IRANSYS FLECTRONICS LIMITED TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS TO-220 PACKAGE @ Designed for Complementary Use with TIP100, TIP101 and TIP102 @ 80 W at 25C Case Temperature 8 A Continuous Collector Current @ Maximum VcE(sat) of 2.5 V at lc =8A absolute maximum ratings (TOP VIEW) at 25C case temperature (unless otherwise noted) O Pin 2 is in electrical contact with the mounting base. RATING SYMBOL VALUE UNIT TIP105 -60 Collector-base voltage (Ip = 0) TIP106 Vecso -80 Vv TIP 107 -100 TIP105 -60 Collector-emitter voltage (lp = 0) TIP106 VcEo -80 Vv TIP 107 -100 Emitter-base voltage VEBo 5 Vv Continuous collector current lo -8 A Peak collector current (see Note 1) lom -15 A Continuous base current lB -1 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 80 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Unclamped inductive load energy (see Note 4) VYoLIo? 10 mJ Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds TL 260 C NOTES: 1. This value applies for t, < 0.3 ms, duty cycle < 10%. Derate linearly to 150C case temperature at the rate of 0.64 W/C. 2. 3. Derate linearly to 150C free air temperature at the rate of 16 MW/C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, Ipjon) = -5 MA, Rae = 100 , VBE(ott) =0, Rs = 0.1 Q, Voc =-20V. TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT . TIP105 -60 V Collector-emitter lo = -30 mA In=0 TIP106 80 V (BRICEO breakdown voltage a Be (see Note 5) TIP107 -100 . Vop= -30V Ip=0 TIP105 -50 | Collector-emitter Vee = -40V Ip =0 TIP106 50 | pA CEO cut-off current cee Be is Vop= -50V Ip=0 TIP 107 -50 Vop= -60V Ip =0 TIP105 -50 | Collector cutof Vop= -80V Ie =0 TIP106 50 A CBO current cBe Ee is Vop = -100 V lp =0 TIP 107 -50 | Emitter cut-off Vea= -5V In =0 3 mA FBO current EB~ a Forward current Vecpe= 4V IG=-3A 1000 20000 Nee . (see Notes 5 and 6) transfer ratio Vecpe= 4V Ic=-8A 200 Collector-emitter Ip= -6mA IG=-3A -2 VocE(sat) . (see Notes 5 and 6) Vv saturation voltage Ip= -80mA Ic=-8A -2.5 Vee soemnitter Voe= -4V Ip=-BA (see Notes 5 and 6) 28] Vv BE voltage CE ce Parallel diode Vec le= 8A lp =O (see Notes 5 and 6) -3.5 Vv forward voltage NOTES: 5. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 1.56 C/W Roya Junction to free air thermal resistance 62.5 C/W Coc Thermal capacitance of case 0.9 JC resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS + MIN | TYP | MAX | UNIT ty Delay time 35 ns t, Rise time fe =-8A IByon) =-80 mA IB(oft) =80mA 300 ns t, Storage time Veet) = 5 V RL =5Q tp = 20 ps, de < 2% 900 ns ty Fall time 1.3 us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS - Typical DC Current Gain Neg 50000 10000 1000 100 Vor th -0-5 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN VS COLLECTOR CURRENT = -4V = 300 us, duty cycle < 2% -1-0 Ty = -40C Ty= 25C T, = 100C |, - Collector Current - A Figure 1. Vee(sat - Base-Emitter Saturation Voltage - V -2:0 1-5 -1-0 -0-5 COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2-0 T T T T T T T > t, = 300 us, duty cycle < 2% 5 I, =1,/100 oO & So > Cc S Vi q 1S > @ a g AY a iy 5 46 A 3 ee onsen = Laermer _ NA Ty = -40C s ae N To = 25C > T, = 100C -0-5 L Ld -10 -0-5 -1-0 -10 I, - Collector Current - A Figure 2. BASE-EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT -3-0 TT TTT T= -40C Ty = 25C \ T, = 100C 2.5} ' \ \ Y Aft \ | A a nr I, = I./100 t, = 300 us, duty cycle < 2% a | | -0-5 -1-0 -10 lor Collector Current - A Figure 3. TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 ty = 100 us, d=0.1=10% p 1 ms, 0.1 = 10% a p 5 ms, 10 d=0.1=10% 3 DC Operation 6 5 3 oO "5 71-0 TIP105 TIP106 TIP107 -0-1 -1-0 -10 -100 -1000 Vog - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION VS CASE TEMPERATURE 100 = 80 5 @ 2 3 \ a 60 y \ 5 N a 40 \ E 5 NX = IN ae 20 \ 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 5. TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 ee eel ph ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) @) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.