HL6321/22G AlGaInP Laser Diodes Description The HL6321/22G are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application * Laser levelers * Measurement Features * * * * Visible light output: 635nm Typ (nearly equal to He-Ne gas laser) Optical output power: 15 mW CW Low operating current: 105 mA Max Low operating voltage: 2.7 V Max 123 HL6321/22G Absolute Maximum Ratings (TC = 25C) Item Symbol Value Unit Optical output power PO 15 mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr -10 to +50 C Storage temperature Tstg -40 to +85 C Optical and Electrical Characteristics (TC = 25C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 15 -- -- mW Kink free Threshold current Ith 20 -- 75 mA Operating current I OP -- -- 105 mA PO = 15 mW Operating voltage VOP -- -- 2.7 V PO = 15 mW Slope efficiency s 0.3 -- 0.7 mW/mA 9(mW)/(I(12mW)-I(3mW)) Lasing wavelength p 625 635 642 nm PO = 15 mW Beam divergence (parallel) // 5 8 11 deg. PO = 15 mW Beam divergence (perpendicular) 24 30 36 deg. PO = 15 mW Monitor current Is 0.07 0.26 0.45 mA PO = 15 mW, VR(PD) = 5 V 124 HL6321/22G Polarization direction The polarization direction is TM mode. The polarization of 0.63 m LD's is different from that of 0.83/0.78/0.67 m LD's. The polarization direction of 0.63 m LD's is illustrated in the figure below. 125