QSE773 — Sidelooker Pin Photodiode
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.0.2
August 2013
QSE773
Sidelooker Pin Photodiode
Features
■
Daylight filter
■
Sidelooker package
■
Pin photodiode
■
Wide reception angle, 120°
■
Chip size = 0.107 sq. inches (2.71 sq. mm)
Description
The QSE773 is a plastic silicon pin photodiode in a
sidelooker package.
Package Dimensions
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
Schematic
0.215 (5.46)
0.199 (5.06)
0.311 (7.90)
0.288 (7.30)
0.100 (2.54)
0.060 (1.52)
0.610 (15.49)
MIN
0.126 (3.20)
0.110 (2.80)
0.020 (0.51)
SQ. (2x)
0.116 (2.95)
0.100 (2.54)
C
L
SENSING
SURFACE
ANODE
ANODE
CATHODE
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.0.2 2
QSE773 — Sidelooker Pin Photodiode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
3. Derate power dissipation linearly 2.50mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or Isopropyl alcohols are recommended as cleaning agents.
6. Soldering iron tip 1/16” (1.6 mm) from housing.
7. As long as leads are not under any stress or spring tension.
Electrical Characteristics
(T
A
= 25°C)
Notes:
8. Light source is an GaAs LED which has a peak emission wavelength of 940nm.
9. All measurements made under pulse conditions.
Symbol Parameters Value Units
T
OPR
Operating Temperature -40 to +85 °C
T
STG
Storage Temperature -40 to +85 °C
T
SOL-I
Soldering Temperature (Iron)
(4)(5)(6)(7)
240 for 5 sec. °C
T
SOL-F
Soldering Temperature (Flow)
(4)(5)(7)
260 for 10 sec °C
V
R
Reverse Voltage 32 V
P
D
Power Dissipation
(3)
150 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
R
Reverse Voltage I
R
= 0.1mA, 32 V
I
R(D)
Dark Reverse Current V
R
= 10 V, 30 nA
λ
PK
Peak Sensitivity V
R
= 5V 940 nm
Θ
Reception Angle at 1/2 Power ±60 °
I
PH
Photo Current
(8)
E
e
= 1.0mW/cm
2
V
R
= 5V 30 µA
I
SC
Short Circuit Current
(8)
E
e
= 1.0mW/cm
2
18 µA
C Capacitance V
R
= 3V 25 pF
t
r
Rise Time V
R
= 5V, R
L
= 1k
Ω
50 ns
t
f
Fall Time V
R
= 5V, R
L
= 1k
Ω
50 ns
E2
e = 0mW/cmE 2
e = 0mW/cmE 2
,
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.0.2 3
QSE773 — Sidelooker Pin Photodiode
Typical Performance Curves
IR - DARK CURRENT (nA)
IR - DARK CURRENT (pA)
VR - REVERSE VOLTAGE (V)
VR - REVERSE VOLTAGE (V)
CAP ACITANCE (pF)
100
80
60
40
20
0
0.01 0.1 1 10 100
f = 1MHz
E = 0
1000
100
10
10102030405060708090100
VR
= 10V
E = 0
1200
1000
800
600
400
200
0
02468101214161820
E = 0
1.0
0.8
0.6
0.4
0.2
0
700 800 900 1000 1100
λ- WAVELENGTH (nm)
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
120
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Ee - IRRADIANCE (mW/cm2)
Fig.
Fig. 3 Short Circuit Current vs. Temperature
Fig. 5 Dark Current vs. Temperature Fig. 6 Dark Current vs. Reverse Voltage
Fig. 4 Capacitance vs. Reverse Voltage
2 Short Circuit Current vs. Irradiance
ISC - SHORT CIRCUIR CURRENT (µA)
ISC - SHORT CIRCUIR CURRENT (µA)
Wavelength = 940nm
TA = 25˚C
S (λ)rel - RELATIVE SPECTRAL SENSITIVITY
-20 -10 0 10 20 30 40 50 60 70
0
5
10
15
20
25
30
TA - TEMPERATURE (°C)
TA - TEMPERATURE (°C)
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.0.2 4
QSE773 — Sidelooker Pin Photodiode
