April 2009 Doc ID 15565 Rev 1 1/12
12
STP5NK65ZFP
N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP
Zener-protected SuperMESH™ Power MOSFET
Features
■100% avalanche tested
■Extremely high dv/dt capability
■Gate charge minimized
■Very low intrinsic capacitances
■Very good manufacturing repeatability
■Improved ESD capability
Applications
■Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products
Figure 1. Internal schematic diagram
Type VDSS
RDS(on)
max IDPw
STP5NK65ZFP 650 V < 1.8 Ω4.5 A 25 W
12
3
TO-220FP
Table 1. Device summary
Order codes Marking Package Packaging
STP5NK65ZFP P5NK65ZFP TO-220FP Tube
www.st.com
Electrical ratings STP5NK65ZFP
2/12 Doc ID 15565 Rev 1
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 650 V
VGS Gate- source voltage ± 30 V
IDDrain current (continuous) at TC = 25 °C 4.5 (1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC = 100 °C 3.1 (1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 18 (1) A
PTOT Total dissipation at TC = 25 °C 25 W
Derating factor 0.6 W/°C
VESD(G-S)
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ) 2000 V
dv/dt (3)
3. ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS.
Peak diode recovery voltage slope 4.5 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500 V
Tj
Tstg
Operating junction temperature
Storage temperature -55 to 150 V
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case Max 5 V
Rthj-amb Thermal resistance junction-ambient Max 62.5 V
Tl
Maximum lead temperature for soldering
purpose 300 A
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 4.2 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 170 mJ
STP5NK65ZFP Electrical characteristics
Doc ID 15565 Rev 1 3/12
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID =1 mA, VGS = 0 650 - - V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS=max rating
VDS=max rating @125 °C --1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V - - ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 2.1 A - 1.5 1.8 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward transconductance VDS =10 V, ID= 2.1 A - 5 - S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1MHz,
VGS = 0 -
680
80
17
-
pF
pF
pF
Coss eq. (2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Equivalent output
capacitance VGS = 0, VDS = 0 to 480 V - 98 - pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 4.5 A,
VGS = 10 V
Figure 16
-
25
4.4
13.7
35 nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 325 V, ID = 2.1 A,
RG = 4.7 Ω, VGS = 10 V
Figure 15
-
20
15
140
40
-
ns
ns
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 325 V, ID = 2.1 A,
RG=4.7 Ω, VGS = 10 V
Figure 15
-
12
7
15
-
ns
ns
ns
Electrical characteristics STP5NK65ZFP
4/12 Doc ID 15565 Rev 1
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 8. Source Drain Diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
--
4.5
18
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward On voltage ISD = 4.5 A, VGS = 0 - - 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
Figure 20
-
375
1.76
10
-
ns
nC
A
Table 9. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO
Gate-source breakdown
voltage Igs=± 1mA (open drain) 30 - - V
STP5NK65ZFP Electrical characteristics
Doc ID 15565 Rev 1 5/12
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain source on resistance
ID
10
1
0.1
0.01
0.1 1100 VDS
(
V
)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
1µs
Tj=150°C
Tc=25°C
Sinlge
pulse
AM03326v1
Electrical characteristics STP5NK65ZFP
6/12 Doc ID 15565 Rev 1
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Avalanche energy vs starting Tj
E
AS
040 T
J
(°C)
(mJ)
20 100
60 80
10
30
50
120 140
70
90
110
130
150
170
I
D
=4.2 A
V
DD
=50 V
AM03327v1
STP5NK65ZFP Electrical characteristics
Doc ID 15565 Rev 1 7/12
Figure 14. Normalized BVDSS vs temperature
Test circuits STP5NK65ZFP
8/12 Doc ID 15565 Rev 1
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STP5NK65ZFP Package mechanical data
Doc ID 15565 Rev 1 9/12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Package mechanical data STP5NK65ZFP
10/12 Doc ID 15565 Rev 1
Dim.
mm
.xaM.pyT.niM
6.44.4A
7.25.2B
57.25.2D
7.054.0E
157.0F
07.151.11F
5.151.12F
2.559.4G
7.24.21G
4.0101H
612L
6.036.823L
6.018.94L
6.39.25L
4.619.516L
3.997L
2.33aiD
7012510_Rev_J
AB
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
TO-220FP mechanical data
STP5NK65ZFP Revision history
Doc ID 15565 Rev 1 11/12
5 Revision history
Table 10. Document revision history
Date Revision Changes
16-Apr-2009 1 First issue
STP5NK65ZFP
12/12 Doc ID 15565 Rev 1
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