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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2015 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGH30S150P Rev. 1.1
March 2016
FGH30S150P — 1500 V, 30 A Shorted-anode IGBT
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Notes:
1: Limited by Tjmax
Symbol Description Ratings Unit
V
CES
Collector to Emitter Voltage 1500 V
V
GES
Gate to Emitter Voltage ±25 V
I
C
Collector Current @ T
C
= 25
o
C 60 A
Collector Current @ T
C
= 100
o
C 30 A
I
CM (1)
Pulsed Collector Current 90 A
I
F
Diode Continuous Forward Current @ T
C
= 25
o
C 60 A
I
F
Diode Continuous Forward Current @ T
C
= 100
o
C 30 A
P
D
Maximum Power Dissipation @ T
C
= 25
o
C 500 W
Maximum Power Dissipation @ T
C
= 100
o
C 250 W
T
J
Operating Junction Temperature -55 to +175
o
C
T
stg
Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300
o
C
Symbol Parameter Typ. Max. Unit
R
θJC
(IGBT) Thermal Resistance, Junction to Case, Max -- 0.3
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max -- 40
o
C/W
G
C
E
COLLECTOR
(FLANGE)
ECG
FGH30S150P
1500 V, 30 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: V
CE(sat)
= 1.85 V @ I
C
= 30 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
FGH30S150P — 1500 V, 30 A Shorted-anode IGBT
©2015 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FGH30S150P Rev. 1.1
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FGH30S150P FGH30S150P TO-247 - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage V
GE
= 0 V, I
C
= 1 mA 1500 - - V
∆BV
CES
∆T
J
Temperature Coefficient of Breakdown
Voltage V
GE
= 0 V, I
C
= 1 mA - 1.5 - V/
o
C
I
CES
Collector Cut-Off Current V
CE
= 1500, V
GE
= 0V - - 1 mA
I
GES
G-E Leakage Current V
GE
= V
GES
, V
CE
= 0V - - ±500 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage I
C
= 30mA, V
CE
= V
GE
4.5 6.0 7.5 V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 30A
,
V
GE
= 15V
T
C
= 25
o
C- 1.85 2.4 V
I
C
= 30A
,
V
GE
= 15V,
T
C
= 125
o
C- 2.06 - V
I
C
= 30A
,
V
GE
= 15V,
T
C
= 175
o
C- 2.15 -V
V
FM
Diode Forward Voltage I
F
= 30A
,
T
C
= 25
o
C - 1.61 2.2 V
I
F
= 30A
,
T
C
= 175
o
C - 1.96 - V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
- 3310 - pF
C
oes
Output Capacitance - 70 - pF
C
res
Reverse Transfer Capacitance - 55 - pF
Switching Characcteristics
t
d(on)
Turn-On Delay Time
V
CC
= 600V, I
C
= 30A,
R
G
= 10Ω, V
GE
= 15V,
Resistive Load, T
C
= 25
o
C
- 32 - ns
t
r
Rise Time - 292 - ns
t
d(off)
Turn-Off Delay Time - 492 - ns
t
f
Fall Time - 214 - ns
E
on
Turn-On Switching Loss - 1.16 - mJ
E
off
Turn-Off Switching Loss - 0.9 - mJ
E
ts
Total Switching Loss - 2.06 - mJ
t
d(on)
Turn-On Delay Time
V
CC
= 600V, I
C
= 30A,
R
G
= 10Ω, V
GE
= 15V,
Resistive Load, T
C
= 175
o
C
- 36 - ns
t
r
Rise Time - 336 - ns
t
d(off)
Turn-Off Delay Time - 560 - ns
t
f
Fall Time - 520 - ns
E
on
Turn-On Switching Loss - 1.39 - mJ
E
off
Turn-Off Switching Loss - 1.86 - mJ
E
ts
Total Switching Loss - 3.25 - mJ
Q
g
Total Gate Charge
V
CE
= 600V, I
C
= 30A,
V
GE
= 15V
- 369 - nC
Q
ge
Gate to Emitter Charge - 23.5 - nC
Q
gc
Gate to Collector Charge - 199 - nC
FGH30S150P — 1500 V, 30 A Shorted-anode IGBT
©2015 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
FGH30S150P Rev. 1.1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteritics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
02468
0
40
80
120
160
200
9V
8V
7V
20V
T
C
= 175
o
C
15V
12V
10V
17V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
2 4 6 8
0
40
80
120
160
200
7V
VGE = 17V
10V
8V
20V
TC = 25oC
15V
12V
9V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0 3 6 9 12 15 18
0
40
80
120
160
200
Common Emitter
V
CE
= 20V
T
C
= 25
o
C
T
C
= 175
o
C
Collector Current, I
C
[A]
Gate-Emitter Voltage,V
GE
[V]
02468
0
40
80
120
160
200
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 175
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
25 50 75 100 125 150 175
1
2
3
4
60A
30A
I
C
= 15A
Common Emitter
V
GE
= 15V
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Case Temperature, T
C
[
o
C]
4 8 12 16 20
0
4
8
12
16
20
I
C
= 15A
30A
60A
Common Emitter
T
C
= 25
o
C
Collector-Emitter Voltage
,
V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
FGH30S150P — 1500 V, 30 A Shorted-anode IGBT
©2015 Fairchild Semiconductor Corporation
4
www.fairchildsemi.com
FGH30S150P Rev. 1.1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE
Figure 8. Capacitance Characteristics
Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn-On Characteristics vs Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
I
C
= 15A
30A
60A
Common Emitter
T
C
= 175
o
C
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
5 10 15 20 25 30
10
100
1000
10000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
C
res
C
oes
C
ies
Capacitance [pF]
Collector-Emitter Voltage, V
CE
[V]
0 80 160 240 320 400
0
3
6
9
12
15
Common Emitter
T
C
= 25
o
C
600V
400V
V
CC
= 200V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
1 10 100 1000 3000
0.01
0.1
1
10
100
1ms
10 ms
DC
*Notes:
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
50
µ
µµ
µ
s
100
µ
µµ
µ
s
Collector Current, I
c
[A]
Collector-Emitter Voltage, V
CE
[V]
200
10 20 30 40 50 60 70
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 30A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(on)
t
r
Switching Time [ns]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
10 20 30 40 50 60 70
100
1000
10000
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 30A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Switching Time [ns]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
FGH30S150P — 1500 V, 30 A Shorted-anode IGBT
©2015 Fairchild Semiconductor Corporation
5
www.fairchildsemi.com
FGH30S150P Rev. 1.1
Typical Performance Characteristics
Figure 13. Turn-on Characteristics VS. Figure 14.Turn-off Characteristics VS.
Collector Current Collector Current
Figure 15. Switching Loss VS. Gate Resistance Figure 16. Switching Loss VS. Collector Current
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
10 20 30 40 50 60
10
100
1000
4000
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C t
r
t
d(on)
Switching Time [ns]
Collector Current, I
C
[A]
10 20 30 40 50 60
50
100
1000
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Switching Time [ns]
Collector Current, I
C
[A]
10 20 30 40 50 60
1
10
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 30A
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
0.5
10 20 30 40 50 60
0.05
1
5
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Collector Current, I
C
[A]
1 10 100 1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 175
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0 1 2 3
1
10
60
T
J
= 25
o
C
T
C
= 25
o
C
T
C
= 175
o
C
T
J
= 175
o
C
Forward Voltage, V
F
[V]
Forward Current, I
F
[A]
0.5
FGH30S150P — 1500 V, 30 A Shorted-anode IGBT
©2015 Fairchild Semiconductor Corporation
6
www.fairchildsemi.com
FGH30S150P Rev. 1.1
Figure 19.
..
. Transient Thermal Impedance of IGBT
1E-5 1E-4 1E-3 0.01 0.1 1 10
7E-3
0.01
0.1
0.4
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
15.87
15.37
E
20.82
20.32
E
3.93
3.69
E
16.25
15.75
E
1.60
5.56
11.12
5.20
4.96
1.35
1.17
5.58
5.34
E
4.13
3.53
2.77
2.43
1.87
1.53
(2X)
0.254
M
B A
M
0.254
M
B A
M
A
4.82
4.58
E
0.71
0.51
2.66
2.29
B
12.81
E
3.65
3.51
E
6.85
6.61
13.08 MIN
1.35
0.51
1
3
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E
DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247A03_REV04
1 32
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1
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