© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N120B3D1 VCES = 1200V
IC110 = 40A
VCE(sat) ≤ ≤
≤ ≤
≤
2.9V
tfi(typ) = 183ns
DS100413B(03/13)
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
GCE Tab
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1200 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 μA
TJ = 125°C 500 μA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 40A, VGE = 15V, Note 1 2.4 2.9 V
TJ = 150°C 3.1 V
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1200 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 86 A
IC110 TC = 110°C 40 A
IF110 TC = 110°C 25 A
ICM TC = 25°C, 1ms 180 A
IATC = 25°C 20 A
EAS TC = 25°C 400 mJ
SSOA VGE = 15V, TVJ = 150°C, RG = 10Ω ICM = 80 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES
PCTC = 25°C 480 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 6g
Features
zOptimized for 5-30kHZ Switching
zSquare RBSOA
zPositive Thermal Coefficient of
Vce(sat)
zAnti-Parallel Ultra Fast Diode
zAvalanche Rated
zInternational Standard Package
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
1200V XPTTM IGBT
GenX3TM w/ Diode
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120B3D1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
∅ P
TO-247 (IXYH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 40A, VCE = 10V, Note 1 13 22 S
Cies 1690 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 157 pF
Cres 47 pF
Qg(on) 87 nC
Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES 12 nC
Qgc 38 nC
td(on) 22 ns
tri 50 ns
Eon 2.70 mJ
td(off) 177 ns
tfi 183 ns
Eoff 1.60 3.00 mJ
td(on) 24 ns
tri 60 ns
Eon 5.25 mJ
td(off) 205 ns
tfi 206 ns
Eoff 2.05 mJ
RthJC 0.26 °C/W
RthCS 0.21 °C/W
Inductive load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 10Ω
Note 2
Inductive load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 10Ω
Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
VF 3.0 V
TJ = 150°C 1.6 V
IRM 4 A
trr 100 ns
RthJC 0.9 °C/W
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 300V TJ = 100°C
IF = 30A,VGE = 0V, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N120B3D1
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V
11V
10V
7V
9V
6V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
240
0 5 10 15 20 25 30
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
12V
9V
13V
10V
7V
11V
14V
6V
8V
Fi g. 3. Ou tp ut C har act er i sti cs @ T
J
= 150º C
0
10
20
30
40
50
60
70
80
00.511.522.533.544.555.5
V
CE
- Volts
I
C
- Amperes
5V
7V
6V
VGE
= 15V
13V
11V
10V
9V
8V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE
= 15V
I C = 40A
I C = 20A
I C = 80A
Fi g . 5. C o l l ector -to -E mi tter Vol tag e vs.
Gate-to -Emi tter V o l tag e
1
2
3
4
5
6
7
8
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I C
= 80
A
TJ = 25ºC
40
A
20
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
345678910
V
GE
- Volts
I
C
- Amperes
TJ = - 40ºC
25ºC
150ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120B3D1
Fig. 7. Transconductance
0
5
10
15
20
25
30
0 102030405060708090100
I
C
- Amperes
g f s -
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fi g . 10 . R ever s e-B i a s Safe Op eratin g Are a
0
10
20
30
40
50
60
70
80
90
200 300 400 500 600 700 800 900 1000 1100 1200 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
Ω
dv / dt < 10V / ns
Fi g . 11. Maximum Tr an sien t Thermal Imp ed ance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 80A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N120B3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1
2
3
4
5
6
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
Eoff - MilliJoules
0
4
8
12
16
20
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
40
80
120
160
200
240
280
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t f i - Nanoseconds
100
200
300
400
500
600
700
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching En ergy Loss vs.
Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20 30 40 50 60 70 80
I
C
- Amperes
Eoff - MilliJoules
0
2
4
6
8
10
12
14
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching En ergy Loss vs.
Junction Temperature
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125
T
J
- Degrees Centigrade
Eoff - MilliJoules
0
2
4
6
8
10
12
14
Eon - MilliJoules
Eoff Eon - - - -
R
G
= 10
Ω ,
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive T urn-off Switching Times vs.
Collector Current
0
50
100
150
200
250
300
350
400
20 30 40 50 60 70 80
I
C
- Amperes
t f i - Nanoseconds
120
140
160
180
200
220
240
260
280
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction T em perature
0
50
100
150
200
250
300
350
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i - Nanoseconds
150
160
170
180
190
200
210
220
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120B3D1
IXYS REF: IXY_40N120B3(4A-C91) 11-10-11
Fi g. 19. I n du cti ve Tu r n -on Switchi n g Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
20 30 40 50 60 70 80
I
C
- Amperes
t
r i - Nanoseconds
10
14
18
22
26
30
34
38
42
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10Ω , V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 125ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Jun c ti o n Temp er at u r e
20
40
60
80
100
120
140
160
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i - Nanoseconds
10
15
20
25
30
35
40
45
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10Ω , V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Ti mes vs.
Gate R es istance
0
50
100
150
200
250
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t r i - Nanoseconds
0
20
40
60
80
100
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N120B3D1
200 600 10000 400 800
60
70
80
90
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
VFR
diF/dt
V
200 600 10000 400 800
0
5
10
15
20
25
30
100 1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
nC
A/μsA/μs
trr
ns tfr
ZthJC
A/μs
μs
DSEP 29-06
IF= 60A
IF= 30A
IF= 15A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 30A
Fig. 23. Peak Reverse Current IRM
Versus -diF/dt
Fig. 22. Reverse Recovery Charge Qr
Versus -diF/dt
Fig. 21. Forward Current IF Versus VF
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
Qr
IRM
Fig. 24. Dynamic Parameters Qr, IRM
Versus TVJ
Fig. 25. Recovery Time trr Versus -diF/dt Fig. 26. Peak Forward Voltage VFR and
tfr Versus diF/dt
IF= 60A
IF= 30A
IF= 15A
tfr
VFR
Fig. 27. Transient Thermal Resistance Junction to Case
TVJ=25°C
TVJ=100°C
TVJ=150°C
