SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E B L FEATURES L D *Complementary to MMBTA92/93. H 1 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING 3 G A 2 UNIT Q Voltage MMBTA43 Collector-Emitter MMBTA42 Voltage MMBTA43 P 300 VCBO C 200 K 300 VCEO MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M V 200 1. EMITTER VEBO 5.0 V Collector Current IC 500 mA Emitter Current IE -500 mA PC * 350 mW Junction Temperature Tj 150 Storage Temperature Tstg -55150 Emitter-Base Voltage P V J MMBTA42 N Collector-Base DIM A B C D E G H J K L M N P Q 2. BASE Collector Power Dissipation 3. COLLECTOR SOT-23 * : Package Mounted On 99.5% Alumina 10x8x0.6mm. Marking Type Name Lot No. Lot No. AAX ABX Type Name MMBTA42 MMBTA43 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Collector-Base MMBTA42 Breakdown Voltage MMBTA43 Collector-Emitter MMBTA42 Breakdown Voltage MMBTA43 SYMBOL V(BR)CBO V(BE)CEO * hFE DC Current Gain TEST CONDITION MIN. TYP. MAX. 300 - - 200 - - 300 - - 200 - - IC=1.0mA, VCE=10V 40 - - IC=10mA, VCE=10V 40 - - IC=30mA, VCE=10V 40 - - IC=100A, IE=0 UNIT V IC=1.0mA, IB=0 V Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2.0mA - - 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2.0mA - - 0.9 V 50 - - MHz - - 3.0 - - 4.0 fT Transition Frequency Collector Output MMBTA42 Capacitance MMBTA43 Cob VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0, f=1MHz pF *Pulse Test : Pulse Width300S, Duty Cycle2.0% 1999. 11. 30 Revision No : 3 1/2 MMBTA42/43 1999. 11. 30 Revision No : 3 2/2