BSM75GP60 - Infineon Technologies [EUPEC]

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Diode Gleichrichter/ Diode Rectifier

Periodische Rückw. Spitzensperrspannung

repetitive peak reverse voltage VRRM 1600 V

Durchlaßstrom Grenzeffektivwert

RMS forward current per chip IFRMSM 60 A

Dauergleichstrom

DC forward current TC = 80°C Id75 A

Stoßstrom Grenzwert tP = 10 ms, Tvj = 25°C IFSM 500 A

surge forward current tP = 10 ms, Tvj = 150°C 400 A

Grenzlastintegral tP = 10 ms, Tvj = 25°C I2t1250 A2s

I2t - value tP = 10 ms, Tvj = 150°C 800 A2s

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter-Sperrspannung

collector-emitter voltage VCES 600 V

Kollektor-Dauergleichstrom Tc = 70 °C IC,nom. 75 A

DC-collector current TC = 25 °C IC100 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 70 °C ICRM 150 A

Gesamt-Verlustleistung

total power dissipation TC = 25°C Ptot 310 W

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Diode Wechselrichter/ Diode Inverter

Dauergleichstrom

DC forward current Tc = 70 °C IF75 A

Periodischer Spitzenstrom

repetitive peak forw. current tP = 1 ms IFRM 150 A

Grenzlastintegral

I2t - value VR = 0V, tp = 10ms, Tvj = 125°C I2t920 A2s

Transistor Brems-Chopper/ Transistor Brake-Chopper

Kollektor-Emitter-Sperrspannung

collector-emitter voltage VCES 600 V

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 37,5 A

DC-collector current TC = 25 °C IC50 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 75 A

Gesamt-Verlustleistung

total power dissipation TC = 25°C Ptot 180 W

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Diode Brems-Chopper/ Diode Brake-Chopper

Dauergleichstrom

DC forward current Tc = 70 °C IF17,5 A

Periodischer Spitzenstrom

repetitive peak forw. current tP = 1 ms IFRM 35 A

prepared by: Andreas Schulz date of publication:29.03.2001

approved by: Robert Severin revision: 5

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

Modul Isolation/ Module Isolation

Isolations-Prüfspannung

insulation test voltage RMS, f = 50 Hz, t = 1 min.

NTC connected to Baseplate VISOL 2,5 kV

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Diode Gleichrichter/ Diode Rectifier min. typ. max.

Durchlaßspannung

forward voltage Tvj = 150°C, IF = 75 A VF-1,15 -V

Schleusenspannung

threshold voltage Tvj = 150°C V(TO) - - 0,8 V

Ersatzwiderstand

slope resistance Tvj = 150°C rT- - 6,5 mΩ

Sperrstrom

reverse current Tvj = 150°C, VR

=

1600 V IR-3-mA

Modul Leitungswiderstand, Anschlüsse-Chip

lead resistance, terminals-chip TC = 25°C RAA'+CC' - 4-mΩ

Transistor Wechselrichter/ Transistor Inverter min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 75 A VCE sat -1,95 2,45 V

collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 75 A -2,2 -V

Gate-Schwellenspannung

gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 1,5 mA VGE(TO) 4,5 5,5 6,5 V

Eingangskapazität

input capacitance f = 1MHz, Tvj = 25°C

VCE = 25 V, VGE = 0 V Cies -3,3 -nF

Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 600 V ICES -3,0 500 µA

collector-emitter cut-off current VGE = 0V, Tvj =125°C, VCE = 600 V -4,0 -mA

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 300 nA

Einschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 300 V

turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 18 Ohm td,on -70 -ns

VGE = ±15V, Tvj = 125°C, RG = 18 Ohm -70 -ns

Anstiegszeit (induktive Last) IC = INenn, VCC = 300 V

rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 18 Ohm tr-65 -ns

VGE = ±15V, Tvj = 125°C, RG = 18 Ohm -70 -ns

Abschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 300 V

turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 18 Ohm td,off -310 -ns

VGE = ±15V, Tvj = 125°C, RG = 18 Ohm -345 -ns

Fallzeit (induktive Last) IC = INenn, VCC = 300 V

fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 18 Ohm tf-30 -ns

VGE = ±15V, Tvj = 125°C, RG = 18 Ohm -55 -ns

Einschaltverlustenergie pro Puls IC = INenn, VCC = 300 V

turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 18 Ohm Eon -2,8 -mWs

LS = 50 nH

Abschaltverlustenergie pro Puls IC = INenn, VCC = 300 V

turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 18 Ohm Eoff -3-mWs

LS = 50 nH

Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 18 Ohm

SC Data Tvj≤125°C, VCC =360 V ISC -300 -A

dI/dt = 3500 A/µs

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values min. typ. max.

Modulinduktivität

stray inductance module LσCE - -100 nH

Modul Leitungswiderstand, Anschlüsse-Chip

lead resistance, terminals-chip TC = 25°C RCC'+EE' - 7-mΩ

Diode Wechselrichter/ Diode Inverter min. typ. max.

Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 75 A VF-1,25 1,7 V

forward voltage VGE = 0V, Tvj = 125°C, IF = 75 A -1,2 -V

Rückstromspitze IF=INenn, - diF/dt = 1500A/µs

peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 300 V IRM -48 -A

VGE = -10V, Tvj = 125°C, VR = 300 V -62 -A

Sperrverzögerungsladung IF=INenn, - diF/dt = 1500A/µs

recovered charge VGE = -10V, Tvj = 25°C, VR = 300 V Qr-4,5 -µAs

VGE = -10V, Tvj = 125°C, VR = 300 V -7,3 -µAs

Abschaltenergie pro Puls IF=INenn, - diF/dt = 1500A/µs

reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 300 V ERQ -1-mWs

VGE = -10V, Tvj = 125°C, VR = 300 V -1,5 -mWs

Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 37,5 A VCE sat -2,2 2,85 V

collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 37,5 A -2,5 -V

Gate-Schwellenspannung

gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,7 mA VGE(TO) 4,5 5,5 6,5 V

Eingangskapazität

input capacitance f = 1MHz, Tvj = 25°C

VCE = 25 V, VGE = 0 V Cies -1,6 -nF

Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 600 V ICES -1,0 500 µA

collector-emitter cut-off current VGE = 0V, Tvj = 125°C, VCE = 600 V -1,2 -mA

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 300 nA

Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max.

Durchlaßspannung Tvj = 25°C, IF = 37,5 A VF-1,6 1,95 V

forward voltage Tvj = 125°C, IF = 37,5 A -1,65 -V

NTC-Widerstand/ NTC-Thermistor min. typ. max.

Nennwiderstand

rated resistance TC = 25°C R25 -5-kΩ

Abweichung von R100

deviation of R100 TC = 100°C, R100 = 493 Ω∆R/R -5 5%

Verlustleistung

power dissipation TC = 25°C P25 20 mW

B-Wert

B-value R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

Thermische Eigenschaften / Thermal properties min. typ. max.

Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 0,65 K/W

thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 0,4 K/W

Diode Wechsr./ Diode Inverter - - 0,7 K/W

Trans. Bremse/ Trans. Brake - - 0,7 K/W

Diode Bremse/ Diode Brake - - 1,8 K/W

Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode λPaste=1W/m*K RthCK -0,04 -K/W

thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter λgrease=1W/m*K -0,02 -K/W

Diode Wechsr./ Diode Inverter -0,04 -K/W

Höchstzulässige Sperrschichttemperatur

maximum junction temperature Tvj - - 150 °C

Betriebstemperatur

operation temperature Top -40 -125 °C

Lagertemperatur

storage temperature Tstg -40 -125 °C

Mechanische Eigenschaften / Mechanical properties

Innere Isolation

internal insulation Al2O3

CTI

comperative tracking index 225

Anzugsdrehmoment f. mech. Befestigung M3Nm

mounting torque ±10%

Gewicht

weight G300 g

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

IC [A]

VCE [V]

IC [A]

VCE [V]

Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)

Output characteristic Inverter (typical) VGE = 15 V

0

20

40

60

80

100

120

140

00,5 11,5 22,5 33,5 44,5 5

Tj = 25°C

Tj = 125°C

0

20

40

60

80

100

120

140

00,5 11,5 22,5 33,5 44,5 5

VGE = 20V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 9V

Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)

Output characteristic Inverter (typical) Tvj = 125°C

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

IC [A]

VGE [V]

IF [A]

VF [V]

Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)

Forward characteristic of FWD Inverter (typical)

0

20

40

60

80

100

120

140

0 2 4 6 8 10 12 14

Tj = 25°C

Tj = 125°C

Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)

Transfer characteristic Inverter (typical) VCE = 20 V

0

20

40

60

80

100

120

140

00,2 0,4 0,6 0,8 11,2 1,4 1,6

Tj = 25°C

Tj = 125°C

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

300 V

18 Ohm

E [mWs]

IC [A]

300 V

E [mWs]

RG [Ω]

Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC =

Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff =

0

1

2

3

4

5

6

7

8

9

0 20 40 60 80 100 120 140 160

Eon

Eoff

Erec

0

0,5

1

1,5

2

2,5

3

3,5

4

4,5

5

0 5 10 15 20 25 30 35

Eon

Eoff

Erec

Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)

Switching losses Inverter (typical) Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC =

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

ZthJC [K/W]

t [s]

18 Ohm

IC [A]

VCE [V]

Transienter Wärmewiderstand Wechselr. ZthJC = f (t)

Transient thermal impedance Inverter

0,01

0,1

1

0,001 0,01 0,1 1 10

Zth-IGBT

Zth-FWD

Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)

Reverse bias save operating area Inverter (RBSOA) Tvj = 125°C, VGE = ±15V, RG =

0

20

40

60

80

100

120

140

160

0 100 200 300 400 500 600 700

IC,Modul

IC,Chip

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

IC [A]

VCE [V]

IF [A]

VF [V]

0

10

20

30

40

50

60

70

00,5 11,5 22,5 33,5 44,5

Tj = 25°C

Tj = 125°C

Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)

Forward characteristic of brake-chopper-FWD (typical)

Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE)

Output characteristic brake-chopper-IGBT (typical) VGE = 15 V

0

10

20

30

40

50

60

70

00,5 11,5 22,5

Tj = 25°C

Tj = 125°C

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

IF [A]

VF [V]

R[Ω]

TC [°C]

Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)

Forward characteristic of Rectifier Diode (typical)

0

20

40

60

80

100

120

140

00,2 0,4 0,6 0,8 11,2 1,4 1,6

Tj = 25°C

Tj = 150°C

NTC- Temperaturkennlinie (typisch) R = f (T)

NTC- temperature characteristic (typical)

Rtyp

100

1000

10000

100000

0 20 40 60 80 100 120 140 160

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM75GP60

Schaltplan/ Circuit diagram

Gehäuseabmessungen/ Package outlines

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine

Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

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NTC

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