1999. 11. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA42/43
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
·Complementary to MMBTA92/93.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
*Pulse Test : Pulse Width≦300μS, Duty Cycle≦2.0%
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base
Breakdown Voltage
MMBTA42 V(BR)CBO IC=100μA, IE=0
300 - -
V
MMBTA43 200 - -
Collector-Emitter
Breakdown Voltage
MMBTA42 V(BE)CEO IC=1.0mA, IB=0 300 - -
V
MMBTA43 200 - -
DC Current Gain * hFE
IC=1.0mA, VCE=10V 40 - -
IC=10mA, VCE=10V 40 - -
IC=30mA, VCE=10V 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2.0mA - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2.0mA - - 0.9 V
Transition Frequency fTVCE=20V, IC=10mA, f=100MHz 50 - - MHz
Collector Output
Capacitance
MMBTA42
Cob VCB=20V, IE=0, f=1MHz
- - 3.0
pF
MMBTA43 - - 4.0
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
MMBTA42 VCBO
300
V
MMBTA43 200
Collector-Emitter
Voltage
MMBTA42 VCEO
300
V
MMBTA43 200
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC500 mA
Emitter Current IE-500 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Tstg -55～150 ℃
Type Name
Marking
MMBTA42 MMBTA43
Lot No.
AAX Type Name
Lot No.
ABX
1999. 11. 30 2/2
MMBTA42/43
Revision No : 3
