TIP125, TIP126, TIP127 PNP Darlington Transistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren PNP Version 2004-07-01 Collector current - Kollektorstrom 5A Plastic case Kunststoffgehause TO-220AB Weight approx. - Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1 = B1 2 = C2 3 = E2 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) TIP125 TIP126 TIP127 Collector-Emitter-voltage B open - VCE0 60 V 80 V 100 V Collector-Base-voltage E open - VCB0 60 V 80 V 100 V Emitter-Base-voltage C open - VEB0 50 V Power dissipation - Verlustleistung without cooling - ohne Kuhlung with cooling - mit Kuhlung TC = 25C Ptot Ptot 2 W 1) 65 W Collector current - Kollektorstrom (dc) - IC 5A Peak Collector current - Kollektor-Spitzenstrom - ICM 8A Base current - Basisstrom (dc) - IB 120 mA Junction temperature - Sperrschichttemperatur Tj - 65...+ 150C Storage temperature - Lagerungstemperatur TS - 65...+ 150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - - - - - - 500 nA 500 nA 500 nA - - - - - - 200 nA 200 nA 200 nA Collector-Emitter cutoff current - Kollektorreststrom IB = 0, - VCE = 30 V IB = 0, - VCE = 40 V IB = 0, - VCE = 50 V TIP125 TIP126 TIP127 - ICE0 - ICE0 - ICE0 Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 60 V IE = 0, - VCB = 80 V IE = 0, - VCB = 100 V 1 TIP125 TIP126 TIP127 - ICB0 - ICB0 - ICB0 ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschludrahte in 5 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 1 Darlington Transistors TIP125, TIP126, TIP127 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - - 2 mA - - - - 2V 4V - - 2.5 V 1000 1000 - - - - 4 - - - - 200 pF Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V - IEB0 Collector saturation voltage - Kollektor-Sattigungsspg. 1) - IC = 3 A, - IB = 12 mA - IC = 5 A, - IB = 20 mA - VCEsat - VCEsat Base-Emitter on-voltage - Basis-Emitter-Spannung 1) - IC = 3 A, - VCE = 3 V - VBEon DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 3 V, - IC = 0.5 A - VCE = 3 V, - IC = 3 A hFE hFE Small signal current gain - Kleinsignal-Stromverstarkung - VCE = 4 V, - IC = 3 A, f = 1 MHz hfe Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 100 kHz CCB0 Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to case - Sperrschicht zu Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 62.5 K/W 2) 2 K/W M4 9 10% lb.in. 1 10% Nm TIP120, TIP121, TIP122 Equivalent Circuit - Ersatzschaltbild B1 RthA RthC C2 T1 T2 E2 1 2 ) Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschludrahte in 5 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 2