   
1
FEATURES DESCRIPTION
APPLICATIONS
3
2
4
5
DBV PACKAGE
(TOP VIEW)
1IN
GND
EN
OUT
NR
Fixed Option
3
2
4
6
DBV PACKAGE
(TOP VIEW)
1
IN
GND
EN
OUT
NR
5FB
Adjustable Option
TPS79328
RIPPLE REJECTION
vs
FREQUENCY
IN
EN
OUT
NR
GND
YEQ, YZQ
PACKAGE
(TOP VIEW)
10 100 1 k 10 k
10
40
80
100 k 1 M 10 M
Ripple Rejection (dB)
Frequency (Hz)
IOUT = 10 mA
50
0
VIN = 3.8 V
COUT = 10 µF
CNR = 0.01 µF
IOUT = 200 mA
20
30
60
70
90
100
A3 A1
C3 C1
B2
0
0.05
0.10
0.15
0.20
0.25
0.30
100 1 k 10 k 100 k
Frequency (Hz)
IOUT = 1 mA
VIN = 3.8 V
COUT = 2.2 µF
CNR = 0.1 µF
IOUT = 200 mA
TPS79328
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
Output Spectral Noise Density (µV/√Hz)
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007www.ti.com
ULTRALOW-NOISE, HIGH PSRR, FAST RF 200mA LOW-DROPOUT LINEARREGULATORS IN NanoStar™ WAFER CHIP SCALE AND SOT23
234
•200mA RF Low-Dropout Regulator
The TPS793xx family of low-dropout (LDO)With Enable
low-power linear voltage regulators features highpower-supply rejection ratio (PSRR), ultralow-noise,•Available in Fixed Voltage Versions from 1.8V
fast start-up, and excellent line and load transientto 4.75V and Adjustable (1.22V to 5.5V)
responses in NanoStar wafer chip scale and SOT23•High PSRR (70dB at 10kHz)
packages. NanoStar packaging gives an ultrasmall•Ultralow-Noise (32 μV
RMS
, TPS79328)
footprint as well as an ultralow profile and packageweight, making it ideal for portable applications such•Fast Start-Up Time (50 μs)
as handsets and PDAs. Each device in the family is•Stable With a 2.2 μF Ceramic Capacitor
stable, with a small 2.2 μF ceramic capacitor on the•Excellent Load/Line Transient Response
output. The TPS793xx family uses an advanced,proprietary BiCMOS fabrication process to yield•Very Low Dropout Voltage (112mV at 200mA,
extremely low dropout voltages (for example, 112mVTPS79330)
at 200mA, TPS79330). Each device achieves fast•5- and 6-Pin SOT23 (DBV) and NanoStar Wafer
start-up times (approximately 50 μs with a 0.001 μFChip Scale (YEQ, YZQ) Packages
bypass capacitor) while consuming very lowquiescent current (170 μA typical). Moreover, whenthe device is placed in standby mode, the supply•RF: VCOs, Receivers, ADCs current is reduced to less than 1 μA. The TPS79328exhibits approximately 32 μV
RMS
of output voltage•Audio
noise at 2.8V output with a 0.1 μF bypass capacitor.•Cellular and Cordless Telephones
Applications with analog components that are•Bluetooth
®
, Wireless LAN
noise-sensitive, such as portable RF electronics,•Handheld Organizers, PDAs
benefit from the high PSRR and low-noise featuresas well as the fast response time.
Figure 1.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2NanoStar is a trademark of Texas Instruments.3Bluetooth is a registered trademark of Bluetooth SIG, Inc.4All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2001 – 2007, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
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ABSOLUTE MAXIMUM RATINGS
DISSIPATION RATINGS TABLE
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled withappropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be moresusceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
PRODUCT V
OUT
(2)
TPS793 xxyyyzXX is nominal output voltage (for example, 28 = 2.8V, 285 = 2.85V, 01 = Adjustable).YYY is package designator.Zis package quantity.
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .(2) Output voltages from 1.2V to 4.8V in 50mV increments are available; minimum order quantities may apply. Contact factory for detailsand availability.
Over operating temperature range (unless otherwise noted)
(1)
UNIT
V
IN
range – 0.3V to 6VV
EN
range – 0.3V to 6VV
OUT
range – 0.3V to 6VPeak output current Internally limitedESD rating, HBM 2kVESD rating, CDM 500VContinuous total power dissipation See Dissipation Ratings TableJunction temperature range, DBV package – 40 °C to +150 °CJunction temperature range, YEQ package – 40 °C to +125 °CStorage temperature range, T
stg
– 65 °C to +150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
T
A
≤+25 °C T
A
= +70 °C T
A
= +85 °CDERATING FACTOR POWER POWER POWERBOARD PACKAGE R
θJC
R
θJA
ABOVE T
A
= +25 °C RATING RATING RATING
Low-K
(1)
DBV 65 °C/W 255 °C/W 3.9mW/ °C 390mW 215mW 155mWHigh-K
(2)
DBV 65 °C/W 180 °C/W 5.6mW/ °C 560mW 310mW 225mWLow-K
(1)
YEQ 27 °C/W 255 °C/W 3.9mW/ °C 390mW 215mW 155mWHigh-K
(2)
YEQ 27 °C/W 190 °C/W 5.3mW/ °C 530mW 296mW 216mW
(1) The JEDEC low-K (1s) board design used to derive this data was a 3-inch x 3-inch, two layer board with 2 ounce copper traces on topof the board.(2) The JEDEC high-K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1 ounce internal power andground planes and 2 ounce copper traces on top and bottom of the board.
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ELECTRICAL CHARACTERISTICS
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
Over recommended operating temperature range T
J
= – 40 °C to +125 °C, V
EN
= V
IN
, V
IN
= V
OUT(nom)
+ 1V
(1)
, I
OUT
= 1mA,C
OUT
= 10 μF, C
NR
= 0.01 μF (unless otherwise noted). Typical values are at +25 °C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
IN
Input voltage
(1)
2.7 5.5 VI
OUT
Continuous output current 0 200 mAV
FB
Internal reference (TPS79301) 1.201 1.225 1.250 VOutput voltage range (TPS79301) V
FB
5.5 – V
DO
VTPS79318 0 μA < I
OUT
< 200mA, 2.8V < V
IN
< 5.5V 1.764 1.8 1.836 VTPS79325 0 μA < I
OUT
< 200mA, 3.5V < V
IN
< 5.5V 2.45 2.5 2.55 VTPS79328 0 μA < I
OUT
< 200mA, 3.8V < V
IN
< 5.5V 2.744 2.8 2.856 VOutput voltage TPS793285 0 μA < I
OUT
< 200mA, 3.85V < V
IN
< 5.5V 2.793 2.85 2.907 VTPS79330 0 μA < I
OUT
< 200mA, 4V < V
IN
< 5.5V 2.94 3 3.06 VTPS79333 0 μA≤I
OUT
< 200mA, 4.3V < V
IN
< 5.5V 3.234 3.3 3.366 VTPS793475 0 μA < I
OUT
< 200mA, 5.25V < V
IN
< 5.5V 4.655 4.75 4.845 VLine regulation ( ΔV
OUT
%/ ΔV
IN
)
(1)
V
OUT
+ 1V < V
IN
≤5.5V 0.05 0.12 %/VLoad regulation ( ΔV
OUT
%/ ΔI
OUT
) 0 μA < I
OUT
< 200mA, T
J
= +25 °C 5 mVTPS79328 I
OUT
= 200mA 120 200TPS793285 I
OUT
= 200mA 120 200Dropout voltage
(2)
TPS79330 I
OUT
= 200mA 112 200 mV(V
IN
= V
OUT(nom)
– 0.1V)
TPS79333 I
OUT
= 200mA 102 180TPS793475 I
OUT
= 200mA 77 125Output current limit V
OUT
= 0V 285 600 mAGND pin current 0 μA < I
OUT
< 200mA 170 220 μAShutdown current
(3)
V
EN
= 0V, 2.7V < V
IN
< 5.5V 0.07 1 μAFB pin current V
FB
= 1.8V 1 μAf = 100Hz, T
J
= +25 °C, I
OUT
= 10mA 70f = 100Hz, T
J
= +25 °C, I
OUT
= 200mA 68Power-supply ripple rejection TPS79328 dBf = 10kHz, T
J
= +25 °C, I
OUT
= 200mA 70f = 100kHz, T
J
= +25 °C, I
OUT
= 200mA 43C
NR
= 0.001 μF 55C
NR
= 0.0047 μF 36BW = 200Hz to 100kHz,Output noise voltage (TPS79328) μV
RMSI
OUT
= 200mA
C
NR
= 0.01 μF 33C
NR
= 0.1 μF 32C
NR
= 0.001 μF 50Time, start-up (TPS79328) R
L
= 14 Ω, C
OUT
= 1 μF C
NR
= 0.0047 μF 70 μsC
NR
= 0.01 μF 100High level enable input voltage 2.7V < V
IN
< 5.5V 1.7 V
IN
VLow level enable input voltage 2.7V < V
IN
< 5.5V 0 0.7 VEN pin current V
EN
= 0V – 1 1 μAUVLO threshold V
CC
rising 2.25 2.65 VUVLO hysteresis 100 mV
(1) Minimum V
IN
is 2.7V or V
OUT
+ V
DO
, whichever is greater.(2) Dropout is not measured for the TPS79318 and TPS79325 since minimum V
IN
= 2.7V.(3) For adjustable versions, this parameter applies only after V
IN
is applied; then V
EN
transitions high to low.
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FUNCTIONAL BLOCK DIAGRAMS
ADJUSTABLE VERSION
_+
Thermal
Shutdown
Bandgap
Reference
1.22V
Current
Sense
R2
GND
EN
SHUTDOWN
Vref
UVLO
ILIM
External to
the Device
R1
UVLO
2.45V
250 kΩNR
FB
59 k
QuickStart
OUTIN
IN
FIXED VERSION
_+
Thermal
Shutdown
Current
Sense
R1
R2
GND
EN
SHUTDOWN
Vref
UVLO
ILIM
250 kΩNR
QuickStart
Bandgap
Reference
1.22V
UVLO
2.45V
R2 = 40 kΩ
IN
IN OUT
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
Table 1. Terminal Functions
TERMINAL
SOT23 SOT23 WCSPNAME ADJ FIXED FIXED DESCRIPTION
Connecting an external capacitor to this pin bypasses noise generated by the internal bandgap.NR 4 4 B2
This improves power-supply rejection and reduces output noise.Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator intoEN 3 3 A3
shutdown mode. EN can be connected to IN if not used.FB 5 N/A N/A This terminal is the feedback input voltage for the adjustable device.GND 2 2 A1 Regulator groundIN 1 1 C3 Input to the device.OUT 6 5 C1 Output of the regulator.
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TYPICAL CHARACTERISTICS (SOT23 PACKAGE)
2.795
2.796
2.797
2.798
2.799
2.800
2.801
2.802
2.803
2.804
2.805
0 50 100 150 200
IOUT (mA)
VIN = 3.8 V
COUT = 10 µF
TJ = 25°C
VOUT (V)
0
50
100
150
200
250
−40−25−10 5 20 35 50 65 80 95 110 125
TJ (°C)
IOUT = 1 mA
VIN = 3.8 V
COUT = 10 µF
IOUT = 200 mA
IGND (µA)
2.775
2.780
2.785
2.790
2.795
2.800
2.805
−40−25−10 5 20 35 50 65 80 95 110 125
TJ (°C)
IOUT = 200 mA
IOUT = 1 mA
VIN = 3.8 V
COUT = 10 µF
VOUT (V)
100 1 M10 1 k
Frequency (Hz)
10 k 100 k
IOUT = 1 mA
0
0.5
1.0
1.5
2.0
2.5
0
IOUT = 100 mA
10 M
VIN = 3.8 V
COUT = 10 µF
TJ = 25° C
ZO (Ω)
0
20
40
60
80
100
120
140
160
180
−40−25−10 5 20 35 50 65 80 95 110 125
IOUT = 200 mA
IOUT = 10 mA
VIN = 2.7 V
COUT = 10 µF
TJ (°C)
VDO (mV)
0.001 0.01 0.1
CNR (µF)
0
10
20
30
40
50
60 VOUT = 2.8 V
IOUT = 200 mA
COUT = 10 µF
BW = 100 Hz to 100 kHz
RMS, Output Noise (VRMS)
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
TPS79328 TPS79328 TPS79328OUTPUT VOLTAGE OUTPUT VOLTAGE GROUND CURRENTvs vs vsOUTPUT CURRENT JUNCTION TEMPERATURE JUNCTION TEMPERATURE
Figure 2. Figure 3. Figure 4.
TPS79328 OUTPUT SPECTRAL TPS79328 OUTPUT SPECTRAL TPS79328 OUTPUT SPECTRALNOISE DENSITY NOISE DENSITY NOISE DENSITYvs vs vsFREQUENCY FREQUENCY FREQUENCY
Figure 5. Figure 6. Figure 7.
ROOT MEAN SQUARE OUTPUT TPS79328NOISE OUTPUT IMPEDANCE DROPOUT VOLTAGEvs vs vsC
NR
FREQUENCY JUNCTION TEMPERATURE
Figure 8. Figure 9. Figure 10.
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10 100 1 k 10 k
10
40
80
100 k 1 M 10 M
Ripple Rejection (dB)
Frequency (Hz)
IOUT = 10 mA
50
0
VIN = 3.8 V
COUT = 10 µF
CNR = 0.01 µF
IOUT = 200 mA
20
30
60
70
90
100
10 100 1 k 10 k
20
60
100
100 k 1 M 10 M
Ripple Rejection (dB)
Frequency (Hz)
VIN = 3.8 V
COUT = 2.2 µF
CNR = 0.01 µF
IOUT = 10 mA
IOUT = 200 mA
40
70
90
30
50
80
10
0
10 100 1 k 10 k
20
60
100
100 k 1 M 10 M
Ripple Rejection (dB)
Frequency (Hz)
VIN = 3.8 V
COUT = 2.2 µF
CNR = 0.1 µF
IOUT = 10 mA
IOUT = 200 mA
40
70
90
30
50
80
10
0
3
Time (µs)
0 604020 80 100 140120 160 180 200
VIN = 3.8 V
VOUT = 2.8 V
IOUT = 200 mA
COUT = 2.2 µF
TJ = 25°C
1
2
0
0
2CNR = 0.0047 µF
CNR = 0.01 µF
4
CNR = 0.001 µF
VEN (V)VOUT (V)
Time (µs)
0 302010 40 50 7060 80 90 100
IOUT = 200 mA
COUT = 2.2 µF
CNR = 0.01 µF
0
-20
3.8
dv
dt +0.4 V
µs
20
4.8
VIN (mV) VOUT (mV)
Time (µs)
0
0 15010050 200 250 350300 400 450
20
0
−20
100
500
VIN = 3.8 V
COUT = 10 µF
−40
200
300 di
dt +0.02A
µs
1mA
IOUT (mA) ∆VOUT (mV)
500 mV/div
1s/div
VIN VOUT
VOUT = 3 V
RL = 15 Ω
100
50
0 20 40 60 80 100 120
150
200
250
140 160 180 200
0
IOUT (mA)
TJ = 125°C
TJ = 25°C
TJ = −55°C
VDO (mV)
0
50
100
150
200
2.5 3.0 3.5 4.0 4.5 5.0
VIN (V)
IOUT = 200 mA
TJ = 25°C
TJ = −40°C
TJ = 125°C
VDO (mV)
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS (SOT23 PACKAGE) (continued)
TPS79328 TPS79328 TPS79328RIPPLE REJECTION RIPPLE REJECTION RIPPLE REJECTIONvs vs vsFREQUENCY FREQUENCY FREQUENCY
Figure 11. Figure 12. Figure 13.
TPS79328 OUTPUT VOLTAGE,ENABLE VOLTAGE
vs TPS79328 TPS79328TIME (START-UP) LINE TRANSIENT RESPONSE LOAD TRANSIENT RESPONSE
Figure 14. Figure 15. Figure 16.
TPS79301DROPOUT VOLTAGE DROPOUT VOLTAGEvs vsPOWER-UP / POWER-DOWN OUTPUT CURRENT INPUT VOLTAGE
Figure 17. Figure 18. Figure 19.
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0.01
0.1
10
100
0 0.02 0.04 0.06 0.08 0.20
IOUT (A)
1
Region of Instability
Region of Stability
COUT = 2.2 µF
VIN = 5.5 V, VOUT ≥ 1.5 V
TJ = −40°C to 125°C
ESR, Equivalent Series Resistance (Ω)
0.01
0.1
10
100
0 0.02 0.04 0.06 0.08 0.20
IOUT (A)
1
Region of Instability
Region of Stability
COUT = 10 µF
VIN = 5.5 V
TJ = −40°C to 125°C
ESR, Equivalent Series Resistance (Ω)
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS (SOT23 PACKAGE) (continued)
TYPICAL REGIONS OF STABILITY TYPICAL REGIONS OF STABILITYEQUIVALENT SERIES RESISTANCE EQUIVALENT SERIES RESISTANCE(ESR) (ESR)vs vsOUTPUT CURRENT OUTPUT CURRENT
Figure 20. Figure 21.
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APPLICATION INFORMATION
TPS793xx
GNDEN NR
IN OUT
VIN VOUT
0.1µF
0.01µF
2.2µF
VIN VOUT
External Capacitor Requirements
Board Layout Recommendation to Improve PSRR and Noise Performance
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
The TPS793xx family of low-dropout (LDO) regulators has been optimized for use in noise-sensitivebattery-operated equipment. The device features extremely low dropout voltages, high PSRR, ultralow outputnoise, low quiescent current (170 μA typically), and enable-input to reduce supply currents to less than 1 μA whenthe regulator is turned off.
A typical application circuit is shown in Figure 22 .
Figure 22. Typical Application Circuit
A 0.1 μF or larger ceramic input bypass capacitor, connected between IN and GND and located close to theTPS793xx, is required for stability and improves transient response, noise rejection, and ripple rejection. Ahigher-value input capacitor may be necessary if large, fast-rise-time load transients are anticipated or the deviceis located several inches from the power source.
Like most low-dropout regulators, the TPS793xx requires an output capacitor connected between OUT and GNDto stabilize the internal control loop. The minimum recommended capacitance is 2.2 μF. Any 2.2 μF or largerceramic capacitor is suitable, provided the capacitance does not vary significantly over temperature. If loadcurrent is not expected to exceed 100mA, a 1.0 μF ceramic capacitor can be used.
The internal voltage reference is a key source of noise in an LDO regulator. The TPS793xx has an NR pin whichis connected to the voltage reference through a 250k Ωinternal resistor. The 250k Ωinternal resistor, inconjunction with an external bypass capacitor connected to the NR pin, creates a low-pass filter to reduce thevoltage reference noise and, therefore, the noise at the regulator output. In order for the regulator to operateproperly, the current flow out of the NR pin must be at a minimum, because any leakage current creates an IRdrop across the internal resistor, thus creating an output error. Therefore, the bypass capacitor must haveminimal leakage current. The bypass capacitor should be no more than 0.1 μF to ensure that it is fully chargedduring the quickstart time provided by the internal switch shown in the Functional Block Diagrams .
As an example, the TPS79328 exhibits only 32 μV
RMS
of output voltage noise using a 0.1 μF ceramic bypasscapacitor and a 2.2 μF ceramic output capacitor. Note that the output starts up slower as the bypass capacitanceincreases due to the RC time constant at the NR pin that is created by the internal 250k Ωresistor and externalcapacitor.
To improve ac measurements like PSRR, output noise, and transient response, it is recommended that the boardbe designed with separate ground planes for V
IN
and V
OUT
, with each ground plane connected only at the GNDpin of the device. In addition, the ground connection for the bypass capacitor should connect directly to the GNDpin of the device.
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Power Dissipation and Junction Temperature
PD(max)+TJmax*TA
RQJA
(1)
PD+ǒVIN*VOUTǓ IOUT
(2)
Programming the TPS79301 Adjustable LDO Regulator
VOUT +VREF ǒ1)R1
R2Ǔ
(3)
R1+ǒVOUT
VREF *1Ǔ R2
(4)
C1+(3 x 10*7) x (R1)R2)
(R1x R2)
(5)
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
Specified regulator operation is assured to a junction temperature of +125 °C; the maximum junction temperatureshould be restricted to +125 °C under normal operating conditions. This restriction limits the power dissipation theregulator can handle in any given application. To ensure the junction temperature is within acceptable limits,calculate the maximum allowable dissipation, P
D(max)
, and the actual dissipation, P
D
, which must be less than orequal to P
D(max)
.
The maximum power dissipation limit is determined using Equation 1 :
Where:
•T
J
max is the maximum allowable junction temperature.•R
θJA
is the thermal resistance junction-to-ambient for the package (see the Dissipation Ratings Table ).•T
A
is the ambient temperature.
The regulator dissipation is calculated using Equation 2 :
Power dissipation resulting from quiescent current is negligible. Excessive power dissipation triggers the thermalprotection circuit.
The output voltage of the TPS79301 adjustable regulator is programmed using an external resistor divider asshown in Figure 23 . The output voltage is calculated using Equation 3 :
Where:
•V
REF
= 1.2246V typ (the internal reference voltage)
Resistors R
1
and R
2
should be chosen for approximately 50 μA divider current. Lower value resistors can be usedfor improved noise performance, but the solution consumes more power. Higher resistor values should beavoided as leakage current into/out of FB across R
1
/R
2
creates an offset voltage that artificiallyincreases/decreases the feedback voltage and thus erroneously decreases/increases V
OUT
. The recommendeddesign procedure is to choose R
2
= 30.1k Ωto set the divider current at 50 μA, C
1
= 15pF for stability, and thencalculate R
1
using Equation 4 :
In order to improve the stability of the adjustable version, it is suggested that a small compensation capacitor beplaced between OUT and FB. For voltages less than 1.8V, the value of this capacitor should be 100pF. Forvoltages greater than 1.8V, the approximate value of this capacitor can be calculated as shown in Equation 5 :
The suggested value of this capacitor for several resistor ratios is shown in the table below. If this capacitor isnot used (such as in a unity-gain configuration) or if an output voltage less than 1.8V is chosen, then theminimum recommended output capacitor is 4.7 μF instead of 2.2 μF.
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GNDNR FB
IN OUT
EN
VIN VOUT
R1C1
R2
1 Fm
2.2 Fm
0.01 Fm
TPS79301
OUTPUTVOLTAGE
PROGRAMMINGGUIDE
R1R2C1
2.5V
3.3V
3.6V
1.22V
OUTPUT
VOLTAGE
31.6kW
short
51kW
59kW
open
30.1kW
30.1kW
30.1kW
0pF
22pF
15pF
15pF
Regulator Protection
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
Figure 23. TPS79301 Adjustable LDO Regulator Programming
The TPS793xx PMOS-pass transistor has a built-in back diode that conducts reverse current when the inputvoltage drops below the output voltage (for example, during power-down). Current is conducted from the outputto the input and is not internally limited. If extended reverse voltage operation is anticipated, external limitingmight be appropriate.
The TPS793xx features internal current limiting and thermal protection. During normal operation, the TPS793xxlimits output current to approximately 400mA. When current limiting engages, the output voltage scales backlinearly until the overcurrent condition ends. While current limiting is designed to prevent gross device failure,care should be taken not to exceed the power dissipation ratings of the package or the absolute maximumvoltage ratings of the device. If the temperature of the device exceeds approximately +165 °C, thermal-protectioncircuitry shuts it down. Once the device has cooled down to below approximately +140 °C, regulator operationresumes.
10 Submit Documentation Feedback Copyright © 2001 – 2007, Texas Instruments Incorporated
www.ti.com
TPS793xxYEQ, YZQ NanoStar ™ Wafer Chip Scale Information
0.625 Max
NOTES:A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. NanoStar package configuration.
NanoStar is a trademark of Texas Instruments.
1,30
1,34
0,79
0,84
TPS793xx
SLVS348K – JULY 2001 – REVISED OCTOBER 2007
Figure 24. NanoStar ™ Wafer Chip Scale Package
Copyright © 2001 – 2007, Texas Instruments Incorporated Submit Documentation Feedback 11
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TPS79301DBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79301DBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79318DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79318DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79318DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79318DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79318YEQR NRND DSBGA YEQ 5 3000 TBD Call TI Call TI
TPS79318YEQT NRND DSBGA YEQ 5 250 TBD Call TI Call TI
TPS79318YZQR ACTIVE DSBGA YZQ 5 3000 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
TPS79318YZQT ACTIVE DSBGA YZQ 5 250 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
TPS79325DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79325DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79325YEQR NRND DSBGA YEQ 5 TBD Call TI Call TI
TPS79325YEQT NRND DSBGA YEQ 5 TBD Call TI Call TI
TPS79325YZQR ACTIVE DSBGA YZQ 5 3000 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
TPS793285DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS793285DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS793285DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS793285DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS793285YEQR NRND DSBGA YEQ 5 TBD Call TI Call TI
TPS793285YEQT NRND DSBGA YEQ 5 TBD Call TI Call TI
TPS793285YZQR ACTIVE DSBGA YZQ 5 3000 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
TPS793285YZQT ACTIVE DSBGA YZQ 5 250 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
TPS79328DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79328DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79328YEQR NRND DSBGA YEQ 5 TBD Call TI Call TI
TPS79328YEQT NRND DSBGA YEQ 5 TBD Call TI Call TI
TPS79328YZQR ACTIVE DSBGA YZQ 5 3000 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
PACKAGE OPTION ADDENDUM
www.ti.com 16-Apr-2009
Addendum-Page 1
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TPS79328YZQT ACTIVE DSBGA YZQ 5 250 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
TPS79330DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79330DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79330YEQR NRND DSBGA YEQ 5 3000 TBD Call TI Call TI
TPS79330YEQT NRND DSBGA YEQ 5 250 TBD Call TI Call TI
TPS79330YZQR ACTIVE DSBGA YZQ 5 3000 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
TPS79330YZQT ACTIVE DSBGA YZQ 5 250 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
TPS79333DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS79333DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS793475DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPS793475DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPS79301, TPS79318, TPS79325, TPS793285, TPS79333, TPS793475 :
PACKAGE OPTION ADDENDUM
www.ti.com 16-Apr-2009
Addendum-Page 2
•Automotive: TPS79301-Q1,TPS79318-Q1,TPS79325-Q1,TPS793285-Q1,TPS79333-Q1,TPS793475-Q1
•Enhanced Product: TPS79301-EP,TPS79318-EP,TPS79325-EP,TPS79333-EP,TPS793475-EP
NOTE: Qualified Version Definitions:
•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•Enhanced Product - Supports Defense, Aerospace and Medical Applications
PACKAGE OPTION ADDENDUM
www.ti.com 16-Apr-2009
Addendum-Page 3
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPS79301DBVR SOT-23 DBV 6 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS79318DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS79318DBVT SOT-23 DBV 5 250 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS79318YZQR DSBGA YZQ 5 3000 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS79318YZQT DSBGA YZQ 5 250 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS79325DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS79325YZQR DSBGA YZQ 5 3000 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS793285DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS793285DBVT SOT-23 DBV 5 250 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS793285YZQR DSBGA YZQ 5 3000 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS793285YZQT DSBGA YZQ 5 250 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS79328DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS79328YZQR DSBGA YZQ 5 3000 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS79328YZQT DSBGA YZQ 5 250 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS79330DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS79330YZQR DSBGA YZQ 5 3000 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS79330YZQT DSBGA YZQ 5 250 178.0 8.4 0.98 1.46 0.69 4.0 8.0 Q1
TPS79333DBVR SOT-23 DBV 5 3000 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Sep-2009
Pack Materials-Page 1
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPS79333DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TPS793475DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS79301DBVR SOT-23 DBV 6 3000 195.0 200.0 45.0
TPS79318DBVR SOT-23 DBV 5 3000 195.0 200.0 45.0
TPS79318DBVT SOT-23 DBV 5 250 195.0 200.0 45.0
TPS79318YZQR DSBGA YZQ 5 3000 217.0 193.0 35.0
TPS79318YZQT DSBGA YZQ 5 250 217.0 193.0 35.0
TPS79325DBVR SOT-23 DBV 5 3000 195.0 200.0 45.0
TPS79325YZQR DSBGA YZQ 5 3000 217.0 193.0 35.0
TPS793285DBVR SOT-23 DBV 5 3000 195.0 200.0 45.0
TPS793285DBVT SOT-23 DBV 5 250 195.0 200.0 45.0
TPS793285YZQR DSBGA YZQ 5 3000 217.0 193.0 35.0
TPS793285YZQT DSBGA YZQ 5 250 217.0 193.0 35.0
TPS79328DBVR SOT-23 DBV 5 3000 195.0 200.0 45.0
TPS79328YZQR DSBGA YZQ 5 3000 217.0 193.0 35.0
TPS79328YZQT DSBGA YZQ 5 250 217.0 193.0 35.0
TPS79330DBVR SOT-23 DBV 5 3000 195.0 200.0 45.0
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Sep-2009
Pack Materials-Page 2
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS79330YZQR DSBGA YZQ 5 3000 217.0 193.0 35.0
TPS79330YZQT DSBGA YZQ 5 250 217.0 193.0 35.0
TPS79333DBVR SOT-23 DBV 5 3000 182.0 182.0 20.0
TPS79333DBVR SOT-23 DBV 5 3000 195.0 200.0 45.0
TPS793475DBVR SOT-23 DBV 5 3000 195.0 200.0 45.0
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Sep-2009
Pack Materials-Page 3
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