Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage VRRM 1600 V Durchlastrom Grenzeffektivwert RMS forward current per chip I FRMSM 60 A Id 75 A I FSM 500 A Dauergleichstrom DC forward current TC = 80C Stostrom Grenzwert tP = 10 ms, Tvj = surge forward current tP = 10 ms, Tvj = 150C Grenzlastintegral tP = 10 ms, Tvj = 2 I t - value 25C 400 A 1250 As 800 As 600 V I C,nom. 75 A IC 100 A I CRM 150 A Ptot 310 W VGES +/- 20V V IF 75 A I FRM 150 A I 2t 920 A2s VCES 600 V TC = 80 C I C,nom. 37,5 A TC = 25 C IC 50 A 2 25C I t tP = 10 ms, Tvj = 150C 2 2 Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES Kollektor-Dauergleichstrom DC-collector current Tc = 70 C TC = 25 C Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25C TC = 70 C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Tc = 70 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral I 2t - value VR = 0V, tp = 10ms, Tvj = 125C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C I CRM 75 A Gesamt-Verlustleistung total power dissipation TC = 25C Ptot 180 W VGES +/- 20V V IF 17,5 A I FRM 35 A Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Tc = 70 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Andreas Schulz date of publication:29.03.2001 approved by: Robert Severin revision: 5 1(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 1,15 - V Tvj = 150C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150C rT - - 6,5 m Sperrstrom reverse current Tvj = 150C, IR - 3 - mA Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip TC = 25C RAA'+CC' - 4 - m min. typ. max. - 1,95 2,45 V - 2,2 - V VGE(TO) 4,5 5,5 6,5 V Cies - 3,3 - nF Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Tvj = 150C, Schleusenspannung threshold voltage IF = 75 A VR = 1600 V Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 75 A IC = 75 A IC = 1,5 mA Gate-Schwellenspannung gate threshold voltage VCE = VGE, Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, VCE = 600 V VGE = 0V, Tvj =125C, VCE = 600 V Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Tvj = 25C, VCE = 0V, VGE =20V, Tvj =25C I C = INenn, VCC = 18 Ohm VGE = 15V, Tvj = 125C, RG = 18 Ohm I C = INenn, 300 V VGE = 15V, Tvj = 25C, RG = 18 Ohm VGE = 15V, Tvj = 125C, RG = 18 Ohm I C = INenn, 300 V VCC = VGE = 15V, Tvj = 25C, RG = 18 Ohm VGE = 15V, Tvj = 125C, RG = 18 Ohm I C = INenn, 300 V VCC = VGE = 15V, Tvj = 25C, RG = 18 Ohm VGE = 15V, Tvj = 125C, RG = 18 Ohm I C = INenn, 300 V VCC = VGE = 15V, Tvj = 125C, RG = I C = INenn, 50 nH VCC = 300 V LS = Kurzschluverhalten SC Data 18 Ohm LS = VGE = 15V, Tvj = 125C, RG = I CES - 3,0 500 A - 4,0 - mA I GES - - 300 nA td,on - 70 - ns - 70 - ns - 65 - ns - 70 - ns 300 V VGE = 15V, Tvj = 25C, RG = VCC = VCE sat 18 Ohm tr td,off - 310 - ns - 345 - ns - 30 - ns - 55 - ns Eon - 2,8 - mWs Eoff - 3 - mWs I SC - 300 - A tf 50 nH tP 10s, VGE 15V, RG = Tvj125C, VCC = 360 V dI/dt = 3500 A/s 18 Ohm 2(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip TC = 25C Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage VGE = 0V, Tvj = 25C, IF = 75 A VGE = 0V, Tvj = 125C, IF = 75 A Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy I F=INenn, - diF/dt = 300 V VGE = -10V, Tvj = 125C, VR = 300 V I F=INenn, 1500A/s VGE = -10V, Tvj = 25C, VR = 300 V VGE = -10V, Tvj = 125C, VR = 300 V I F=INenn, 1500A/s - diF/dt = VGE = -10V, Tvj = 25C, VR = 300 V VGE = -10V, Tvj = 125C, VR = 300 V Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 37,5 A IC = 37,5 A IC = 0,7 mA Gate-Schwellenspannung gate threshold voltage VCE = VGE, Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, VCE = 600 V VGE = 0V, Tvj = 125C, VCE = 600 V Gate-Emitter Reststrom gate-emitter leakage current Tvj = 25C, VCE = 0V, VGE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, 37,5 A IF = 37,5 A TC = 25C Abweichung von R100 deviation of R100 TC = 100C, R100 = 493 Verlustleistung power dissipation TC = 25C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] max. LCE - - 100 nH RCC'+EE' - 7 - m min. typ. max. - 1,25 1,7 V - 1,2 - V - 48 - A - 62 - A - 4,5 - As - 7,3 - As VF I RM Qr ERQ - 1 - mWs - 1,5 - mWs min. typ. max. - 2,2 2,85 V - 2,5 - V VGE(TO) 4,5 5,5 6,5 V Cies - 1,6 - nF VCE sat I CES - 1,0 500 A - 1,2 - mA - - 300 nA min. typ. max. - 1,6 1,95 V - 1,65 - V min. typ. max. R25 - 5 - k R/R -5 5 % 20 mW I GES IF = NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance typ. 1500A/s VGE = -10V, Tvj = 25C, VR = - diF/dt = min. VF P25 B25/50 3375 K 3(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case RthJC Gleichr. Diode/ Rectif. Diode min. typ. max. - - 0,65 K/W Trans. Wechsr./ Trans. Inverter - - 0,4 K/W Diode Wechsr./ Diode Inverter - - 0,7 K/W Trans. Bremse/ Trans. Brake - - 0,7 K/W Diode Bremse/ Diode Brake - - 1,8 K/W - 0,04 - K/W - 0,02 - K/W - 0,04 - K/W Ubergangs-Warmewiderstand Gleichr. Diode/ Rectif. Diode Paste=1W/m*K thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter grease=1W/m*K RthCK Diode Wechsr./ Diode Inverter Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 M Anzugsdrehmoment f. mech. Befestigung mounting torque 3 Nm 10% Gewicht weight G 300 g 4(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) IC = f (VCE) VGE = 15 V 140 120 Tj = 25C Tj = 125C IC [A] 100 80 60 40 20 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) Tvj = 125C 140 VGE = 20V VGE = 15V 120 VGE = 12V VGE = 10V IC [A] 100 VGE = 9V 80 60 40 20 0 0 0,5 1 1,5 2 2,5 3 3,5 VCE [V] 5(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Ubertragungscharakteristik Wechselr. (typisch) IC = f (VGE) Transfer characteristic Inverter (typical) VCE = 20 V 140 120 Tj = 25C 100 IC [A] Tj = 125C 80 60 40 20 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) IF = f (VF) 140 120 Tj = 25C 100 IF [A] Tj = 125C 80 60 40 20 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 VF [V] 6(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) Tj = 125C, VGE = 15 V, VCC = RGon = RGoff = 300 V 18 Ohm 9 8 Eon 7 Eoff Erec E [mWs] 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, VGE = +-15 V , Ic = Inenn , VCC = 300 V 5 4,5 Eon Eoff 4 Erec E [mWs] 3,5 3 2,5 2 1,5 1 0,5 0 0 5 10 15 20 25 30 35 RG [ ] 7(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter ZthJC = f (t) 1 Zth-IGBT ZthJC [K/W] Zth-FWD 0,1 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE) Reverse bias save operating area Inverter (RBSOA) Tvj = 125C, VGE = 15V, RG = 18 Ohm 160 140 120 IC,Modul 100 IC [A] IC,Chip 80 60 40 20 0 0 100 200 300 400 500 600 700 VCE [V] 8(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) IC = f (VCE) VGE = 15 V 70 60 Tj = 25C Tj = 125C IC [A] 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 70 60 Tj = 25C 50 IF [A] Tj = 125C 40 30 20 10 0 0 0,5 1 1,5 2 2,5 VF [V] 9(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) IF = f (VF) 140 120 100 Tj = 25C IF [A] Tj = 150C 80 60 40 20 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 120 140 160 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[ ] 10000 1000 100 0 20 40 60 80 100 TC [C] 10(11) http://store.iiic.cc/ DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Schaltplan/ Circuit diagram 21 8 22 20 1 2 3 23 19 7 14 18 13 4 12 24 9 16 17 5 15 6 NTC 11 10 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. 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