NVMFS4C03N Power MOSFET 30 V, 1.7 mW, 159 A, Single N-Channel Logic Level, SO-8FL Features * * * * * * www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 1.7 mW @ 10 V 30 V 159 A 2.4 mW @ 4.5 V D (5,6) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS "20 V Parameter Continuous Drain Current RqJC (Notes 1, 2, 3) TC = 25C TC = 25C A PD 77 MARKING DIAGRAM W D TA = 25C ID 34.9 A Steady State Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current 159 S (1,2,3) N-CHANNEL MOSFET Steady State Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) ID G (4) TA = 25C PD 3.71 W TA = 25C, tp = 10 ms IDM 900 A TJ, Tstg -55 to 175 C Operating Junction and Storage Temperature Source Current (Body Diode) IS 64 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 11 A) EAS 549 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 Symbol Value Unit Junction-to-Case - Steady State (Note 2) RqJC 1.95 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 40 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. April, 2016 - Rev. 2 D D 4C03N = Specific Device Code for NVMFS4C03N 4C03WF= Specific Device Code of NVMFS4C03NWF A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty Package Shipping NVMFS4C03NT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NVMFS4C03NT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel NVMFS4C03NWFT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NVMFS4C03NWFT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel Device THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) (c) Semiconductor Components Industries, LLC, 2016 D 4C03xx AYWZZ ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Parameter S S S G 1 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NVMFS4C03N/D NVMFS4C03N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 18.2 VGS = 0 V, VDS = 24 V mV/C TJ = 25 C 1 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ RDS(on) 1.3 2.2 4.8 V mV/C VGS = 10 V ID = 30 A 1.4 1.7 VGS = 4.5 V ID = 30 A 2.0 2.4 mW Forward Transconductance gFS VDS = 3 V, ID = 30 A 136 S Gate Resistance RG TA = 25 C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 67 Total Gate Charge QG(TOT) 20.8 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge 3071 VGS = 0 V, f = 1 MHz, VDS = 15 V 1673 pF 4.9 VGS = 4.5 V, VDS = 15 V; ID = 30 A nC 8.5 4.7 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 45.2 nC SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 14 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 32 ns 27 17 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.75 TJ = 125C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 47 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 23 ns 24 39 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS4C03N TYPICAL CHARACTERISTICS 250 250 4.5 V TJ = 25C 3.8 V 200 3.6 V 3.4 V 175 VGS = 10 V 150 3.2 V 125 100 3.0 V 75 50 2.8 V 25 2.6 V 200 175 150 125 100 75 TJ = 25C TJ = -55C 25 0 0.5 1.0 1.5 2.0 2.5 1.5 3.0 3 3.5 4 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 30 A 2.9 TJ = 25C 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance vs. VGS 4.5 3.1 TJ = 25C 2.9 2.7 2.5 2.3 VGS = 4.5 V 2.1 1.9 1.7 1.5 VGS = 10 V 1.3 0 25 50 75 100 125 150 175 200 225 250 ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.8 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 1.6 2.5 VGS, GATE-TO-SOURCE VOLTAGE (V) 3.1 3 2 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 0.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) TJ = 150C 50 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VDS = 3 V 225 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 225 1.4 1.2 1.0 TJ = 125C 1000 TJ = 100C TJ = 85C 100 0.8 0.6 -50 -25 10 0 25 50 75 100 125 150 175 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 30 NVMFS4C03N VGS, GATE-TO-SOURCE VOLTAGE (V) 10000 C, CAPACITANCE (pF) Ciss Coss 1000 100 Crss VGS = 0 V TJ = 25C f = 1 MHz 10 0.1 1 10 12 QT 10 15 9 8 VDS 7 12 VGS 6 9 5 4 Qgs Qgd 6 3 TJ = 25C VDS = 15 V ID = 30 A 2 1 0 100 0 5 10 15 20 25 30 35 40 45 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 3 0 50 1000 1000 VGS = 0 V IS, SOURCE CURRENT (A) VDD = 15 V ID = 15 A VGS = 4.5 V td(off) tf 100 tr td(on) 100 TJ = 150C 10 TJ = 25C 1 TJ = -55C 0.1 10 0.1 1 10 0.3 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 18 11 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 100 10 ms 10 ms 10 1 0.1 VGS 10 V TC = 25C 100 ms RDS(on) Limit Thermal Limit Package Limit 1 ms 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NVMFS4C03N TYPICAL CHARACTERISTICS R(t) (C/W) 100 RqJA Steady State = 40C/W Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% PCB Cu Area = 650 mm2 PCB Cu Thk = 2 oz 0.1 0.01 Single Pulse 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 PULSE TIME (sec) Figure 12. Thermal Impedance (Junction-to-Ambient) 100 IPEAK, (A) 0.001 1E-06 TJ(initial) = 25C 10 TJ(initial) = 100C 1 1.00E-04 1.00E-03 TIME IN AVALANCHE (s) Figure 13. Avalanche Characteristics www.onsemi.com 5 1.00E-02 1E+01 1E+02 1E+03 NVMFS4C03N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.10 b C A B 0.05 c 0.495 8X 4.560 MILLIMETERS MIN NOM MAX 1.10 0.90 1.00 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 1.530 e/2 e L 1 4 3.200 K 4.530 E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 1 G 0.965 D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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