MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IC25 = 135 A VCES = 1200 V VCE(sat) typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW VGES VGEM 1 7 6 3 2 1 4 5 6 7 3 2 2 E 72873 Maximum Ratings 1200 1200 V V Continuous Transient 20 30 V V IC25 IC80 ICM TC = 25C TC = 80C TC = 80C, tp = 1 ms 135 90 180 A A A tSC (SCSOA) VGE = 15 V, VCE = VCES, TJ = 125C RG = 15 W, non repetitive 10 ms RBSOA VGE = 15 V, TJ = 125C, RG = 15 W Clamped inductive load, L = 100 mH ICM = 150 VCEK < VCES A Ptot TC = 25C 560 W 150 C -40 ... +150 C 4000 4800 V~ V~ Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 TJ Tstg VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Insulating material: Al2O3 Advantages Typical Applications Md Mounting torque (module) (teminals) 2.25-2.75 20-25 2.5-3.7 22-33 Nm lb.in. Nm lb.in. dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 12.7 9.6 50 mm mm m/s2 Weight Typical 130 4.6 g oz. space and weight savings reduced protection circuits AC and DC motor control AC servo and robot drives power supplies welding inverters 030 Data according to a single IGBT/FRED unless otherwise stated. (c) 2000 IXYS All rights reserved 1-4 MII 100-12 A3 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 3 mA, VCE = VGE ICES VCE = VCES IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 75 A, VGE = 15 V Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 Dimensions in mm (1 mm = 0.0394") V 4.5 TJ = 25C TJ = 125C MID 100-12 A3 MDI 100-12 A3 6.5 7.5 V 5 mA mA 300 nA 2.2 VCE = 25 V, VGE = 0 V, f = 1 MHz Inductive load, TJ = 125C IC = 75 A, VGE = 15 V VCE = 600 V, RG = 15 W with heatsink compound 2.7 V 5.5 0.75 0.33 nF nF nF 100 50 650 50 12.1 10.5 ns ns ns ns mJ mJ 0.44 0.22 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VF IF = 75 A, VGE = 0 V, IF = 75 A, VGE = 0 V, TJ = 125C IF TC = 25C TC = 80C IRM trr IF = 75 A, VGE = 0 V, -diF/dt = 600 A/ms TJ = 125C, VR = 600 V RthJC RthJS with heatsink compound 2.2 1.7 2.5 1.8 V V 150 95 A A 62 200 A ns 0.9 0.45 K/W K/W Conduction IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.5 V; R0 = 13.6 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 6.5 mW Thermal Response IGBT (typ.) Cth1 = 0.20 J/K; Rth1 = 0.218 K/W Cth2 = 0.47 J/K; Rth2 = 0.005 K/W Free Wheeling Diode (typ.) Cth1 = 0.14 J/K; Rth1 = 0.443 K/W Cth2 = 0.26 J/K; Rth2 = 0.009 K/W (c) 2000 IXYS All rights reserved 2-4 MII 100-12 A3 175 175 VGE=17V 15V TJ = 25C A 150 13V IC 125 MID 100-12 A3 MDI 100-12 A3 VGE=17V 15V TJ = 125C A 150 13V IC 125 11V 100 100 75 75 50 11V 9V 50 9V 25 25 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 300 A 250 VCE = 20V IC 3.5 V Fig. 2 Typ. output characteristics 150 TJ = 25C 125 A 2.5 3.0 VCE IF 100 TJ = 125C TJ = 25C 200 75 150 50 100 25 50 0 0 5 6 7 8 9 10 0 11 V 1 2 3 4 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 20 V VCE = 600V IC = 75A A ns trr trr IRM VGE 15 200 80 10 TJ = 125C VR = 600V IF = 75A 40 IRM 5 100 100-12 0 0 0 100 200 300 400 QG Fig. 5 Typ. turn on gate charge (c) 2000 IXYS All rights reserved nC 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MII 100-12 A3 40 mJ Eon Eon 30 RG = 15W TJ = 125C 0 50 100 mJ ns td(off) 10 400 VCE = 600V VGE = 15V 40 5 0 0 RG = 15W 200 TJ = 125C tf 0 150 A 50 100 25 td(on) VCE = 600V VGE = 15V IC = 75A TJ = 125C Eon Eon tr 10 5 0 8 Fig. 8 Typ. turn off energy and switching times versus collector current ns 25 mJ 160 20 200 t 15 0 16 24 32 40 0 150 A IC Fig. 7 Typ. turn on energy and switching times versus collector current mJ 600 t IC 20 800 Eoff Eoff 15 80 VCE = 600V VGE = 15V 0 ns t tr 10 20 120 td(on) 20 160 MID 100-12 A3 MDI 100-12 A3 48 W 2000 VCE = 600V VGE = 15V IC = 75A TJ = 125C Eoff ns td(off) 1600 t 120 15 80 10 800 40 5 400 tf 0 0 56 1200 Eoff 0 8 16 24 RG 32 40 48 0 W 56 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 200 1 A K/W 0.1 160 ICM ZthJC 120 diode 0.01 RG = 15W TJ = 125C VCEK < VCES 80 0.001 40 0.0001 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA (c) 2000 IXYS All rights reserved IGBT single pulse 0.00001 0.00001 0.0001 100-12 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4