AO4266E
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 11A
R
DS(ON)
(at V
GS
=10V) < 13.5mΩ
R
DS(ON)
(at V
GS
=4.5V) < 18mΩ
Typical ESD protection
HBM Class 2
Applications
100% UIS Tested
100% Rg Tested
60V N-Channel AlphaSGT
TM
Orderable Part Number Package Type Form Minimum Order Quantity
60V
• Trench Power AlphaSGT
TM
technology
• Low R
DS(ON)
• Logic Level Gate Drive
• ESD Protected
• Excellent Gate Charge x R
DS(ON)
Product (FOM)
• RoHS and Halogen-Free Compliant
AO4266E
Tape & Reel
3000
• High Frequency Switching and Synchronous
Rectification
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
PIN1
PIN1
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.3mH
C
E
AS
V
DS
Spike
G
V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
T
A
=25°C
T
A
=70°C
T
A
=25°C
Avalanche Current
C
W
I
D
V
A14
44
mJ29
11
Parameter Max
°C
Units
Junction and Storage Temperature Range -55 to 150
Typ
Thermal Characteristics
Maximum Junction-to-Ambient
A
°C/W
R
θJA
31
59
40
V
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
V
Maximum Units
AO4266E
Tape & Reel
3000
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
16
75
24
Power Dissipation
B
2.0
T
A
=70°C
10µs
P
D
60
72
3.1
Gate-Source Voltage
Pulsed Drain Current
C
8.5
Parameter
Drain-Source Voltage
Continuous Drain
Current
Rev.1.0: February 2017
www.aosmd.com Page 1 of 5
AO4266E
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage 1.2 1.7 2.2 V
11 13.5
T
J
=125°C 17.8 21.9
14.3 18 mΩ
g
FS
35 S
V
SD
0.72 1 V
I
S
4 A
C
iss
755 pF
C
oss
220 pF
C
rss
20 pF
R
g
0.6 1.3 2.0 Ω
Q
g
(10V)
13.5 20 nC
Q
g
(4.5V)
6.5 10 nC
Q
gs
2.5 nC
Q
gd
3.0 nC
Q
oss
Output Charge V
GS
=0V, V
DS
=30V 11 nC
t
D(on)
5 ns
t
r
3 ns
t
D(off)
19
ns
mΩ
V
GS
=10V, V
DS
=30V, I
D
=11A
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Turn-Off DelayTime
V
GS
=10V, V
DS
=30V, R
L
=2.75Ω,
R
GEN
=3
Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=9A
Turn-On Rise Time
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=30V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=11A
V
GS
=10V, I
D
=11A
t
D(off)
19
ns
t
f
3 ns
t
rr
15 ns
Q
rr
45 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=11A, di/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
R
GEN
=3
Ω
I
F
=11A, di/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev.1.0: February 2017 www.aosmd.com Page 2 of 5
AO4266E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
12345
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
0 3 6 9 12 15
RDS(ON) (mΩ)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=4.5V
ID=9A
VGS=10V
ID=11A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
10
20
30
40
50
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
4V
10V
3.5V
4.5V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
5
10
15
20
25
30
35
40
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=11A
25°C
125°C
Rev.1.0: February 2017 www.aosmd.com Page 3 of 5
AO4266E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
1E-05 0.001 0.1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
0
2
4
6
8
10
0 3 6 9 12 15
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
0 10 20 30 40 50 60
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=30V
ID=11A
TJ(Max)=150°C
TA=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
V
> or equal to 4.5V
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
Figure 10: Single Pulse Power Rating Junction
-
to
-
Ambient (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJA=75°C/W
Rev.1.0: February 2017 www.aosmd.com Page 4 of 5
AO4266E
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Resistive Switching Test Circuit & Waveforms
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Figure D: Diode Recovery Test Circuit & Waveforms
Rev.1.0: February 2017 www.aosmd.com Page 5 of 5