MCC 2N6307 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features * * * * * NPN Silicon High Voltage Transistors High current capability Fast switching speed High power TO-3 package Horizontal deflection colour TV Switching regulators Maximum Ratings Symbol V CEO V CES V EBO IC ICM IB PC TJ TSTG Rating Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Collector power dissipation Junction Temperature Storage Temperature TO-3 Rating 400 1000 8.0 10 15 3.0 100 -55 to +150 -55 to +150 Unit V V V A A A W O C O C E C K D Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units Collector-Emitter Breakdown Voltage (IC=100mAdc, IB =0) Collector Cutoff Current (VCE =1000Vdc, V BE =0) Emitter-Base Cutoff Current (VEB =8.0Vdc, IC=0) 1000 --- --- Vdc --- --- 1.0 mAdc --- --- 1.0 mAdc U V OFF CHARACTERISTICS V CEO(sus) ICES IEBO A N L H 2 1 Forward Current Transfer ratio* (IC=8.0A dc, V CE=5.0Vdc) V CE(sat) Collector-Emitter Saturation Voltage* (IC=8.0Adc, IB =2.5Adc) V BE(sat) Base-Emitter Saturation Voltage* (IC=8.0Adc,IB =2.5Adc) fT Transition Frequency (IC=0.5A dc, VCE=10V dc) ton Turn on Time (IC=5.0A dc, VCE=250Vdc, IB1=1.0A dc) tF Full time (VCE=40V, IC=8.0A, IB1=IB2=2.5A) tS Storage Time IC=5.0A , VCE=250V, Fall Time IB1=IB2=1.0A *Pulsed: Pulse duration=300us, duty cycle 1.5% PIN 1. PIN 2. CASE. 15 --- --- --- --- --- 3.3 Vdc --- --- 2.2 Vdc B Q ON CHARACTERISTICS hFE G BASE EMITTER COLLECTOR DIMENSIONS --- 10 --- MHz --- 0.2 --- us --- --- 1.0 us --- --- 1.7 0.3 us INCHES DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE www.mccsemi.com Revision: 2 2003/04/30