DMA150YC1600NA
3
4
2
1
Half 3~ Bridge, Common Cathode
Standard Rectifier
Part number
DMA150YC1600NA
Backside: isolated
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
RRM
1600
I 150
FSM
800
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20180425cData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
DMA150YC1600NA
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.21
R0.6 K/W
R
min.
150
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
95
P
tot
165 WT = 25°C
C
RK/W
50
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.62
T = 25°C
VJ
150
V
F0
V0.87T = °C
VJ
150
r
F
5.6 mΩ
V1.16T = °C
VJ
I = A
F
V
50
1.69
I = A
F
150
I = A
F
150
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
25
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
800
865
2.31
2.25
A
A
A
A
680
735
3.20
3.12
1600
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20180425cData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
DMA150YC1600NA
Ratings
abcdZyyww
XXXXX
Product Marking
Logo
Part No.
DateCode
Assembly Code
Assembly Line
®
D
M
A
150
YC
1600
NA
Part description
Diode
Standard Rectifier
(up to 1800V)
Half 3~ Bridge, Common Cathode
SOT-227B (minibloc)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.5
mounting torque
1.1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm1.5
terminal torque
1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B (minibloc)
Similar Part Package Voltage class
DMA150YA1600NA SOT-227B (minibloc) 1600
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DMA150YC1600NA 509174Tube 10DMA150YC1600NAStandard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V0.87
mΩ
V
0 max
R
0 max
slope resistance *
4.4
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20180425cData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
DMA150YC1600NA
3
4
2
1
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20180425cData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
DMA150YC1600NA
0.001 0.01 0.1 1
300
400
500
600
700
2 3 4 5 6 7 8 9 011
10
2
10
3
10
4
0.5 1.0 1.5 2.0
0
50
100
150
2
0
0
0 10 20 30 40 50 60
0
20
40
60
80
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 25 50 75 100 125 150 175
0
50
100
150
I
F
[A]
V
F
[V]
I
FSM
[A]
t [s]
I
2
t
[A
2
s]
t [ms]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[
K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
t [ms]
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.0240 0.01000
2 0.0160 0.00001
3 0.0500 0.00500
4 0.1800 0.02300
5 0.3300 0.22000
0 25 50 75 100 125 150 175
50 Hz, 80%V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150°C
R
thHA
=
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20180425cData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
