MOTOROLA SC IXSTRS/R Ft i ade 6367254 MOTOROLA SC CXSTRS/R FD qb DE f}b347254 onaea7b 96D 82376 D [-29- 27 MAXIMUM RATINGS 2N2060 Rating Symbol | 2N2223,A| 2N2480 | 2N2480A | Unit 2N2060 Collector-Emitter Voltage vi 60 40 40 Vd ite Vologs | Voeo : 2N2223,A Collector-Emitter Voltage VcER 80 - ~ Vde 2N2480A Collector-Base Voltage Vcso 100 76 80 Vde Emitter-Base Voltage Veso 7.0 5.0 5.0 Vdc Collector Current Continuous tc 500 mAdc 2N2060 JAN, JTX, JTXV All Die AVAILABLE One Die_|_ Equal Power CASE 654-07, STYLE 1 re Device Dissipation Pp W Ta = 25 m 2N2060,4 0.6 0.6 poueetor 7 Golestor 2N2223,A 0.5 0.6 2N2480,A 0.3 0.6 6 Derate above 25C mwrc Base 2N2060,A 2.86 3.43 2N2223,4 286 3.43 3 Emitter 6 Emitter 2N2480,A 1,72 3.43 Total Device Dissipation Pp DUAL @T = 26C Watts AMPLIFIER TRANSISTOR 2N2060,A 1.5 3.0 2N2223,A 1.6 3.0 NPN SILICON 2N2480,A 1.0 2.0 Derate above 25C mwrc Refer to MD2218 f hs. 2N2060,A 8.6 17.2 sero oraraphs 2N2223,A 9.1 11.4 2N2480,A 5.7 11.4 Operating and Storage Junction | Ty, Tstg -65 to +200 c Temparature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) VCER(sus) 80 - Vde {lc = 100 mAdc, Ree = 10 ohms) 2N2060, 2N2223, 2N2223A Collector-Emitter Sustaining Voltage(1) VCEO(sus) Vde (lc = 20 mAde, Ip = 0) 2N2480A 40 - (i = 30 mAde, Ip = 0) 2N2060, 2N2223, 2N2223A 60 _ Collector-Base Breakdown Voltage V(BRICBO Vde (ic = 100 wAde, IE = 0} 2N2060, 2N2223, 2N2223A 100 _ 2N2480A* 80 - Emitter-Base Breakdown Voltage VIBRIEBO Vde (le = 100 pAde, ic = 0) 2N2060, 2N2223, 2N2223A 7.0 _ 2N2480A 5.0 _ Collector Cutoff Current IcBo pAdc (Vcog = 30 Vde, lg = 0, Ta = 150C) 2N2480A - 15 {Vcg = 60 Vdc, lp = 0} 2N2480A _ 0.02 (Vcg = 80 Vado, Ip = 0} 2N2060 - 0,002 2N2223, 2N2223A _ 0.01 (Vcg = 80 Vde, Ip = 0, Ta = 150C) 2N2060 _ 10 2N2223, 2N2223A _ 15 Emitter Cutoff Current leBo nAde (VBE = 5.0 Vdc, Ic = 0) 2N2060 ad 2.0 2N2223, 2N2223A _ 10 2N2480A _ 20 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-2 4h DEP oae7254 OOacsa?? 2 IT MOTOROLA SC IXSTRS/R FF 68367254 MOTOROLA SC (XSTRS/R F) SED 82377 D T-a4-arq 2N2060, 2N2223,A, 2N248DA ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic [Symbol Min | Max | Unit | ON CHARACTERISTICS OC Current Gain hee ~_ lig = 10 wAdc, Voce = 5.0 Vde) 2N2060 25 75 2N2223, 2N2223A 16 _ {ic = 100 pAde, Voce = 5.0 Vde} 2N2060 30 90 2N2223, 2N2223A 25 150 2N2480A 35 _- (lg = 1.0 mAdc, Vce = 5.0 Vde} 2N2060 40 120 2N2480A 50 200 (l = 10 mAde, Vce = 5.0 Vdc} 2N2060 50 160 2N2223, 2N2223A 50 200 Collector-Emitter Saturation Voltage VcE{sat) Vde (ic = 50 mAde, Ip = 5.0 mAde} 2N2060A 0.6 2N2060, 2N2223, 2N2223A, 2N2480A - 1.2 Base-Emitter Saturation Voltage VBE(sat) _ a3 Vde (ic = 50 mAdc, Ip = 5.0 mAdc) 2N2060, 2N2223, 2N2223A, 2N2480A SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr MHz (lc = 50 mAdc, Vce = 10 Vde, 2N2223, 2N2223A, 2N2480A 50 _ f = 20 MHz) 2N2060 60 _ : Output Capacitance Cobo pF ! (VcB = 10 Vde, le = 0, f = 1.0 MHz) 2N2060, 2N2060A, 2N2223, 2N2223A _ 15 2N2480A _ 18 Input Capacitance Cibo _ 85 pF (Vpe = 0.5 Vac, Ic = 0, f = 1.0 MHz) 2N2060, 2N2223A, 2N2480A Input Impedance hie ohms | (ic = 1.0 mAdc, Voge = 5.0 Vde, 2N2060 1000 4000 i f = 1.0 kHz) 2N2480A 1000 5000 : input impedance hib ohms (lc = 1.0 mAdc, VcB = .0 Vdc, 2N2060, 2N2223, 2N2223A 20 30 : f = 1.0 kHz) 2N2480A 20 35 j Voltage Feedback Ratio rb _ 3.0 x 10-4 | ' (I = 1.0 mAdc, VcB = 5.0 Vdc, | f = 1.0 kHz) 2N2223, 2N2223A Small-Signal Current Gain he _ | {ip = 1.0 mAdc, Voce = 5.0 Vde, 2N2060 50 450 f = 1.0 kHz) 2N2223, 2N2223A 40 200 i 2N2480A 50 300 Output Admittance Hoe _ 16 zeMhos (i = 1.0 mAde, Voge = 5.0 Vde, ft = 1.0 kHz) 2N2060, 2N2480A Output Admittance Nob _ 0.5 yemhos (Ic = 1.0 mAde, Vcop = 5.0 Vdc, f = 1.0 kHz) 2N2223, 2N2223A ITASRE Pon ewer MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-3 MOTOROLA SC {XSTRS/R FI qb DE jbse7254 Goa2378 4 Tt 6367254 MOTOROLA SC (XSTRS/R F) S6D 82378 D 2N2060, 2N2223,A, 2N2480A T - 24 ~ 271 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit Noise Figure NF dB (Ig = 0.3 mAde, Voce = 10 Vdc, Rg = 5109, f = 1.0 kHz, BW = 1.0 Hz} 2N2480A _ 8.0 (le = 0.3 mAdc, Veg = 10 Vde, Rg = 5100, f = 1.0 kHz, BW = 200 Hz) 2N2060 _ 8.0 (Ic = 0.4 mAde, Vee = 10 Vde, Rg = 1.0 k9, . f = 1.0 kHz, BW = 15.7 kHz}(2) _ 8.0 : MATCHING CHARACTERISTICS DBC Current Gain Ratio{3) hre1/hre2 _ (Ic = 100 pAdc, VcEe = 5.0 Vdc) 2N2060, 2N2223A 0.9 1.0 2N2223, 2N2480A 0.8 1.0 (Iq = 1.0 mAdc, Veg = 5.0 Vde) 2N2060 0.9 1.0 2N2480 0.8 4.0 Base-Emitter Voltage Differential VBe1-VBE2! mvdc (ic = 100 wAde, Vcg = 5.0 Vdc) 2N2060, 2N2223A, 2N2480A _ 5.0 2N2223 _ 15 {ig = 1.0 mAde, Voge = 5.0 Vde) 2N2060, 2N2060A, 2N2480A _ 5.0 2N2480 _ 10 Base-Emitter Voltage Differential Change Due to Temperature A(Vpe1-VBE2) BVPC (i = 100 wAdc, VcE = 5.0 Vde, AT Ta = 55C to + 125C) 2N2060 - 10 2N2223, 2N2223A _ 26 2N2480A _ 15 (1) Pulse Test: Pulse Width = 300 ys, Duty Cycle = 2.0%. (2) Amplifier: 3.0 dB points at 25 Hz and 10 kHz with a roll-off of 6.9 dB per octave. {3) The lowest hg reading is taken as hrEq for this ratio. t FIGURE 1 DC CURRENT GAIN versus COLLECTOR CURRENT FIGURE 2 ON VOLTAGES : 14 ' 12 1.2 z= 100 a W 8 g a rl 0.8 3 8 5 06 Py = = 4 > 04 20 5 927 -Vegisay @ Iola = 10 6 0.01 0.1 1.0 10 100 6300 1.0 10 100 500 tc, COLLECTOR CURRENT (MA) Ie, COLLECTOR CURRENT (MA} MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-4 ae