SQ4483EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * TrenchFET(R) power MOSFET -30 RDS(on) () at VGS = -10 V 0.0085 RDS(on) () at VGS = -4.5 V 0.0200 ID (A) * AEC-Q101 qualified c * 100 % Rg and UIS tested * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 -22 Configuration Single Package SO-8 SO-8 Single D 8 D 7 D 6 S D 5 G Top View 1 S 2 S 3 S 4 G P-Channel D ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -30 Gate-Source Voltage VGS 20 Continuous Drain Current TC = 25 C TC = 125 C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range ID V -30 -30 IS -30 IDM -84 IAS -32 EAS 51 PD UNIT 7 2 A mJ W TJ, Tstg -55 to +175 C SYMBOL LIMIT UNIT RthJA 85 RthJF 21 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b C/W Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. S15-1806-Rev. A, 10-Aug-15 Document Number: 74794 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4483EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = -250 A -30 - - VGS(th) VDS = VGS, ID = -250 A -1.5 -2.0 -2.5 VDS = 0 V, VGS = 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - 100 VGS = 0 V VDS = -30 V - - -1 VGS = 0 V VDS = -30 V, TJ = 125 C - - -50 VGS = 0 V VDS = -30 V, TJ = 175 C - - -150 VGS = -10 V VDS -5 V -30 - - VGS = -10 V ID = -10 A - 0.0070 0.0085 VGS = -10 V ID = -10 A, TJ = 125 C - - 0.0130 VGS = -10 V ID = -10 A, TJ = 175 C - - 0.0150 VGS = -4.5 V ID = -7 A - 0.0160 0.0200 - 32 - - 3400 4500 - 712 890 - 580 770 VDS = -10 V, ID = -10 A V nA A A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Rg Fall Time c VGS = -10 V VDS = -15 V, f = 1 MHz VDS = -15 V, ID = -10 A f = 1 MHz td(on) tr Time c VGS = 0 V td(off) VDD = -15 V, RL = 1.5 ID -10 A, VGEN = -10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics - 75 113 - 9.5 - - 19 - pF nC 1 2 3 - 20 25 - 146 189 - 57 75 - 20 25 - - -84 A - -0.75 -1.2 V ns b Pulsed Current a ISM Forward Voltage VSD IF = -3 A, VGS = 0 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1806-Rev. A, 10-Aug-15 Document Number: 74794 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4483EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 70 70 VGS = 10 V thru 5 V 56 56 ID - Drain Current (A) ID - Drain Current (A) VGS = 4 V 42 28 14 TC = 125 C VGS = 2 V 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) TC = 25 C 28 14 VGS = 3 V 0 42 TC = -55 C 0 20 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics 10 Transfer Characteristics 10 50 8 40 gfs - Transconductance (S) ID - Drain Current (A) TC = -55 C 6 TC = 25 C 4 2 TC = 25 C 30 TC = 125 C 20 10 TC = 125 C TC = -55 C 0 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 3 Transfer Characteristics 12 15 Transconductance 0.05 6000 5000 C - Capacitance (pF) 0.04 RDS(on) - On-Resistance () 6 9 ID - Drain Current (A) 0.03 0.02 VGS = 4.5 V 4000 Ciss 3000 2000 Coss 0.01 VGS =10 V 1000 Crss 0.00 0 0 14 28 42 ID - Drain Current (A) 56 On-Resistance vs. Drain Current S15-1806-Rev. A, 10-Aug-15 70 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance Document Number: 74794 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4483EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2.0 ID = 10 A VDS = 15 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 20 40 60 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 -50 80 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature -25 150 175 0.15 100 TJ = 150 C 0.12 RDS(on) - On-Resistance () 10 IS - Source Current (A) ID = 10 A 1.7 1 TJ = 25 C 0.1 0.09 0.06 TJ = 150 C 0.01 0.03 0.001 0.00 TJ = 25 C 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 Source Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 1.0 VDS - Drain-to-Source Voltage (V) -30 0.7 VGS(th) Variance (V) 2 ID = 250 A 0.4 ID = 5 mA 0.1 -0.2 -0.5 -32 ID = 1 mA -34 -36 -38 -40 -50 -25 0 25 50 75 100 TJ - Temperature (C) Threshold Voltage S15-1806-Rev. A, 10-Aug-15 125 150 175 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (C) 150 175 Drain Source Breakdown vs. Junction Temperature Document Number: 74794 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4483EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 s Limited by RDS(on)* 1 ms 10 10 ms ID Limited 100 ms,1 s,10 s, DC 1 TC = 25 C Single Pulse 0.1 BVDSS Limited 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1806-Rev. A, 10-Aug-15 Document Number: 74794 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4483EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74794. S15-1806-Rev. A, 10-Aug-15 Document Number: 74794 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 8 0 8 S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000