STP5NK65ZFP N-channel 650 V, 1.5 , 4.5 A TO-220FP Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS(on) max ID Pw STP5NK65ZFP 650 V < 1.8 4.5 A 25 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Improved ESD capability 3 1 2 TO-220FP Applications Figure 1. Switching application Internal schematic diagram Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products Table 1. Device summary Order codes Marking Package Packaging STP5NK65ZFP P5NK65ZFP TO-220FP Tube April 2009 Doc ID 15565 Rev 1 1/12 www.st.com 12 Electrical ratings 1 STP5NK65ZFP Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 650 V VGS Gate- source voltage 30 V (1) A ID Drain current (continuous) at TC = 25 C 4.5 ID Drain current (continuous) at TC = 100 C 3.1 (1) A (1) A IDM (2) PTOT VESD(G-S) dv/dt (3) Drain current (pulsed) 18 Total dissipation at TC = 25 C 25 W Derating factor 0.6 W/C 2000 V 4.5 V/ns 2500 V -55 to 150 V Value Unit 5 V Gate source ESD (HBM-C=100 pF, R=1.5 k) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Tj Tstg Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 5.7 A, di/dt 200 A/s, VDD =80% V(BR)DSS. Table 3. Symbol Parameter Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max 62.5 V Tl Maximum lead temperature for soldering purpose 300 A Table 4. 2/12 Absolute maximum ratings Absolute maximum ratings Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 4.2 A EAS Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) 170 mJ Doc ID 15565 Rev 1 STP5NK65ZFP 2 Electrical characteristics Electrical characteristics (Tcase =25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Qg Qgs Qgd On/off states Parameter Test conditions Min. Typ. Max. Unit 650 - - V VDS=max rating VDS=max rating @125 C - - 1 50 A A VGS = 20 V - - 10 A VDS = VGS, ID = 50 A 3 3.75 4.5 V VGS = 10 V, ID = 2.1 A - 1.5 1.8 Min. Typ. Max. Unit Forward transconductance VDS =10 V, ID = 2.1 A - 5 - S Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1MHz, VGS = 0 - 680 80 17 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 98 - pF Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 4.5 A, VGS = 10 V Figure 16 25 4.4 13.7 35 - nC nC nC Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance ID =1 mA, VGS = 0 Dynamic Parameter Test conditions 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7. Symbol Switching times Parameter Test conditions Min. Typ. td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 325 V, ID = 2.1 A, RG = 4.7 , VGS = 10 V Figure 15 - 20 15 140 40 tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 325 V, ID = 2.1 A, RG = 4.7 , VGS = 10 V Figure 15 - 12 7 15 Doc ID 15565 Rev 1 Max. Unit - ns ns ns ns - ns ns ns 3/12 Electrical characteristics Table 8. Symbol STP5NK65ZFP Source Drain Diode Parameter Test conditions Min. Typ. Max. Unit - - 4.5 18 A A ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward On voltage ISD = 4.5 A, VGS = 0 - - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5 A, di/dt = 100 A/s VDD = 100 V, Tj = 150 C Figure 20 - 375 1.76 10 - ns nC A Min. Typ. Max. Unit 30 - - V ISD trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. Table 9. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs= 1mA (open drain) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 4/12 Doc ID 15565 Rev 1 STP5NK65ZFP Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM03326v1 ID (A) 10 ) 10s 100s D S( on O Li per m at ite io d ni by n m this ax a R rea is 1s 1 1ms Tj=150C Tc=25C 0.1 10ms Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain source on resistance Doc ID 15565 Rev 1 5/12 Electrical characteristics Figure 8. STP5NK65ZFP Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Avalanche energy vs starting Tj AM03327v1 EAS (mJ) ID=4.2 A VDD=50 V 170 150 130 110 90 70 50 30 10 0 6/12 Doc ID 15565 Rev 1 20 40 60 80 100 120 140 TJ(C) STP5NK65ZFP Electrical characteristics Figure 14. Normalized BVDSS vs temperature Doc ID 15565 Rev 1 7/12 Test circuits 3 STP5NK65ZFP Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 15565 Rev 1 10% AM01473v1 STP5NK65ZFP 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15565 Rev 1 9/12 Package mechanical data STP5NK65ZFP TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 10/12 Doc ID 15565 Rev 1 STP5NK65ZFP 5 Revision history Revision history Table 10. Document revision history Date Revision 16-Apr-2009 1 Changes First issue Doc ID 15565 Rev 1 11/12 STP5NK65ZFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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