SQ4483EY
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S15-1806-Rev. A, 10-Aug-15 1Document Number: 74794
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) -30
RDS(on) (Ω) at VGS = -10 V 0.0085
RDS(on) (Ω) at VGS = -4.5 V 0.0200
ID (A) -22
Configuration Single
Package SO-8
Top View
SO-8 Single
1
S
2
S
3
S
1
2
S
3
S
4
G
D
7
D
6
D
5
D
8
P-Channel
D
S
G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
-30
A
TC = 125 °C -30
Continuous Source Current (Diode Conduction) IS-30
Pulsed Drain Current a IDM -84
Single Pulse Avalanche Current L = 0.1 mH IAS -32
Single Pulse Avalanche Energy EAS 51 mJ
Maximum Power Dissipation a TC = 25 °C PD
7W
TC = 125 °C 2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount b RthJA 85 °C/W
Junction-to-Foot (Drain) RthJF 21
SQ4483EY
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S15-1806-Rev. A, 10-Aug-15 2Document Number: 74794
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -30 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = -30 V - - -1
μA VGS = 0 V VDS = -30 V, TJ = 125 °C - - -50
VGS = 0 V VDS = -30 V, TJ = 175 °C - - -150
On-State Drain Current a I
D(on) V
GS = -10 V VDS ≤ -5 V -30 - - A
Drain-Source On-State Resistance a R
DS(on)
VGS = -10 V ID = -10 A - 0.0070 0.0085
Ω
VGS = -10 V ID = -10 A, TJ = 125 °C - - 0.0130
VGS = -10 V ID = -10 A, TJ = 175 °C - - 0.0150
VGS = -4.5 V ID = -7 A - 0.0160 0.0200
Forward Transconductance b gfs VDS = -10 V, ID = -10 A - 32 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = -15 V, f = 1 MHz
- 3400 4500
pF Output Capacitance Coss - 712 890
Reverse Transfer Capacitance Crss - 580 770
Total Gate Charge c Qg
VGS = -10 V VDS = -15 V, ID = -10 A
-75113
nC Gate-Source Charge c Qgs -9.5-
Gate-Drain Charge c Qgd -19-
Gate Resistance Rgf = 1 MHz 1 2 3 Ω
Turn-On Delay Time c td(on)
VDD = -15 V, RL = 1.5 Ω
ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω
-2025
ns
Rise Time c tr - 146 189
Turn-Off Delay Time c td(off) -5775
Fall Time c tf -2025
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM ---84A
Forward Voltage VSD IF = -3 A, VGS = 0 V - -0.75 -1.2 V
SQ4483EY
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S15-1806-Rev. A, 10-Aug-15 3Document Number: 74794
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
14
28
42
56
70
0 4 8 12 16 20
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VGS = 10 V thru 5 V
VGS = 3 V
VGS = 4 V
VGS = 2 V
0
2
4
6
8
10
012345
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= -55 °C
TC= 125 °C
TC= 25 °C
0
14
28
42
56
70
0246810
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= -55 °C
TC= 125 °C
TC= 25 °C
0
10
20
30
40
50
03691215
gfs-Transconductance (S)
ID- Drain Current (A)
TC= 125 °C
TC= -55 °C
TC= 25 °C
0
1000
2000
3000
4000
5000
6000
0 5 10 15 20 25 30
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
Ciss
Coss
Crss
SQ4483EY
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S15-1806-Rev. A, 10-Aug-15 4Document Number: 74794
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 20406080
VGS -Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
ID = 10 A
VDS = 15 V
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS-Source Current (A)
VSD-Source-to-Drain Voltage (V)
TJ= 25 °C
TJ= 150 °C
-0.5
-0.2
0.1
0.4
0.7
1.0
-50 -25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ-Temperature (°C)
ID= 250 μA
ID= 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150 175
RDS(on) -On-Resistance (Normalized)
TJ- Junction Temperature (°C)
ID= 10 A
VGS = 4.5 V
VGS = 10 V
0.00
0.03
0.06
0.09
0.12
0.15
0246810
RDS(on) -On-Resistance (Ω)
VGS -Gate-to-Source Voltage (V)
TJ= 150 °C
TJ= 25 °C
-40
-38
-36
-34
-32
-30
-50-250 255075100125150175
VDS-Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID= 1 mA
SQ4483EY
www.vishay.com Vishay Siliconix
S15-1806-Rev. A, 10-Aug-15 5Document Number: 74794
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
10 ms
Limited by RDS(on)*100 μs
IDM Limited
TC= 25 °C
Single Pulse
BVDSS Limited
1 ms
100 ms,1 s,10 s, DC
I
D
Limited
10-3 10-2 110 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
evitceffE dez
i
lam
r
o
NtneisnarT
ecnadepm
I
lamr
e
hT
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
SQ4483EY
www.vishay.com Vishay Siliconix
S15-1806-Rev. A, 10-Aug-15 6Document Number: 74794
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74794.
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
ev
itceff
E
dez
i
l
a
m
r
o
Nt
ne
is
na
r
T
e
c
n
a
d
e
p
mI
l
a
mr
e
h
T
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 01-Jan-2021 1Document Number: 91000
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