NEC / PS2706-1, PS2706 DATA SHEET PHOTOCOUPLERS -2, PS2706-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE SOP MULTI PHOTOCOUPLER NEPOC Series DESCRIPTION silicon darlington-connected phototransistor. Each is mounted in a plastic SOP (Small Out-line Package) for high density applications. This package has shield effect to cut off ambient light. FEATURES High isolation voltage (BY : 3.75 kVrms. MIN.) SOP (Small Out-line Package} Each isolated channels per package AG input response High current transfer ratio (CTR: 200 % MIN. @ IF =+1 mA, Voce = 2 V} High speed switching (t, tt= 200 ws TYP.) Taping product number (only -1 type} (P32706-1 -E3, E4)} UL Approved (File No. E72422(S)} VDE 0884 Approved (Option) ORDERING INFORMATION The PS2706-1, -2 and -4 series are optically coupled isolator containing GaAs light emitting diodes and an NPN ORDERING NUMBER PACKAGE SAFETY STANDARD APPROVAL P$2706-1 4 pin SOP Standard specification products PS2706-2 8 pin SOP * UL Approved PS2706-4 16 pin SOP P32706-1-V 4 pin SOP VDE0884 specification products (Option) P$2706-2-V 8 pin SOP * VDE Approved . + UL Approved PS2706-4-V 16 pin SOP Document No. P11310EJ4VODS00 (4th edition) (Previous No. LC-2190A) Date Published February 1996 P Printed in Japan NEC Corporation 1988NEC PACKAGE DIMENSIONS (Unit: in millimeters) PS2706-1, PS2706-2, PS2706-4 23 MAX. +04 | 2.0 PS2706-1 PIN CONNECTION (Top View) 4 3 H A 43 me 1. Anode, Cathode Ws 2. Cathode, Anode rad 3. Emitter Bo 5 2 4. Collector 1 2 4.5 MAX. o* ft. ge [1.3 7 2 Lp o 2.54/12 MAX. PS2706-2 PIN CONNECTION (Top View) a 5 8 765 AA A A AO At 1.3. Anode, Cathode Fy Fy 2. 4. Cathode, Anode 5. 7. Emitter Wot of 6. 8. Collector 12 3 4 A B & #4 ow 7.9104 > 01 9.3 MAX = ae ft ST 2 a ft 9523 Ns 1.2 MAX. . ae = 40.4352 510.25 40) S042 R50 250) PS2706-4 16 PIN GONNECTION (Top View) 19.46 MAX. _ o [2.54] : 0.47019 610.25 (My 2.3 MAX sor [| 2.0 0.15 oh S ~ or Ao ba y= ARO Omon ua QF 0 28 4 0 a6 >a om og oa oDNEC PS2706-1, PS2706-2, PS2706-4 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Diode (P32706-1} (PS2706-2, 2706-4) Forward Current (DC} IF +50 +50 mA Power Dissipation Derating APp/'C 0.8 0.8 mWre Power Dissipation Pp 80 80 mWichannel Peak Forward Current IF {peak +H1 +4 A (PW = 100 ps, Duty Cycle 1 %) Transistor Collector to Emitter Voltage VcEO 40 40 Vv Emitter to Collector Voltage VECO 6 6 Vv Collector Current Ic 200 160 mA/channel Power Dissipation Derating APefC 15 1.2 mWwre Power Dissipation Pc 150 120 mWichannel Coupled Isolation Voltage )) BV 3 750 3 750 Vems. Storage Temperature Tsig -55 to +150 -55 to +150 C Operating Temperature Tapt 55 to +100 55 to +100 C *1) AG voltage for 1 minute at Ta = 25 C, RH = 60 % between input and output. ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL | MIN. | TYP. | MAX. | UNIT TEST CONDITIONS Diode Forward Voltage VF 1.1 1.4 Vv lF=+5 mA Junction Capacitance Ci 60 pF V=0,f=1.0 MHz Transistor Collector to Emitter Dark Current IcEo 400 nA Voce = 40 V, Ir =0 Current Transfer Ratio CTR 200 | 2000 % IF =+1 mA, Vcr =2V CTR Ratio 2) ICTRVCTRe| 0.3 1.0 3.0 lr =+1 mA, Vor =2V Collector Saturation Voltage Vcctsat) 1.0 v lF =+1 mA, Ic = 2mA Coupled Isolation Resistance Ri-2 10" a Vin-out = 1.0 kVoc Isolation Capacitance C12 0.4 pF V=0,f=1.0 MHz Rise Time *3) tr 200 us Voo =5 V, lo=2 mA, Ri = 1002 Fall Time *3) ti 200 ws | Vec=5V,lco=2mA, Ri= 1009 *2) CTRt1 = lot/lr1, CTR2 = lca/lr2 *3) Test Circuit for Switching Time le lor PULSE INPUT =, 0 Voc Duty cycle = 1/10 of ce Ire > {a be (oN as iq)NEC TYPICAL CHARACTERISTICS (Ta = 25 C) ceo Collector to Emitter Dark Current nA DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 = E | 5 75 ~ @ UN 2 a ~ 30 3 N o o o NN 3B 25 ~~ & | a o 0 25 50 75 100 Ta Ambient Temperature C FORWARD CURRENT vs. FORWARD VOLTAGE 100 Ta = 100 < 75 50 F 40 E 2 3 s 1 @ 2 L ; 0.1 0.01 0.6 0.8 1 1.2 1.4 1.6 Vr Forward Voltage V COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 50 000 Vce = 40 V 10 000 4 1000 100 10 1 -60 -40 -20 0 20 40 60 380 100 Ta Ambient Temperature C lr Forward Current mA Pc Transistor Power Dissipation mW lc Collector Current mA PS2706-1, PS2706-2, PS2706-4 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 150 PS2706-1 1.5 mWiec 100 IS Ps2706-2 NN PS2706-4 mA <0 1.2mWw/ec ww 0 25 50 73 100 Ta Ambient Temperature C FORWARD CURRENT vs. FORWARD VOLTAGE 80 60 40 20 -60 -80 -16 -12 08 04 0 04 08 12 16 Vr Forward Voltage V COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 300 40 0 00 gmA= 1 mA 0.6mA 0.2mA lF=0.1 mA 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 Vcetsan Collector Saturation Voltage VNEC CTR Current Transfer Ratio % Ic Collector Current mA 9 000 8 000 000 6 000 5 000 4000 3 000 2 000 1 000 Av Voltage Gain - dB 180 160 140 120 100 80 60 40 20 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 4 6 8 10 Vce Collector to Emitter Voltage V CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT 0.05 0.1 VceE=2V 1 10 50 l- Forward Current -mA FREQUENCY RESPONSE lIF=1mA Voce =2V 0 Te MN 5 hy -10 15 \ Ri= 1009 \ -20 h 02 a5 1 2 5 10 20 50 100 200 f Frequency kHz PS2706-1, PS2706-2, PS2706-4 NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE 12 49 Looe 5 Oo Yj, 3 og y; Rp oh 5 | oO 3B 06 WN t 5 04 2 . | Normalized to 1.0 ao O2 atTa = 25 C Q IF=1 mA, VceE=2V 0 65 -25 Q 25 50 75 100 Ta Ambient Temperature C SWITCHING TIME vs. LOAD RESISTANCE 1000 Voc = 5 V Ic=2mA $00 CTR =2 200 % a ao o t Switching Time ss => ao o o an NM 50 = 100 500 1k 5k Ri Load Resistance - Q SWITCHING TIME vs. LOAD RESISTANCE 5 000 Voc =5V lF=1mA 1 000 A= 25 C o CTR = 2 200 a I = = 100 m s a 10 I 1 05 100 500 1k 5k 10k 50 ki00 k Ri Load Resistance - QNEC PS2706-1, PS2706-2, PS2706-4 CTR Normalized CTR DEGRADATION 1.2 lF=1mA 10 = ae =25 C 08 (I Ta =60 C MN 06 0.4 0.2 Q 10 107 1d 104 105 108 Time Hr * The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.NEC PS2706-1, PS2706-2, PS2706-4 SOLDERING PRECAUTION (1) Infrared reflow soldering * Peak reflow temperature 235 C or below (Plastic surface temperature) Reflow time : 30 seconds or less (Time period during which the plastic surface tem- perature is 210 C) Number of reflow processes: Three * Flux > Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) INFRARED RAY REFLOW TEMPERATURE PROFILE (ACTUAL HEAT) to10s 235 C MAX 210 C to 30s 120 to 160C 60 to 90s (PRE-HEAT) PAGKAGE'S SURFACE TEMPERATURE (C) TIME (s) <NOTES> (1} Please avoid to be removed the residual flux by water after the first reflow processes. , po Peak Temperature 235 C or Lower [LJ] a7 = 77 (2} Dip soldering + Peak temperature : 260 C or lower * Time : 10 sor less * Flux : Rosin-base fluxNEC TAPING (Only PS2706-1) These conform to EIAJ Electronic Parts Taping Size (RC-1009B: Chip type). There are two types of taping according to the direction in which SOP photo couplers are stuck to the tape. PS2706-1-E3 O00 0 0 0 PS2706-1, PS2706-2, PS2706-4 PS2706-1-E4 O00 0 0 0 AA AA AA A 8 =: | = 9022 90/2 90/2 NEC NEC NEC OAIN OIN OAN 740 e740 0740 BH BH BH OE a a AB OUTLINE AND DIMENSIONS (:TAPE) SYMBOL RATINGS | Unit (mm) PO DO To A 462014 B 74404 Do 1.55404 Di 1.55 +04 E 1.75404 an F 5520.4 PY ato PO 4i04 T1 the P2 2+0.4 TO 24204 TI 0.3 W 12402 OUTLINE AND DIMENSIONS (:REEL) NGS Unit (mm) nit {mm SYMBOL Es, E4 | Fs, F4 A 178 330 B 66 c 13405 D 21408 E 20205 F 15205 Vv Bi Ww 12.4729 -0 wi 15404 Wwe 18.4 MAX. of 120 62 60 PACKING: 900 pieces/reel .......... E3, E4 3 500 pieces/reel ...... F3, FNEC PS2706-1, PS2706-2, PS2706-4 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) PARAMETER SYMBOL SPECK UNIT Application classification (DIN VDE 0109) for rated line voltages < 300 Ver IV for rated line voltages < 600 Ver Wl Climatic test class (DIN 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage. Uiorm 710 Vpeak Test voltage (partial discharge, test procedure a for type test and random Upr 850 Vpeak test) Upr = 1.2 x Uiorm, Pd < 5 pC Test voltage (partial discharge, test procedure b for random test) Upr 1140 Vpeak Upr = 1.6 x Uierm, Pd < 5 pC Highest permissible overvoltage Utr 6 00 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance 25 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175 Material group (DIN VDE 0109) Illa Storage temperature range Tstg 55 to +150 Cel Operating temperature range Tam 55 to +100 Cel Isolation resistance, minimum value Uio = 500 V de at 25 Cel Ris min 107? ohm Uio = 500 V dc at Tamp maximum at least 100 Cel Ris min 10" ohm Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Tsi 150 Cel Current (input current IF, Psi = 0} Isi 200 mA Power (output or total power dissipation) Psi 300 mw Isolation resistance Uio = 500 V de at 175 Cel (Tsi) Ris min 10 ohmNEC PS2706-1, PS2706-2, PS2706-4 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Galium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied cr reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied cr otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation er others. While NEC Corporation has been making continucus effort to enhance the reliability of tts semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radicactive design is not implemented in this product. M4 94.11