BD139
TO-126 NPN Transistors
Page <1> 28/06/10 V1.1
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TO126
Plastic Package
1. Emitter
2. Collector
3. Base
Dimensions Minimum Maximum
A7. 2 8.38
B 10.16 11.43
C 2.29 3.04
D 0.64 0.88
E 2.040 2.285
F 0.39 0.63
G 4.07 5.08
L 15.00 16.63
M 0.89 1.65
N 3.31 4.44
P 2.54 3.30
S - 2.54
Dimensions : Millimetres
NPN Epitaxial Silicon Power Transistors
BD139
TO-126 NPN Transistors
Page <2> 28/06/10 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Absolute Maximum Ratings
Description Symbol BD139 Unit
Collector-emitter voltage VCEO 80
V
Collector-emitter voltage (RBE = 1kΩ) VCER 100
Collector-base voltage VCBO
Emitter base voltage VEBO 5.0
Collector current IC1.5
ACollector peak current ICM 2.0
Base current IB0.5
Power dissipation at Ta= 25°C
Derate above 25°C PD1.25
10 W
mW/ºC
Power dissipation at Tc= 25°C
Derate above 25°C PD12.5
100 W
mW/ºC
Power dissipation at Tc = 70ºC PD8.0 W
Operating and storage junction
Temperature range Tj, Tstg -55 to +150 °C
*Pulse test: -Pulse width=300ms, duty cycle = 2%.
Electrical characteristics (Tc= 25°C unless specified otherwise)
Thermal Characteristics
Description Symbol Test Condition Minimum Maximum Unit
Collector emitter sustaining voltage *VCEO (sus) IC= 30mA, IB= 0
BD139 80 V
Collector cut off current ICBO
VCB = 30V, IE= 0 0.1
µA
VCB = 30V, IE= 0,
Tc= 125ºC 10
Emitter cut off current IEBO VEB = 5V, IC = 0
DC current gain *hFE
IC = 0.005A, VCE = 2V
IC= 0.15A, VCE = 2V
IC= 0.5A, VCE = 2V
25
40
25 250 -
Junction to ambient in free air Rth (j-a) 100 ºC/W
Junction to case Rth (j-c) 10 ºC/W
BD139
TO-126 NPN Transistors
Page <3> 28/06/10 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Part Number Table
Description Part Number
NPN Epitaxial Silicon Power Transistors BD139-10
Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or ar e licensed to it. No licence is granted for the use of it other than for information purposes
in connection with the products to which it relates. No licence of any intellectual pr operty rights is granted. The Information is subject to change without notice and r eplaces all data sheets previously supplied.
The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data
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resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded.
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Electrical Characteristics (Tc= 25°C unless specified otherwise)
Description Symbol Test Condition Minimum Maximum Unit
DC Current Gain
*hFE Group IC= 0.15A, VCE = 2V
- 6
- 10
- 16
- 25
40
63
100
160
100
160
250
400
-
Collector emitter saturation voltage *VCE (sat) IC= 0.5A, IB= 0.05A - 0.5 V
Base emitter on voltage *VBE (on) *IC= 0.5A, VCE = 2V - 1.0
