DMN63D1LDW
Document number: DS38033 Rev. 1 - 2
1 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMN63D1LDW
NEW PROD UCT
NEW PROD UCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
60V
2Ω @ VGS = 10V
3Ω @ VGS = 5V
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN63D1LDW-7
SOT363
3000/Tape & Reel
DMN63D1LDW-13
SOT363
10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds..
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
B
C
D
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT363
Top View
Top View
Pin out
1D3 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Equivalent Circuit
S1
D1
D2
S2
G1
G2
S1
D1
D2
S2
G1
G2
1D3 YM
1D3 YM
ESD Protected Gate
D1
S1
G1
Gate Protection
Diode
D2
S2
G2
Gate Protection
Diode
Q1 N-Channel
Q2 N-Channel
DMN63D1LDW
Document number: DS38033 Rev. 1 - 2
2 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMN63D1LDW
NEW PROD UCT
NEW PROD UCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
250
200
mA
Maximum Continuous Body Diode Forward Current (Note 6)
IS
0.5
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
IDM
1.2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
310
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
414
°C/W
Total Power Dissipation (Note 6)
PD
390
mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
324
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
—
—
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
—
—
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1.0
1.6
2.5
V
VDS = 10V, ID = 1mA
Static Drain-Source On-Resistance
RDS(ON)
—
—
—
—
2.0
3.0
Ω
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
Forward Transfer Admittance
|Yfs|
80
—
—
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage
VSD
—
0.75
1.1
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
30
—
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
—
4.2
—
pF
Reverse Transfer Capacitance
Crss
—
2.9
—
pF
Gate Resistance
Rg
—
133
—
Ω
f = 1MHz , VGS = 0V, VDS = 0V
Total Gate Charge
Qg
—
304
—
pC
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Qgs
—
203
—
pC
Gate-Drain Charge
Qgd
—
84
—
pC
Turn-On Delay Time
tD(ON)
—
3.9
—
ns
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
Turn-On Rise Time
tR
—
3.4
—
ns
Turn-Off Delay Time
tD(OFF)
—
15.7
—
ns
Turn-Off Fall Time
tF
—
9.9
—
ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN63D1LDW
Document number: DS38033 Rev. 1 - 2
3 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMN63D1LDW
NEW PROD UCT
NEW PROD UCT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 1 2 3 4 5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS=3.0V
VGS=4.0V
VGS=10.0V
VGS=5.0V
VGS=6.0V
VGS=8.0V
0
0.5
1
1.5
2
2.5
-50 -25 025 50 75 100 125 150
RDS(ON), STATIC DRAIN=SOURCE ON-
RESISTANCE (Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 2. On-Resistance Variation with Temperature
VGS=10.0V, ID=300mA
VGS=10.0V, ID=150mA
0
0.4
0.8
1.2
1.6
2
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 4. Gate Threshold Variation with Temperature
ID=1mA
0
0.4
0.8
1.2
1.6
2
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 3. Gate Threshold Variation with Temperature
ID=250μA
0
1
2
3
4
5
0.001 0.01 0.1 1
RDS(ON), STATIC DRAIN-SOURCE ON-STATE
RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 6. Static Drain-Source On-Resistance vs. Drain
Current
VGS= 5.0V
-55℃
25℃
85℃125℃150℃
0.001
0.01
0.1
1
1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
VGS, GATE SOURCE VOLTAGE (V)
Figure 5. Typical Transfer Characteristics
VDS= 10.0V
-55℃
25℃
85℃
150℃
125℃
DMN63D1LDW
Document number: DS38033 Rev. 1 - 2
4 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMN63D1LDW
NEW PROD UCT
NEW PROD UCT
0
1
2
3
4
5
0.001 0.01 0.1 1
RDS(ON), STATIC DRAIN-SOURCE ON-STATE
RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 7. Static Drain-Source On-Resistance vs. Drain
Current
VGS= 10.0V
-55℃
25℃
85℃125℃150℃
1
1.2
1.4
1.6
1.8
2
2 3 4 5 6 7 8 9 10
RDS(ON), STATIC DRAIN-SOURCE ON-
RESISTANCE (Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 8. Static Drain-Source On-Resistance vs. Gate-
Source Voltage
TJ=25℃
ID=300mA
ID=150mA
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0.001
0.01
0.1
1
0 0.5 1 1.5
IDR, REVERSE DRAIN CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Reverse Drain Current
VGS=0V
TJ=-55℃
TJ=25℃
TJ=85℃
TJ=125℃
TJ=150℃
0.001
0.01
0.1
1
10
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
TJ(MAX)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=10V
RDS(ON) Limited
DC
PW=10s
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100μs
DMN63D1LDW
Document number: DS38033 Rev. 1 - 2
5 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMN63D1LDW
NEW PROD UCT
NEW PROD UCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT363
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
1.00
b
0.10
0.30
0.25
c
0.10
0.22
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
F
0.40
0.45
0.425
L
0.25
0.40
0.30
a
8°
All Dimensions in mm
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
RθJA(t)=r(t) * RθJA
RθJA=414℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5
D=0.7
D=0.9
e
D
L
E1
b
E
F
A2
A1
ca
DMN63D1LDW
Document number: DS38033 Rev. 1 - 2
6 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMN63D1LDW
NEW PROD UCT
NEW PROD UCT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.420
Y
0.600
Y1
2.500
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
Y1 G
Y
X
C