TetraFET D1082UK SEME LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 2.29 (0.090) 5.33 (0.210) 0.89 (0.035) 2 pls. 4 2 3 7 1 7 1 7 1 16.76 (0.660) 1 1.14 (0.045) 0.64 4.32 (0.170) (0.025) 0.51 (0.020) REF. 6.10 (0.240) 0.64 (0.025) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W - 28V - 200MHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS 0.76 (0.030) REF. 2.29 (0.090) 0.51 (0.020) REF. 4.57 (0.180) 1.02 (0.040) * LOW NOISE * HIGH GAIN - 13dB MINIMUM * SURFACE MOUNT APPLICATIONS TO-251 PACKAGE PIN 1 - GATE PIN 2 - DRAIN PIN 3 - SOURCE PIN 4 - DRAIN * LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Semelab plc. Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk 62.5W 70V 20V 5A -65 to 125C 150C Prelim. 7/96 D1082UK SEME LAB ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter Test Conditions BVDSS Drain-Source Min. Typ. Max. Unit VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 1 A VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 1A GPS Common Source Power Gain Drain Efficiency VDS = 28V IDQ = 0.1A PO = 4W f = 200MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance 70 1 V 0.8 S 13 dB 40 % 20:1 -- Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 30 Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2.5 * Pulse Test: VGS = -5V f = 1MHz 60 pF Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Semelab plc. Thermal Resistance Junction - Case Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk Max. 2C / W Prelim. 7/96