To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique. PACKAGE DIMENSIONS (Units: mm) @f = 1.0 GHz @f = 1.0 GHz 1 3 +0.1 1.2 dB TYP. 13 dB TYP. 2 0.65 -0.15 0.4 -0.05 * NF * Ga 0.95 FEATURES +0.1 1.5 0.95 2.90.2 +0.1 0.4 -0.05 2.80.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) V V V mA mW C C Marking +0.1 0.16 -0.06 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 20 10 1.5 65 200 150 65 to +150 0.3 VCBO VCEO VEBO IC PT Tj Tstg 1.1 to 1.4 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1 V, IE = 0 DC Current Gain hFE * 50 100 Gain Bandwidth Product fT 9 Feed-Back Capacitance Cre ** 0.35 Insertion Power Gain Maximum Available Gain 250 VCE = 8 V, IC = 20 mA GHz pF VCB = 10 V, IE = 0, f = 1.0 MHz 13 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz MAG 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz NF 1.2 dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz S21e2 Noise Figure 11 0.9 VCE = 8 V, IC = 20 mA 2.5 * Pulse Measurement PW 350 s, Duty Cycle 2 % ** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Class R33/Q * R34/R * R35/S * Marking R33 R34 R35 hFE 50 to 100 80 to 160 125 to 250 Document No. P10360EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan * Old Specification / New Specification (c) 1984 2SC3583 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE f = 1.0 MHz 200 Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-W 3 Free air 100 50 0 100 2 1 0.7 0.5 0.3 0.2 150 TA-Ambient Temperature-C 0.1 1 2 3 5 7 10 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 200 30 15 VCE = 8 V |S21e|2-Insertion Gain-dB 100 hFE-DC Current Gain 20 50 20 10 5 VCE = 8 V f = 1.0 GHz 10 0.5 1 5 10 0 0.5 50 IC-Collector Current-mA 50 70 20 VCE = 8 V VCE = 8 V IC = 20 mA 20 MAG-Maximum Available Gain-dB |S21e|2-Insertion Gain -dB fT-Gain Bandwidth Product-MHz 10 INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY 30 2 5 IC-Collector Current-mA GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT 10 7 5 3 2 1 1 1 2 3 5 7 10 IC-Collector Current-mA 20 30 16 MAG |S21e|2 12 8 4 0 0.1 0.2 0.3 0.5 0.7. 1.0 f-Frequency-GHz 2.0 3.0 2SC3583 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 8 V f = 1.0 GHz NF-Noise Figure-dB 6 5 4 3 2 1 0 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 8.0 V, IC = 5.0 mA, ZO = 50 S11 S21 S21 S12 S12 S22 12.107 138.7 0.036 66.2 0.825 8.097 114.2 0.065 61.6 0.675 6.260 102.3 0.079 61.6 0.582 4.623 90.1 0.090 61.2 0.529 4.004 83.6 0.101 61.3 0.500 3.250 75.8 0.125 60.8 0.470 0.176 110.1 131.1 148.9 162.8 3.021 69.4 0.144 60.0 0.448 1600 0.179 173.9 2.575 63.4 0.160 59.8 0.427 1800 0.186 163.3 2.520 58.9 0.188 59.1 0.406 2000 0.211 151.1 2.183 53.4 0.202 58.9 0.386 S21 S21 S12 S12 S22 19.757 116.9 0.033 62.6 0.587 10.502 98.8 0.055 70.6 0.485 7.591 91.1 0.072 74.6 0.453 5.446 82.0 0.095 73.2 0.419 4.653 77.6 0.107 72.1 0.413 f (MHz) 200 0.728 400 0.490 600 0.343 800 0.253 1000 0.202 1200 0.176 1400 S11 45.3 74.5 93.2 S22 21.6 26.6 29.0 28.6 30.1 31.4 33.4 34.8 37.5 44.5 VCE = 8.0 V, IC = 20 mA, ZO = 50 f (MHz) S11 S11 66.8 88.9 200 0.366 400 0.194 600 0.124 800 0.077 1000 0.063 104.3 132.0 156.4 1200 0.065 179.5 3.754 71.6 0.135 72.1 0.392 1400 0.074 168.0 3.460 66.5 0.164 70.1 0.369 1600 0.108 147.0 2.934 61.9 0.178 69.6 0.347 1800 0.116 137.6 2.870 58.2 0.205 66.3 0.333 2000 0.134 131.2 2.479 53.4 0.221 64.0 0.312 S22 22.5 23.8 24.3 23.2 24.2 26.4 29.9 32.2 34.3 42.1 3 2SC3583 S-PARAMETER VCE = 8 V 200 MHz Step 1.4 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 600 1.6 0.6 12 0.1 6 0.3 4 70 1.2 0.9 0.8 0.15 0.35 T EN 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 1.0 0 1. 6.0 0.3 0.6 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 0.9 1.0 0.7 0.8 0.6 0.4 20 0.27 0.23 0.2 GHz 8 1. ( 0.8 0.2 GHz 0.6 E IV AT 0 3. 0 -4 4 0. NE G 0.4 2.0 1.8 3 0.3 7 4 0.3 6 0.1 0.2 1.6 0 1.4 -6 0.35 0.15 -70 1.2 0.1 0.36 0.14 -80 1.0 18 0.9 32 -90 0.37 0.13 0.38 0.12 0.8 0. 0.7 0 0.39 0.11 -100 0 -11 0.40 0.10 0.4 0.0 2 8 0 -1 2 0.4 1 0.0 9 0. 4 0. 3 07 30 -1 0.6 -5 0. 0. 5 0. 0. 31 19 VCE = 8 V 0 . 2 9 0.2 1 0.3 -3 0.2 0 0 0 E NC TA X AC -J--O- RE -Z 1.0 4.0 ) S11e 5.0 0 IC = 5 mA 0.2 8 0.2 2 -20 0. S12e-FREQUENCY 90 CONDITION 120 60 VCE = 8 V 2.0 GHz 90 120 0.2 GHz -10 10 0.3 1.2 50 20 0.1 0.2 0.2 0.5 0.4 WAVELE NG 0.2 0.8 IC = 20 mA 0.6 0.26 0.24 2.0 GHz 0.4 IC = 5 mA 0.2 S21e-FREQUENCY CONDITION 50 0.25 0.25 ) 20 S22e 0 ( 0.1 0.3 10 2.0 GHz IC = 20 mA REACTANCE COMPONENT R ---- 0.2 ZO 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( -Z-+-J-XTANCE CO ) MPO 0.4 0 0.2 0 0.3 N 0. 5 2.0 50 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE -1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 -1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. -1 EA CO C 0 0.14 0.36 80 90 19 0. 31 0. 07 43 0. 0 13 0. 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.7 8 0.0 2 0.4 9 0.0 1 0.4 1.0 S11e, S22e-FREQUENCY CONDITION 60 IC = 20 mA IC = 20 mA 150 30 150 30 IC = 5 mA IC = 5 mA S12e 0.2 GHz 0.2 GHz 180 0 4 8 12 16 0 180 20 0 0 0.04 0.08 0.12 0.16 0.20 S21e -150 -30 -60 -120 -90 4 -150 -30 -60 -120 -90 2SC3583 [MEMO] 5 2SC3583 [MEMO] 6 2SC3583 [MEMO] 7 2SC3583 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5