A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits * * * * 100 10 VDS (V) RDS(ON) () Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general purpose applications. * * * * * High pulse current handling in linear mode Low input capacitance Fast switching speed Lead Free By Design/RoHS Compliant (Note 1) Mechanical Data * * * * General purpose 100V FET Power management Disconnect switches Telecoms Complementary Type - ZVP3310F Case: SOT-23 Case Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) * * SOT-23 Drain D Gate G TOP VIEW Ordering Information Product ZVN3310FTA Notes: S Source TOP VIEW Pin Out Configuration Equivalent Circuit Reel size (inches) 7 Tape width (mm) 8 (Note 2) Marking MF Quantity per reel 3000 1. No purposefully added lead. 2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MF ZVN3310F Document Number DS31980 Rev. 4 - 2 MF = Product Type Marking Code 1 of 5 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZVN3310F Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol VDSS VGSS ID IDM Value 100 20 100 2 Units V V mA A Symbol PD TJ, TSTG Value 330 -55 to +150 Unit mW C Thermal Characteristics Characteristic Power Dissipation @TA = 25C Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25C unless otherwise specified TJ = 25C TJ = 125C (Note 4) Gate-Source Leakage Gate Threshold Voltage ON CHARACTERISTICS (Note 3) On-State Drain Current Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS (Note 4) Forward Transconductance (Note 3) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 5) Turn-On Rise Time (Note 5) Turn-Off Delay Time (Note 5) Turn-Off Fall Time (Note 5) Notes: Symbol Min Typ Max Unit BVDSS 100 V IDSS 1 IGSS VGS(th) 0.8 ID (ON) RDS (ON) gfs Ciss Coss Crss tD(on) tr tD(off) tf Test Condition 20 2.4 nA V ID = 1mA, VGS = 0V VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 1mA 500 10 mA VDS = 25V, VGS = 10V VGS = 10V, ID = 500mA 100 3 5 4 5 40 15 5 5 7 6 7 mS VDS = 25V, ID = 500mA pF VDS = 25V, VGS = 0V f = 1.0MHz ns VDD 25V, ID = 500mA 50 A 3. Measured under pulsed conditions. Width = 300s. Duty cycle 2% 4. Sample test. 5. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. ZVN3310F Document Number DS31980 Rev. 4 - 2 2 of 5 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZVN3310F ZVN3310F Document Number DS31980 Rev. 4 - 2 3 of 5 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZVN3310F Package Outline Dimensions E e e1 b 3 leads L1 D E1 A L A1 Dim. Millimeters c Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e Note: 0.95 NOM Min. Inches 0.037 NOM Max. Min. 1.90 NOM Max. 0.075 NOM Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Suggested Pad Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 ZVN3310F Document Number DS31980 Rev. 4 - 2 4 of 5 www.diodes.com mm inches October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZVN3310F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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