LAB
SEME
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk Prelim. 7/96
D1082UK
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
ID(sat) Drain Current
TSTG Storage Temperature
TJMaximum Operating Junction Temperature
62.5W
70V
±20V
5A
–65 to 125°C
150°C
MECHANICAL DATA
Dimensions in mm (inches)
6.10
(0.240)
7˚
± 1˚
2.29
(0.090) 0.51
(0.020)
REF.
1.14
(0.045)
7˚
± 1˚
7˚
± 1˚
213
0
.
6
4
(
0
.
0
2
5
)
4
.
3
2
(
0
.
1
7
0
)
6.35
(0.250)
0.64
(0.025) 5.33
(0.210)
0.89
(0.035)
2 pls.
1.02
(0.040)
0.51
(0.020)
REF.
16.76
(0.660)
2.29
(0.090)
4.57
(0.180)
0.76
(0.030)
REF.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
TO–251 PACKAGE
PIN 1 – GATE
PIN 3 – SOURCE PIN 2 – DRAIN
PIN 4 – DRAIN
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated)
APPLICATIONS
•LOW COST DC to 200 MHz
METAL GATE RF SILICON FET
TetraFET
4
ROHS COMPLIANT
LAB
SEME
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk Prelim. 7/96
D1082UK
Parameter Test Conditions Min. Typ. Max. Unit
70
1
1
1 7
0.8
13
40
20:1 60
30
2.5
VGS = 0 ID= 10mA
VDS = 28V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 1A
VDS = 28V IDQ = 0.1A
PO= 4W f = 200MHz
VDS = 0V VGS = –5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise stated)
Drain–Source
BVDSS Breakdown Voltage
Zero Gate Voltage
IDSS Drain Current
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
ηDrain Efficiency
VSWR Load Mismatch Tolerance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RTHj–case Thermal Resistance Junction – Case Max. 2°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤2%
