B2 - 36 © 2000 IXYS All rights reserved
97510A(1/98)
HiPerFASTTM
IGBT with Diode
Combi Pack
Preliminary data
VCES IC25 VCE(sat) tfi
500 V 75 A 2.3 V 100ns
600 V 75 A 2.5 V 120ns
IXGK 50N50BU1
IXGK 50N60BU1
Symbol Test Conditions Maximum Ratings
50N50 50N60
VCES TJ= 25°C to 150°C 500 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW500 600 V
VGES Continuous ±20 ±20 V
VGEM Transient ±30 ±30 V
IC25 TC= 25°C7575A
IC90 TC= 90°C5050A
ICM TC= 25°C, 1 ms 200 200 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 VCES
PCTC= 25°C 300 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (M4) 0.9/6 Nm/lb.in.
Weight 10 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 500 mA, VGE = 0 V 50N50 50 0 V
50N60 600 V
VGE(th) IC= 500 mA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 • VCES TJ = 25°C 250 mA
VGE = 0 V TJ = 125°C15mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 50N50BU1 2. 3 V
50N60BU1 2.5 V
TO-264 AA
GCE
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
●International standard package
JEDEC TO-264 AA
●High frequency IGBT and anti-
parallel FRED in one package
●2nd generation HDMOSTM process
●Low VCE(sat)
- for minimum on-state conduction
losses
●MOS Gate turn-on
- drive simplicity
●Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Applications
●AC motor speed control
●DC servo and robot drives
●DC choppers
●Uninterruptible power supplies (UPS)
●Switch-mode and resonant-mode
power supplies
Advantages
●Space savings (two devices in one
package)
●Easy to mount with 1 screw
(isolated mounting screw hole)
●Reduces assembly time and cost
●High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
B2 - 37
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 2 5 3 5 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Remarks: Add capacitance from
IXGH50N60B (DS95585B)
Qg200 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 50 nC
Qgc 70 nC
td(on) 50 ns
tri 50 ns
td(off) 110 ns
tfi 50N50 80 150 ns
50N60 150 ns
Eoff 50N50 1.8 mJ
50N60 3.0 mJ
td(on) 50 ns
tri 60 ns
Eon 3mJ
td(off) 200 ns
tfi 50N50 100 ns
50N60 250
Eoff 50N50 2.6 mJ
50N60 4.2 mJ
RthJC 0.42 K/W
RthCK 0.15 K/W
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, 1.7 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms1933A
trr VR = 360 V TJ = 125°C 175 ns
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C3550ns
RthJC 0.75 K/W
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
IXGK50N50BU1 IXGK50N60BU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
B2 - 38 © 2000 IXYS All rights reserved
Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics
Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat)
Figure 5. Admittance Curves Figure 6. Capacitance Curves
IXGK50N50BU1 IXGK50N60BU1
VCE - Volts
0246810
I
C
- Amperes
0
40
80
120
160
200
VGE - Volts
0246810
I
C
- Amperes
0
20
40
60
80
100
VCE-Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
10
100
1000
10000
TJ - Degrees C
25 50 75 100 125 150
V
CE (sat)
- Normalized
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE - Volts
012345
I
C
- Amperes
0
20
40
60
80
100
9V
5V
VCE = 10V
TJ = 25°CTJ = 25°C
IC = 25A
IC = 50A
IC = 100A
TJ = 125°C
f = 1Mhz
7V
VGE = 15V
TJ = 25°C
VCE - Volts
012345
I
C
- Amperes
0
20
40
60
80
100 TJ = 125°C
Ciss
Coss
7V
5V
VGE = 15V
13V
11V
9V
9V
VGE = 15V
13V
11V
VGE = 15V
13V
7V
11V
Crss
5V
B2 - 39
© 2000 IXYS All rights reserved
Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area
Figure 11. IGBT Transient Thermal Resistance
Figure 8. Dependence of EON and EOFF on RG.Figure 7. Dependence of EON and EOFF on IC.
IXGK50N50BU1 IXGK50N60BU1
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.02
VCE - Volts
0 100 200 300 400 500
I
C
- Amperes
0.1
1
10
100
Qg - nanocoulombs
0 50 100 150 200 250 300
V
GE
- Volt s
0
5
10
15
20
RG - Ohms
0 102030405060
E
(OFF)
- millij o u le s
0
2
4
6
8
10
12
E
(ON)
- millijoules
0
1
2
3
4
5
6
IC - Amperes
0 20406080100
E
(OFF)
- milliJoules
0
2
4
6
8
10
12
E
(ON)
- millij o u le s
0
1
2
3
4
5
6
VCE = 25 0V
IC =50A
E(ON)
E(OFF)
E(ON)
E(OFF)
TJ = 125°C
RG = 5.2
W
dV/dt < 5V/ns
D=0.1
D=0.05
Sing le pulse
D = Duty Cycle
TJ = 125°C
600
E(OFF)
E(OFF)
D=0.2
D=0.5
D=0.01
RG = 4.7
W
IC =25A
TJ = 125°C
IC = 100A
IC = 50A
E(ON)
E(ON)
B2 - 40 © 2000 IXYS All rights reserved
IXGK50N50BU1 IXGK50N60BU1
B2 - 41
© 2000 IXYS All rights reserved
IXGK50N50BU1 IXGK50N60BU1
