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DATA SHEET
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1984©
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
• NF 1.2 dB TYP. @f = 1.0 GHz
• Ga 13 dB TYP. @f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC65 mA
Total Power Dissipation PT200 mW
Junction Temperature Tj150
C
Storage Temperature Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0
AV
CB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0
AV
EB = 1 V, IE = 0
DC Current Gain hFE * 50 100 250 VCE = 8 V, IC = 20 mA
Gain Bandwidth Product fT9 GHz VCE = 8 V, IC = 20 mA
Feed-Back Capacitance Cre ** 0.35 0.9 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e
211 13 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain MAG 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.2 2.5 dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz
* Pulse Measurement PW
350
s, Duty Cycle
2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class R33/Q * R34/R * R35/S *
Marking R33 R34 R35
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
13
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.21.1 to 1.4
0 to 0.1
0.950.3 0.95 0.4
+0.1
−0.05
0.4
+0.1
−0.05
0.16
+0.1
−0.06
0.65
+0.1
−0.15
2
2SC3583
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1 5 10 500.5
100 150
TA-Ambient Temperature-°C
IC-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
PT-Total Power Dissipation-W
hFE-DC Current Gain
VCE = 8 V
0
5
10
15
0.5 1 5 10 50 70
IC-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S21e|2-Insertion Gain-dB
VCE = 8 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
13257102030
V
CB-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Cre-Feed-back Capacitance-pF
f = 1.0 MHz
0
12
8
4
16
20
0.1 0.30.2 0.5 0.7. 1.0 2.0 3.0
f-Frequency-GHz
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
MAG-Maximum Available Gain-dB
|S21e|2-Insertion Gain -dB
VCE = 8 V
IC = 20 mA
1
5
3
2
7
10
30
20
13257102030
I
C-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
fT-Gain Bandwidth Product-MHz
VCE = 8 V
Free air
|S21e|2
MAG
3
2SC3583
0
2
1
5
4
3
7
6
0.5 1 5 10 50 70
IC-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
VCE = 8 V
f = 1.0 GHz
S-PARAMETER
VCE = 8.0 V, IC = 5.0 mA, ZO = 50
f (MHz)
S11
S11
S21
S21
S12
S12
S22
S22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.728
0.490
0.343
0.253
0.202
0.176
0.176
0.179
0.186
0.211
45.3
74.5
93.2
110.1
131.1
148.9
162.8
173.9
163.3
151.1
12.107
8.097
6.260
4.623
4.004
3.250
3.021
2.575
2.520
2.183
138.7
114.2
102.3
90.1
83.6
75.8
69.4
63.4
58.9
53.4
0.036
0.065
0.079
0.090
0.101
0.125
0.144
0.160
0.188
0.202
66.2
61.6
61.6
61.2
61.3
60.8
60.0
59.8
59.1
58.9
0.825
0.675
0.582
0.529
0.500
0.470
0.448
0.427
0.406
0.386
21.6
26.6
29.0
28.6
30.1
31.4
33.4
34.8
37.5
44.5
VCE = 8.0 V, IC = 20 mA, ZO = 50
f (MHz)
S11
S11
S21
S21
S12
S12
S22
S22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.366
0.194
0.124
0.077
0.063
0.065
0.074
0.108
0.116
0.134
66.8
88.9
104.3
132.0
156.4
179.5
168.0
147.0
137.6
131.2
19.757
10.502
7.591
5.446
4.653
3.754
3.460
2.934
2.870
2.479
116.9
98.8
91.1
82.0
77.6
71.6
66.5
61.9
58.2
53.4
0.033
0.055
0.072
0.095
0.107
0.135
0.164
0.178
0.205
0.221
62.6
70.6
74.6
73.2
72.1
72.1
70.1
69.6
66.3
64.0
0.587
0.485
0.453
0.419
0.413
0.392
0.369
0.347
0.333
0.312
22.5
23.8
24.3
23.2
24.2
26.4
29.9
32.2
34.3
42.1
4
2SC3583
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
0060
70
80
90
100
110
120
130
140
150
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02
0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
––––
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
––––
Z
O
)
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
−JX
––––
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S11e, S22e-FREQUENCY
S21e-FREQUENCY
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
40 8 12 16 20
S21e
0.2 GHz
0.2 GHz
IC = 5 mA
IC = 20 mA
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
0.040 0.08 0.12 0.16 0.20
S12e
2.0 GHz
IC = 20 mA
IC = 5 mA
S12e-FREQUENCY
VCE = 8 V
200 MHz Step
CONDITION
VCE = 8 VCONDITION VCE = 8 VCONDITION
2.0 GHz
2.0 GHz
0.2 GHz
0.2 GHz
IC = 20 mA
IC = 5 mA
IC = 5 mA
S11e
S22e
IC = 20 mA
0.2 GHz
5
2SC3583
[MEMO]
6
2SC3583
[MEMO]
7
2SC3583
[MEMO]
2SC3583
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
