TC7MZ4051,4052,4053FK
2007-10-19
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7MZ4051FK,TC7MZ4052FK,TC7MZ4053FK
TC7MZ4051FK 8-Channel Analog Multiplexer/Demultiplexer
TC7MZ4052FK Dual 4-Channel Analog Multiplexer/Demultiplexer
TC7MZ4053FK Triple 2-Channel Analog
Multiplexer/Demultiplexer
The TC7MZ4051/4052/4053FK are high-speed, low-voltage
drive analog multiplexer/demultiplexers using silicon gate CMOS
technology. In 3 V and 5 V systems these can achieve high-speed
operation with the low power dissipation that is a feature of
CMOS.
The TC7MZ4051/4052/4053FK offer analog/digital signal
selection as well as mixed signals. The 4051 has an 8-channel
configuration, the 4052 has an 4-channel × 2 configuration, and
the 4053 has a 2-channel × 3 configuration.
The switches for each channel are turned ON by the control pin digital signals.
Although the control signal logical amplitude (VCC GND) is small, the device can perform large-amplitude
(VCC VEE) signal switching.
For example, if VCC = 3 V, GND = 0 V, and VEE = 3 V, signals between 3 V and +3 V can be switched from the
logical circuit using a single 3 V power supply.
All input pins are equipped with a newly developed input protection circuit that avoids the need for a diode on
the plus side (forward side from the input to the VCC). As a result, for example, 5 V signals can be permitted on the
inputs even when the power supply voltage to the circuits is off. As a result of this input power protection, the
TC7MZ4051/4052/4053FK can be used in a variety of applications, including in the system which has two power
supplies, and in battery backup circuits.
Features
Low ON resistance: Ron = 22 (typ.) (VCC VEE = 3 V)
R
on = 15 (typ.) (VCC VEE = 6 V)
High speed: tpd = 3 ns (typ.) (VCC = 3.0 V)
Low power dissipation: ICC = 4 μA (max) (Ta = 25°C)
Input level: VIL = 0.8 V (max) (VCC = 3 V)
V
IH = 2.0 V (min) (VCC = 3 V)
Power down protection is provided on all control inputs
Pin and function compatible with 74HC4051/4052/4053
Weight: 0.02 g (typ.)
TC7MZ4051,4052,4053FK
2007-10-19
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Pin Assignment (top view)
Truth Table
Control Inputs “ON” Channel
Inhibit C* B A MZ4051FK MZ4052FK MZ4053FK
L L L L 0 0X, 0Y 0X, 0Y, 0Z
L L L H 1 1X, 1Y 1X, 0Y, 0Z
L L H L 2 2X, 2Y 0X, 1Y, 0Z
L L H H 3 3X, 3Y 1X, 1Y, 0Z
L H L L 4 0X, 0Y, 1Z
L H L H 5 1X, 0Y, 1Z
L H H L 6 0X, 1Y, 1Z
L H H H 7 1X, 1Y, 1Z
H X X X None None None
X: Don't care, *: Except MZ4052FK
1 14
0
3
A
B
C
13
12
11
10
9
15
4 1
2
3
4
5
6
7
6
COM
7
5
INH
VEE
2
8
16
GND
VCC
TC7MZ4051FK
1X 14
X-COM
0X
3X
A
B
13
12
11
10
9
15
0Y 1
2
3
4
5
6
7
2Y
Y-COM
3Y
1Y
INH
VEE
2X
8
16
GND
VCC
TC7MZ4052FK
X-COM14
1X
0X
A
B
C
13
12
11
10
9
15
1Y 1
2
3
4
5
6
7
0Y
1Z
Z-COM
0Z
INH
VEE
Y-COM
8
16
GND
VCC
TC7MZ4053FK
TC7MZ4051,4052,4053FK
2007-10-19
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System Diagram
TC7MZ4051FK
TC7MZ4052FK
TC7MZ4053FK
Logic Level Converter
C
OUT IN
A
B
C
INH
COM
0
1
2
3
4
5
6
7
C
OUT IN
Logic Level Converter
C
OUT IN
A
B
INH
X-COM
0X
1X
2X
3X
0Y
1Y
2Y
3Y
C
OUT IN
Y-COM
Logic Level Converter
C
OUT IN
A
B
INH
X-COM
0X
1X
0Y
1Y
0Z
1Z
C
OUT IN
Z-COM
Y-COM
C
TC7MZ4051,4052,4053FK
2007-10-19
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Absolute Maximum Ratings (Note)
Characteristics Symbol Rating Unit
VCC 0.5~7.0
Power supply voltage
VCC~VEE 0.5~7.0
V
Control input voltage VIN 0.5~7.0 V
Switch I/O voltage VI/O VEE 0.5~VCC + 0.5 V
Input diode current IIK 20 mA
I/O diode current IIOK ±20 mA
Switch through current IT ±25 mA
DC VCC or ground current ICC ±50 mA
Power dissipation PD 180 mW
Storage temperature Tstg 65~150 °C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristics Symbol Rating Unit
VCC 2~6
VEE −4~0
Power supply voltage
VCC~VEE 2~6
V
Input voltage VIN 0~6.0 V
Switch I/O voltage VI/O VEE~VCC V
Operating temperature Topr 40~85 °C
0~100 (VCC = 3.3 ± 0.3 V)
Input rise and fall time dt/dv
0~20 (VCC = 5 ± 0.5 V)
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
TC7MZ4051,4052,4053FK
2007-10-19
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Electrical Characteristics
DC Electrical Characteristics
Ta = 25°C Ta = 40~85°C
Characteristics Symbol Test Condition
VEE (V) VCC (V) Min Typ. Max Min Max
Unit
2.0 1.5 1.5
3.0 2.0 2.0
4.5 3.15 3.15
High-level VIH
6.0 4.2 4.2
2.0 0.5 0.5
3.0 0.8 0.8
4.5 1.35 1.35
Input voltage
Low-level VIL
6.0 1.8 1.8
V
GND 2.0 200
GND 3.0 45 86 108
GND 4.5 24 37 46
VIN = VIL or VIH
VI/O = VCC to VEE
II/O = 2 mA
3.0 3.0 17 26 33
GND 2.0 28 73 84
GND 3.0 22 38 44
GND 4.5 17 27 31
ON resistance RON
VIN = VIL or VIH
VI/O = VCC or VEE
II/O = 2 mA
3.0 3.0 15 24 28
Ω
GND 2.0 10 25 35
GND 3.0 5 15 20
GND 4.5 5 13 18
Difference of ON
resistance between
switches
ΔRON
VIN = VIL or VIH
VI/O = VCC to VEE
II/O = 2 mA
3.0 3.0 5 10 15
Ω
GND 3.0 ±0.25 ±2.5
Input/Output leakage
current
(switch OFF)
IOFF
VOS = VCC or GND
VIS = GND to VCC
VIN = VIL or VIH 3.0 3.0 ±0.5 ±5.0
μA
GND 3.0 ±0.25 ±2.5Input/Output leakage
current
(switch ON, output open)
IIN
VOS = VCC or GND
VIN = VIL or VIH 3.0 3.0 ±0.5 ±5.0
μA
Control input current IIN V
IN = VCC or GND GND 6.0 ±0.1 ±0.1 μA
GND 3.0 4.0 40.0
Quiescent supply current ICC V
IN = VCC or GND
3.0 3.0 8.0 80.0
μA
TC7MZ4051,4052,4053FK
2007-10-19
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AC Electrical Characteristics (CL = 50 pF, Input: tr = tf = 3 ns, GND = 0 V)
Ta = 25°C Ta = 40~85°C
Characteristics Symbol Test Condition
VEE (V) VCC (V) Min Typ. Max Min Max
Unit
GND 2.0 3.2 6.0 6.9
GND 3.0 1.8 3.0 3.5
GND 4.5 1.3 1.8 2.1
Phase difference between
input and output φI/O All types
3.0 3.0 1.1 1.3 1.5
ns
GND 2.0 9.0 17 20
GND 3.0 5.7 9.0 11
GND 4.5 4.5 6.0 7.0
Output enable time tpZL
tpZH Figure 1 (Note 1)
3.0 3.0 5.8 8.0 10
ns
GND 2.0 13.5 21 25
GND 3.0 11.3 15 18
GND 4.5 10.3 12 14
Output disable time tpLZ
tpHZ Figure 1 (Note 1)
3.0 3.0 10.9 13 15
ns
Control input capacitance Cin All types (Note 2) 5 10 10 pF
4051 11 25 25
4052 9 20 20
COMMON terminal
capacitance CIS
4053
Figure 2
(Note 2) 3.0 3.0
7 15
15
pF
4051 6 13 13
4052 6 13 13
SWITCH terminal
capacitance COS
4053
Figure 2
(Note 2) 3.0 3.0
6 13
13
pF
4051 3 6 6
4052 3 6 6
Feedthrough capacitance CIOS
4053
Figure 2
(Note 2) 3.0 3.0
3 6
6
pF
4051 14
4052 24
Power dissipation
capacitance CPD
4053
Figure 2
(Note 3) GND 6.0
18
pF
Note 1: RL = 1 kΩ
Note 2: Cin, CIS, COS and CIOS are guaranteed by the design.
Note 3: CPD is defined as the value of the internal equivalent capacitance of IC which is calculated from the
operating current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr) = CPDVCCfIN + ICC
TC7MZ4051,4052,4053FK
2007-10-19
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*Analog Switch Characteristics (GND = 0 V, Ta = 25°C)
Characteristics Symbol Test Condition
VEE (V) VCC (V)
Typ. Unit
VIN = 2.0 Vp-p 0 3.0 0.100
VIN = 4.0 Vp-p 0 4.5 0.030
Sine Wave Distortion
(T.H.D) RL = 10 kΩ, CL = 50 pF,
fIN = 1 kHz
VIN = 6.0 Vp-p 0.3 3.0 0.020
%
4051 150
4052 180
4053
0 3.0
200
4051 150
4052 180
4053
0 4.5
200
4051 150
4052 180
Frequency response
(switch ON)
fmax
Adjust fIN voltage to obtain 0dBm
at VOS.
Increase fIN frequency until dB
meter reads 3dB.
RL = 50 Ω, CL = 10 pF,
fIN = 1 MHz, sine wave
Figure 3
4053
3.0 3.0
200
MHz
0 3.0 45
0 4.5 45
VIN is centered at (VCC VEE)/2.
Adjust input for 0dBm.
RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, sine wave
Figure 4 3.0 3.0 45
0 3.0 60
0 4.5 60
Feed through attenuation
(switch OFF)
RL = 50 Ω, CL = 10 pF, fIN = 1 MHz, sine wave
3.0 3.0 60
dB
0 3.0 90
0 4.5 150
Crosstalk
(control input to signal
output)
RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, square wave
(tr = tf = 6 ns)
Figure 5 3.0 3.0 120
mV
0 3.0 45
0 4.5 45
Crosstalk
(between any switches)
Adjust VIN to obtain 0dBm at input.
RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, sine wave
Figure 6 3.0 3.0 45
dB
*: These characteristics are determined by design of devices.
Switch pin
Common pin
TC7MZ4051,4052,4053FK
2007-10-19
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AC Test Circuit
CIOS
CVCC
I/O O/I
VEE GND
(Common pin)
VCC
(Switch pin)
CIS
COS
Figure 2 CIOS, CIS, COS
VIN
CVCC
I/O O/I
VEE GND
10 pF
50 Ω
0.1 μF
VCC
Figure 3 Frequency Response
(switch on)
Figure 4 Feedthrough
VIN
CVCC
I/O O/I
VEE GND
CL
RL
0.1 μF
VCC
RL
Figure 1 tpLZ, tpHZ, tpZL, tpZH
3 ns
90%
10%
50%
3 ns
VCC
GND
VC
50%
VOH
VOL
50%
tpZH
90%
10%
tpHZ
tpLZ
tpZL
VOH
VOL
VO/I
(S1 = VCC, S2 = GND)
VO/I
(S1 = GND, S2 = VCC)
VCC
C
VCC
I/O O/I S2
S1 VEE GND
from
P.G
50 pF
1 kΩ
TC7MZ4051,4052,4053FK
2007-10-19
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C
VCC
I/O O/I
VEE GND
50 pF
600 Ω
0.1 μF
VIN C
I/O O/I
50 pF
600 Ω
600 Ω
VCC
VCC
600 Ω
Figure 6 Cross Talk
(between any two switches)
Figure 5 Cross Talk
(control input to output signal)
CVCC
I/O O/I
VEE GND
50 pF
600 Ω
VCC
from P.G
600 Ω
VCC
GND
TC7MZ4051,4052,4053FK
2007-10-19
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Package Dimensions
Weight: 0.02 g (typ.)
TC7MZ4051,4052,4053FK
2007-10-19
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RESTRICTIONS ON PRODUCT USE
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