Large circuit current flows through the part of the red line of Figure 25. Please wire it short and thickly. Do not place IC and
high impedance line near the red line because it has large noise.
D5
GND
M1
CVS
CEO1
VOUT
GND
CO
D1
L
N
F1L1
C1
DZ1
0.47 μF
1000 pF
1000 pF
220 μF
RVSL
RGS1
10 kΩCOVP
C5
1 μF
TH1
10 kΩ
DOUT
ROUTE
100 Ω
CEO2
0.1 μFREO
10 kΩ
RRT
120 kΩ
C2
C3
C4
EO
VS
RT
OVP
VCC
OUT
GND
IS
RIS
0.1 Ω
RISF
CISF
100 Ω
1000 pF ROVPL
10 kΩ
ROVPH1
1.5 MΩ
ROUT
15 Ω
GND
CVCC
47 μF
RVSH1
1.5 MΩ
RVSH2
82 kΩ
ROVPH2
82 kΩ
250 μH
VCC
BD7692FJ
L2
U1
Figure 25. High Current Line Layout
I/O Equivalence Circuits
1VS 2EO 3RT 4OVP
5IS 6GND 7OUT 8VCC
Internal Reg Internal Reg Internal Reg
Internal Reg
Internal Reg2
Internal Reg
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© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
www.rohm.com.
TSZ22111 15 001
Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the ICs power
supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3. Ground Voltage
Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a
voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
6. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
7. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
8. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
9. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
www.rohm.com.
TSZ22111 15 001
Operational Notes - continued
10. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 26. Example of monolithic IC structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
12. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
13. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
N N
P+PN N
P+
P Substrate
GND
NP+N N
P+
NP
P Substrate
GND GND
Parasitic
Elements
Pin A
Pin A
Pin B Pin B
B C
EParasitic
Elements
GND
Parasitic
Elements
CB
E
Transistor (NPN)Resistor
N Region
close-by
Parasitic
Elements
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© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
www.rohm.com.
TSZ22111 15 001
Ordering Information
B
D
7
6
9
2
F
J
-
E2
Package
FJ: SOP-J8
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagrams
SOP-J8(TOP VIEW)
D 7 6 9 2
Part Number Marking
LOT Number
Pin 1 Mark
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© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
www.rohm.com.
TSZ22111 15 001
Physical Dimension and Packing Information
Package Name
SOP-J8
22/22
BD7692FJ
TSZ02201-0F2F0A200320-1-2
© 2018 ROHM Co., Ltd. All rights reserved.
04.Oct.2018 Rev.001
www.rohm.com.
TSZ22111 15 001
Revision History
Date
Revision
Changes
04.Oct.2018
001
Release
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (Specific Applications), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHMs Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASS
CLASS
CLASSb
CLASS
CLASS
CLASS
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or
concerning such information.