IRF9520NPbF
HEXFET® Power MOSFET
PD - 95411
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -6.8
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -4.8 A
IDM Pulsed Drain Current -27
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy140 mJ
IAR Avalanche Current-4.0 A
EAR Repetitive Avalanche Energy4.8 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case  3.1
RθCS Case-to-Sink, Flat, Greased Surface 0.50  °C/W
RθJA Junction-to-Ambient  62
Thermal Resistance
VDSS = -100V
RDS(on) = 0.48Ω
ID = -6.8A
TO-220AB
Description
06/15/04
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lP-Channel
lFully Avalanche Rated
lLead-Free
S
D
G
IRF9520NPbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode)   showing the
ISM Pulsed Source Current integral reverse
(Body Diode)   p-n junction diode.
VSD Diode Forward Voltage   -1.6 V TJ = 25°C, IS = -4.0A, VGS = 0V
trr Reverse Recovery Time  100 150 ns TJ = 25°C, IF = -4.0A
Qrr Reverse RecoveryCharge  420 630 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100   V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient  -0.10  V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance   0.48 ΩVGS = -10V, ID = -4.0A
VGS(th) Gate Threshold Voltage -2.0  -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 1.4   S VDS = -50V, ID = -4.0A
  -25 µA VDS = -100V, VGS = 0V
  -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage   100 VGS = 20V
Gate-to-Source Reverse Leakage   -100 nA VGS = -20V
QgTotal Gate Charge   27 ID = -4.0A
Qgs Gate-to-Source Charge   5.0 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge   15 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time  14  VDD = -50V
trRise Time  47  ID = -4.0A
td(off) Turn-Off Delay Time  28  RG = 22Ω
tfFall Time  31  RD = 12Ω, See Fig. 10
Between lead,
  6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance  350  VGS = 0V
Coss Output Capacitance  110  pF VDS = -25V
Crss Reverse Transfer Capacitance  70   = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance  
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -4.0A, di/dt ≤ -300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 18 mH
RG = 25Ω, IAS = -4.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-6.8
-27
IRF9520NPbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-6.7A
0.1
1
10
100
45678910
V = 10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 175 C
J°
T = 25 C
J°
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
IRF9520NPbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
200
400
600
800
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
0.1
1
10
100
0.2 0.8 1.4 2.0 2.6
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
0.1
1
10
100
1 10 100 100
0
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 175 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0 5 10 15 20 25
0
4
8
12
16
20
Q , Tota l Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-4.0 A
V =-20V
DS
V =-50V
DS
V =-80V
DS
IRF9520NPbF
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Du ty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangul a r Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
IRF9520NPbF
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
QG
QGS QGD
V
G
Charge
-10V
D.U.T. VD
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
25 50 75 100 125 150 175
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.7A
-2.5A
-4.0A
IRF9520NPbF
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRF9520NPbF
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
LEAD ASSIGN MENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1. 32 (. 05 2)
1. 22 (. 04 8)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10. 5 4 ( .41 5)
10. 2 9 ( .40 5)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100 )
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLER ANCI NG PER ANSI Y 1 4.5M, 1982. 3 OUTLIN E CONFORMS TO JEDEC OUTL INE T O-220A B.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS D O NOT INCLUDE BURRS.
HEXFET
1- GATE
2- D R A IN
3- S O U R CE
4- D R A IN
LEAD ASSIGNMENTS
IGBTs, CoPAC
K
1- GATE
2- C O L LE C T O R
3- EMITTE R
4- C O L LE C T O R
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSE MBLY LINE "C"
TH IS IS AN IRF1010
LOT COD E 17 89
ASSEMBLED ON W W 19, 19 97 PART NU MBE
R
ASSEMBLY
LOT CODE
DATE CODE
YEAR 7 = 1997
LINE C
WEEK 1 9
LOGO
RECTIFIER
INTERNATIONAL
Note: "P" i n a sse m b l y lin e
position i ndicates "Lead-Fre e"
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/