AO4266E 60V N-Channel AlphaSGT TM General Description Product Summary VDS * Trench Power AlphaSGTTM technology * Low RDS(ON) * Logic Level Gate Drive * ESD Protected * Excellent Gate Charge x RDS(ON) Product (FOM) * RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 60V 11A RDS(ON) (at VGS=10V) < 13.5m RDS(ON) (at VGS=4.5V) < 18m Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested * High Frequency Switching and Synchronous Rectification SOIC-8 Top View D D D Bottom View D D G G PIN1 S S S S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AO4266E SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Avalanche energy L=0.3mH VDS Spike G 10s TA=25C Power Dissipation B C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: February 2017 14 A EAS 29 mJ 72 V 3.1 Steady-State Steady-State W 2.0 TJ, TSTG Symbol t 10s A IAS PD Junction and Storage Temperature Range V 44 VSPIKE TA=70C 20 8.5 IDM Avalanche Current C Units V 11 ID TA=70C Maximum 60 RJA RJL -55 to 150 Typ 31 59 16 www.aosmd.com C Max 40 75 24 Units C/W C/W C/W Page 1 of 5 AO4266E Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A V 1 TJ=55C 1.2 10 A 1.7 2.2 V 11 13.5 17.8 21.9 18 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=9A 14.3 gFS Forward Transconductance VDS=5V, ID=11A 35 VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz m S 1 V 4 A 755 pF 220 pF 20 pF 1.3 2.0 13.5 20 nC Qg(4.5V) Total Gate Charge 6.5 10 Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=11A VGS=0V, VDS=30V VGS=10V, VDS=30V, RL=2.75, RGEN=3 0.6 m SWITCHING PARAMETERS Total Gate Charge Qg(10V) tr f=1MHz A 5 VGS=10V, ID=11A Coss Units 60 VDS=60V, VGS=0V IDSS Max nC 2.5 nC 3.0 nC 11 nC 5 ns 3 ns 19 ns 3 ns IF=11A, di/dt=500A/s 15 Body Diode Reverse Recovery Charge IF=11A, di/dt=500A/s 45 ns nC Body Diode Reverse Recovery Time A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2017 www.aosmd.com Page 2 of 5 AO4266E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V 4V VDS=5V 3.5V 4.5V 40 40 30 ID (A) ID (A) 30 3V 20 125C 20 10 10 VGS=2.5V 25C 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 25 Normalized On-Resistance 2 20 RDS(ON) (m) 2 VGS=4.5V 15 10 VGS=10V 5 1.8 VGS=10V ID=11A 1.6 1.4 1.2 VGS=4.5V ID=9A 1 0.8 0 0 3 6 9 12 0 15 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 1.0E+01 ID=11A 35 1.0E+00 1.0E-01 25 IS (A) RDS(ON) (m) 30 125C 125C 1.0E-02 20 25C 1.0E-03 15 1.0E-04 10 25C 5 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: February 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 Page 3 of 5 AO4266E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=30V ID=11A Ciss 800 Capacitance (pF) VGS (Volts) 8 6 4 2 600 400 Coss 200 0 Crss 0 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1000 TJ(Max)=150C TA=25C 10s 100.0 10.0 100s 1ms 10ms 1.0 Power (W) ID (Amps) 10s RDS(ON) limited 100 10 TJ(Max)=150C TA=25C 0.1 DC 0.0 0.01 0.1 1 VDS (Volts) 10 100 1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=75C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2017 www.aosmd.com Page 4 of 5 AO4266E Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: February 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5